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    ELECTROSTATIC RELAY
    2.
    发明专利
    ELECTROSTATIC RELAY 未知

    公开(公告)号：CA2072199C

    公开(公告)日：1997-11-11

    申请号：CA2072199

    申请日：1992-06-23

    Applicant: PERINO DIDER ,  LEWINER JACQUES ,  MATSUSHITA ELECTRIC WORKS LTD

    Inventor： SAKAI JUN ,  AIZAWA KOICHI ,  NISHIMURA HIROMI ,  AWAI TAKAYOSHI ,  KASANO FUMIHIRO ,  KAKITE KEIJI

    IPC: H01H1/00 ,  H01H1/20 ,  H01H59/00

    Abstract: An electrostatic relay essentially comprises a fixed electrode with a fixed contact insulated therefrom, a movable electrode plate with a movable contact insulated therefrom, and a fixed pair of oppositely charged electrets. The movable electrode plate is pivotally supported to a pivot so as to have a cantilever fashion or a seesaw fashion, and also to move about the pivot axis relative to the fixed electrode between two rest positions of closing and opening the contacts. A control voltage source is connected across the fixed electrode and the movable electrode plate to generate a potential difference therebetween. The electrets are disposed adjacent the movable electrode plate to generate electrostatic forces of attracting and repelling the movable electrode plate, respectively when the movable electrode plate is charged to a given polarity. That is, the attracting and repelling forces are cooperative to produce a torque for moving the movable electrode plates in one direction from one of the rest positions to the other. The electrostatic relay is useful for precisely and rapidly operating of the relay.

    OPTICAL CONTROL CIRCUIT AND SEMICONDUCTOR DEVICE FOR REALIZING SAME
    3.
    发明专利
    OPTICAL CONTROL CIRCUIT AND SEMICONDUCTOR DEVICE FOR REALIZING SAME 未知

    公开(公告)号：GB2210199A

    公开(公告)日：1989-06-01

    申请号：GB8822067

    申请日：1988-09-20

    Applicant: AGENCY IND SCIENCE TECHN ,  MATSUSHITA ELECTRIC WORKS LTD

    Inventor： TOMONARI SHIGEAKI ,  KAKITE KEIZI ,  SAKAI JUN ,  HAYASHI YUTAKA

    IPC: H01L27/15 ,  H01L27/14 ,  H01L27/142 ,  H01L31/02 ,  H01L31/042 ,  H03K17/78

    Abstract: An optical control circuit is formed by a first transistor, a first resistive element connected between control electrode and first output electrode of the first transistor. The first output electrode forms an emitter or source of the transistor, a second resistive element is connected between the control electrode and second output electrode of the first transistor. The second output electrode forms a collector or drain of the transistor and an array of photovoltaic elements is connected in parallel to the second resistive element. A second transistor has a control electrode connected to the second output electrode of the first transistor. High speed operation of the second transistor can be assured, any noise voltage applied to the control electrode of the second transistor can be effectively bypassed, and the first transistor can be simultaneously formed in a substrate of the second transistor to be integralized therewith.

    MECHANICAL DEFORMATION AMOUNT SENSOR
    4.
    发明专利
    MECHANICAL DEFORMATION AMOUNT SENSOR 未知

    公开(公告)号：CA2430451A1

    公开(公告)日：2004-01-19

    申请号：CA2430451

    申请日：2003-05-29

    Applicant: MATSUSHITA ELECTRIC WORKS LTD

    Inventor： MIYAJIMA HISAKAZU ,  SAKAI JUN ,  ARAKAWA MASAO ,  YABUTA AKIRA

    IPC: B60J7/057 ,  B81B3/00 ,  B82B1/00 ,  G01L9/00 ,  G01P15/12 ,  H01L29/84 ,  G01B7/16

    Abstract: A mechanical deformation amount sensor includes a sensor structure which is formed by a semiconductor substrate or an insulating substrate. The sensor integrally includes a deformation portion deformable when a physical quantity to be detected is applied to the sensor structure. The sensor also includes a support portion for supporting the deformation portion, a carbon nanotube resistance element disposed on the deformation portion so as to be mechanically deformed in response to deformation of the deformation portion and a wiring pattern which is formed in a pattern on the sensor structure so as to be connected to the carbon nanotube resistance element. By applying a voltage to the carbon nanotube resistance element via the wiring pattern, a change of electrical conductivity of the carbon nanotube resistance element upon mechanical deformation of the carbon nanotube resistance element is transduced in an electrical signal.

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