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    POSITION CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY SYSTEM
    11.
    发明专利
    POSITION CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY SYSTEM 失效

    公开(公告)号：JPS5866330A

    公开(公告)日：1983-04-20

    申请号：JP16513381

    申请日：1981-10-15

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： SAWAKI TSUKASA

    IPC: H01J37/305 ,  H01J37/304 ,  H01L21/027

    Abstract: PURPOSE:To contrive the improvement of the position accuracy of a lithographic pattern by a method wherein marks are provided at the reflector body structure of a laser measuring system mounted on a movable pedestral and a lithographed substrate and the marks are detected by electron beams at fixed time intervals for measurement and a variation in position is fed back to a control system for correction. CONSTITUTION:The position of a mark A1 on the face perpendicular to the face of a reflecting mirror 19 and that of a mark B1 on a lithographed substrate 12 are measured by the sum of the integral value of the doppler shift of a laser beam caused by moving pedestral to position C and the conversion value of the position of a beam deflection voltage. The mark A1 is provided with variation amounts delta1, deltac, epsilon caused by an optical axis position and electrical factor for the reflecting surface of the mirror and the B1 is provided with variations deltac and epsilon, and delta2 for the reflecting surface of the mirror. Each variation amount of variation factors can not be separated in each measurement and a plurality of variation amounts during measurement is mostly controlled by an independent factor. Now, when the partition wall of the device is strictly controlled at about 1/100 deg.C to measure the variation amount between B1 and A1 and the substrate position is corrected for the A1 at fixed intervals of 10-30min, variation to the lithographic position is controlled by only the variation amount deltac+epsilon of an electron optics system and pattern position accuracy of 0.2mum or less is obtained.

    RESIN SEALED TYPE SEMICONDUCTOR DEVICE
    17.
    发明专利
    RESIN SEALED TYPE SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS5536975A

    公开(公告)日：1980-03-14

    申请号：JP11015278

    申请日：1978-09-06

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： TANAKA SHIGERU ,  SAWAKI TSUKASA ,  KOUTOU NORIO

    IPC: H01L23/50 ,  H01L23/28 ,  H01L23/48

    Abstract: PURPOSE:To improve adhesive connection between sealing resin and lead by provid ing curable phenol resin layer on resin sealing surface of a lead for taking out, of which one end is positioned adjacent to resin semiconductor element and other end is exposed outwardly. CONSTITUTION:The end of a lead 1 for taking out is faced to the near by both ends of a semiconductor element 2 to be sealed and the element 2 and the lead 1 are connected by fine metal wire 3. Then, the part exposed outwardly from the lead 1 is folded and molded as enveloping the part to be resin sealed, the element 2 and the wire 3 with the resin 4. At this time, a curable phenol resin layer 7 is disposed on the part which is buried in the resin 4 of the lead 1 and the part 6 which is to be left without sealing and positioned near to the outside. Then after, the part exposed outwardly is sealed with the resins 4 which consists of the novolak type phenolic resins and molding compounds including epoxy resins as hardener. Thus, penetration of the water is completly protected and dampproof is improved.

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