公开(公告)号：US20210351190A1

公开(公告)日：2021-11-11

申请号：US17380603

申请日：2021-07-20

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： JAR-MING HO

IPC: H01L27/108 ,  H01L23/522

Abstract: The present application discloses a method for fabricating a semiconductor device. The method includes: providing a substrate including a plurality of first regions and second regions; forming a plurality of bit line contacts over the first regions of the substrate; forming a plurality of bit lines respectively over the plurality of bit line contacts; forming a plurality of capacitor contacts respectively over the second regions of the substrate; forming a plurality of capacitor plugs respectively over the plurality of capacitor contacts; forming a plurality of first spacers respectively over a plurality of protruding portions of the plurality of capacitor plugs, wherein a width of the first spacer is larger than a width of the capacitor plug; and forming a plurality of capacitor structures over the plurality of first spacers; wherein at least one of the plurality of bit lines is an undulating stripe extending between two adjacent capacitor contacts.