公开(公告)号：US3591838A

公开(公告)日：1971-07-06

申请号：US3591838D

申请日：1968-12-23

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： FUJIWARA SHOHEI ,  KANO GOTA ,  MATSUOKA SHUNSUKE ,  SAWAKI TSUKASA

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/24 ,  H01L21/28 ,  H01L21/283 ,  H04R1/10 ,  H04R5/033 ,  H01L3/00

CPC classification number: H01L21/28 ,  H01L21/00 ,  H01L21/24 ,  H01L21/283 ,  Y10S148/02

Abstract: In a semiconductor device a metal electrode film formed by an evaporated gold-chromium alloy containing 3 percent to 13 percent by weight of chromium can not only make low ohmic contact with the semiconductor substrate but can be connected to it mechanically firmly. The lead-tin eutectic alloy can be soldered satisfactorily to the metal electrode film without causing erosion even if the electrode film is dipped in a fused solder solution. The semiconductor device with such a gold-chromium alloy film has great industrial merit since the manufacturing steps, particularly the connection of external electrode lead wires, are greatly simplified.

公开(公告)号：DE1949647A1

公开(公告)日：1970-04-09

申请号：DE1949647

申请日：1969-10-01

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  FUJIWARA SHOHEI ,  HASEGAWA HIROMASA ,  IIZUKA MUTSUO ,  SAWAKI TSUKASA

IPC: A01D41/127 ,  H01L23/485 ,  H01L29/00 ,  H04R23/00 ,  H01L5/06

公开(公告)号：CA858744A

公开(公告)日：1970-12-15

申请号：CA858744D

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  IIZUKA MUTSUO ,  SAWAKI TSUKASA ,  FUJIWARA SHOHEI ,  HASEGAWA HIROMASA

公开(公告)号：CA849192A

公开(公告)日：1970-08-11

申请号：CA849192D

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  SAWAKI TSUKASA ,  FUJIWARA SHOHEI ,  MATSUOKA SHUNSUKE

公开(公告)号：CA859942A

公开(公告)日：1970-12-29

申请号：CA859942D

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  IIZUKA MUTSUO ,  FUJIWARA SHOHEI ,  SAWAKI TSUKASA ,  HASEGAWA HIROMASA

公开(公告)号：DE1816748A1

公开(公告)日：1969-07-24

申请号：DE1816748

申请日：1968-12-23

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： FUJIWARA SHOHEI ,  KANO GOTA ,  MATSUOKA SHUNSUKE ,  SAWAKI TSUKASA

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/24 ,  H01L21/28 ,  H01L21/283 ,  H04R1/10 ,  H04R5/033

Abstract: 1,258,580. Semi-conductor devices. MATSUSHITA ELECTRONICS CORP. 17 Dec., 1968 [28 Dec., 1967], No. 59963/68. Heading H1K. [Also in Division C7] An ohmic contact to a semi-conductor body is formed by a vapour deposited gold-chromium alloy film containing between 3 and 13% by weight of chromium uniformly distributed throughout the gold. The contact resistance may be reduced by addition of less than 1% by weight of antimony or gallium to the film according to whether the contacted area is of N or P type. The effect of the substrate temperature, film thickness and the amount of chromium in the film on the contact resistance of the electrode, the ease with which it can be soldered and etched and its adhesion to the semiconductor silicon and to silicon oxide films on the silicon over which it may also extend are discussed at length in the Specification. Films 2000-10,000 Š thick vacuum deposited at a residual gas pressure of less than 5 Î 10 -5 torrs from a single alloy source at a substrate temperature of 100-430‹ C. are preferred. In photo-lithographic processes to shape the electrode film conventional iodine and bromine systems may be used if the chromium content is less than 10%, otherwise aqua regia is used. The film may be dip coated with lead-tin or tin-silver alloy for soldering to lead wires or headers as in the diffused NPN transistor described.

公开(公告)号：CA875237A

公开(公告)日：1971-07-06

申请号：CA875237D

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  FUJIWARA SHOHEI ,  SAWAKI TSUKASA ,  HASEGAWA HIROMASA ,  IIZUKA MUTSUO

公开(公告)号：CA841846A

公开(公告)日：1970-05-12

申请号：CA841846D

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAEGASHI YUKI ,  SAWAKI TSUKASA ,  KANO GOTA ,  TAKAYANAGI SHIGETOSHI

公开(公告)号：DE1941911A1

公开(公告)日：1970-03-05

申请号：DE1941911

申请日：1969-08-18

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  IIZUKA MUTSUO ,  FUJIWARA SHOHEI ,  HASEGAWA HIROMASA ,  SAWAKI TSUKASA

IPC: H01L29/00 ,  H03F1/30 ,  H03F1/34 ,  H03F3/183 ,  H04R23/00 ,  H01L9/00

公开(公告)号：DE1941912A1

公开(公告)日：1970-02-26

申请号：DE1941912

申请日：1969-08-18

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  IIZUKA MUTSUI ,  FUJIWARA SHOHEI ,  HASEGAWA HIROMASA ,  SAWAKI TSUKASA

IPC: H01L23/485 ,  H01L29/00 ,  H01L5/06

Abstract: A semi-conductor device, such as diode transistor, field effect transistor with a Schottky barrier, has a separation space formed underneath the insulating film covering a major surface portion of the semiconductor substrate. This separation space is disposed adjacent to a metal layer accommodated in a recess in the substrate and extending through an opening in the insulating film, so as to eliminate unreasonable reverse leakage current, by effectively insulating the Schottky barrier from the electric charge accumulation layer beneath the insulating film.