公开(公告)号：EP2064814A1

公开(公告)日：2009-06-03

申请号：EP07826385.2

申请日：2007-09-14

Applicant: NXP B.V.

Inventor： PHILIPPE, Pascal

IPC: H04B1/04 ,  H03C5/00

CPC classification number: H04B1/04 ,  H03C5/00 ,  H04B2001/0491

Abstract: A radiofrequency transmitting device (D) is intended for delivering output signals having a chosen radiofrequency from input data split up into complementary phase data and amplitude data. This device (D) comprises i) a radiofrequency reference oscillator (RO) arranged for outputting a reference signal having a fixed radiofrequency reference, and ii) a digital phase modulator (PM) arranged for synthesizing the chosen radiofrequency from the fixed radiofrequency reference and for phase modulating the reference signal with the phase data, in order to produce an output signal having the chosen radiofrequency.

公开(公告)号：EP2038207A2

公开(公告)日：2009-03-25

申请号：EP07766754.1

申请日：2007-06-14

Applicant: NXP B.V.

Inventor： SWOROWSKI, Marc ,  CHEVRIE, David, D., R. ,  PHILIPPE, Pascal

IPC: B81C1/00

CPC classification number: B81C1/00198 ,  B81B2201/0292 ,  H03H3/0072

Abstract: Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.