公开(公告)号：WO2003021634A2

公开(公告)日：2003-03-13

申请号：PCT/US2002/025866

申请日：2002-08-14

Applicant: MOTOROLA, INC.

Inventor： NIU, Feng ,  CORNETT, Kenneth, D.

IPC: H01L

CPC classification number: H03H9/2405 ,  H03H9/02433 ,  H03H2009/02496

Abstract: Microelectromechanical resonators that can be fabricated on a semiconductor die by processes normally used in fabricating microelectronics (e.g., CMOS) circuits are provided. The resonators comprises at least two vibratable members that are closely spaced relative to a wavelength associated with their vibrating frequency, and driven to vibrate one-half a vibration period out of phase with each other, i.e. to mirror each others motion. Driving the vibratable members as stated leads to destructive interference effects that suppress leakage of acoustic energy from the vibratable members into the die, and improve the Q-factor of the resonator. Vibratable members in the form of vibratable plates that are formed by deep anisotropic etching one or more trenches in the die are disclosed. Embodiments in which two sets of vibratable plates are spaced by ½ the aforementioned wavelength to further suppress acoustic energy leakage, and improve the Q-factor of the resonator are disclosed.

Abstract translation: 提供可以通过在制造微电子学（例如，CMOS）电路中常用的工艺在半导体管芯上制造的微机电谐振器。 谐振器包括至少两个振动部件，其相对于与其振动频率相关的波长紧密间隔，并且被驱动以彼此异相地振动一半的振动周期，即彼此镜像运动。 如上所述地驱动可振动构件导致破坏性干涉效应，其抑制声能从振动构件泄漏到模具中，并且改善谐振器的Q因子。 公开了通过在模具中深度各向异性蚀刻一个或多个沟槽形成的可振动板形式的可振动构件。 其中两组可振动板间隔开的实施例; 上述波长进一步抑制了声能泄漏，并改善了谐振器的Q因子。

公开(公告)号：WO2003012874A3

公开(公告)日：2003-02-13

申请号：PCT/US2002/014739

申请日：2002-05-08

Applicant: MOTOROLA, INC.

Inventor： HIGGINS, Robert, J. ,  CORNETT, Kenneth, D.

IPC: H01L27/20

Abstract: An epitaxial layer of crystalline piezoelectric material such as lithium niobate and lithium tantalate can be grown overlying a silicon wafer by first growing an intermediate strain-relief layer on the silicon wafer. Early in the growth of the piezoelectric layer, the strain-relief layer is a crystalline metal oxide, which helps bridge the lattice mismatch between silicon and the piezoelectric material. After growth of a thin crystalline piezoelectric layer, the strain-relief layer is amorphized to decouple the silicon and piezoelectric crystal lattices. Growth of the piezoelectric layer may then be resumed to obtain a good quality thicker layer suitable for electro-acoustic device fabrication. Passive and active electro-acoustic devices may be fabricated using the epitaxial piezoelectric layer. In particular, acoustic charge transport devices that utilize device elements in both silicon and the piezoelectric epitaxial overlayer are designed and fabricated. The electro-acoustic devices may be integrated with semiconductor device circuitry fabricated on the silicon wafer.

公开(公告)号：WO1995027329A1

公开(公告)日：1995-10-12

申请号：PCT/US1995002322

申请日：1995-02-24

Applicant: MOTOROLA INC.

Inventor： MOTOROLA INC. ,  GONZALEZ, Armando, J. ,  CORNETT, Kenneth, D. ,  BORRAS, Jaime, A.

IPC: H03B05/30

CPC classification number: H03L1/022 ,  H03B5/1203 ,  H03B5/1231 ,  H03B5/124 ,  H03B5/368 ,  H03B2200/0008 ,  H03B2200/0012 ,  H03B2201/0291 ,  H03C3/09

Abstract: A tuning circuit for a reference oscillator (200) including voltage variable capacitors (222, 224) in a back to back configuration and providing a control terminal for voltage controlled tuning of the reference oscillator (200). Also included in the tuning circuit is a modulation bias circuit for modulating the reference oscillator (200).

Abstract translation: 一种用于参考振荡器（200）的调谐电路，包括背对背配置的电压可变电容器（222,224），并提供用于参考振荡器（200）的压控调谐的控制端子。 调谐电路中还包括用于调制参考振荡器（200）的调制偏置电路。

公开(公告)号：WO1994021038A1

公开(公告)日：1994-09-15

申请号：PCT/US1994002005

申请日：1994-02-18

Applicant: MOTOROLA INC.

Inventor： MOTOROLA INC. ,  BOCKELMAN, David, E. ,  STENGEL, Robert, E. ,  CORNETT, Kenneth, D.

IPC: H03H07/00

CPC classification number: H03H7/06

Abstract: An electronic circuit (300) includes first (302) and second (304) variable impedance devices coupled together. The fist (302) and second (304) variable impedance devices are designed such that each exhibits a transfer function which is substantially inverse with respect to the other about the operating point of the electronic circuit. This provides for an electronic circuit which exhibits verly low distortion characteristics. Circuits such as tunable filters, voltage-controlled oscillators (VCOs), receivers, etc. will benefit from using an electronic circuit (300) which exhibits such low distortion characteristics.

Abstract translation: 电子电路（300）包括耦合在一起的第一（302）和第二（304）可变阻抗器件。 第一（302）和第二（304）可变阻抗装置被设计成使得每个展现出相对于另一个关于电子电路的工作点基本上相反的传递函数。 这提供了显示出非常低的失真特性的电子电路。 诸如可调谐滤波器，压控振荡器（VCO），接收器等的电路将受益于使用具有这种低失真特性的电子电路（300）。