公开(公告)号：WO2007102130A2

公开(公告)日：2007-09-13

申请号：PCT/IB2007/050770

申请日：2007-03-08

Applicant: NXP B.V. ,  SWOROWSKI, Marc ,  GAMAND, Patrice ,  PHILIPPE, Pascal

Inventor： SWOROWSKI, Marc ,  GAMAND, Patrice ,  PHILIPPE, Pascal

IPC: H03H9/02

CPC classification number: H03H9/02259 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/505 ,  H03H2009/02503

Abstract: The invention relates to a MEMS resonator having at least one mode shape comprising: a substrate (2) having a surface (12), and a resonator structure (1), wherein the resonator structure (1) is part of the substrate (2), characterized in that the resonator structure (1) is defined by a first closed trench (3) and a second closed trench (3), the first trench (3) being located inside the second trench (3) so as to form a tube structure (1) inside the substrate (2), and the resonator structure (1) being released from the substrate (2) only in directions parallel to the surface (12). The invention further relates to a method of manufacturing such a MEMS resonator.

Abstract translation: 本发明涉及一种具有至少一个模态形状的MEMS谐振器，其包括：具有表面（12）的衬底（2）和谐振器结构（1），其中谐振器结构（1） 是衬底（2）的一部分，其特征在于，所述谐振器结构（1）由第一闭合沟槽（3）和第二闭合沟槽（3）限定，所述第一沟槽（3）位于所述第二沟槽 3），以便在衬底（2）内部形成管结构（1），并且谐振器结构（1）仅在平行于表面（12）的方向上从衬底（2）释放。 本发明还涉及制造这种MEMS谐振器的方法。

公开(公告)号：WO2008001253A3

公开(公告)日：2008-01-03

申请号：PCT/IB2007/052270

申请日：2007-06-14

Applicant: NXP B.V. ,  SWOROWSKI, Marc ,  CHEVRIE, David, D., R. ,  PHILIPPE, Pascal

Inventor： SWOROWSKI, Marc ,  CHEVRIE, David, D., R. ,  PHILIPPE, Pascal

IPC: B81C1/00

Abstract: Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.

公开(公告)号：EP1997225A2

公开(公告)日：2008-12-03

申请号：EP07735055.1

申请日：2007-03-08

Applicant: NXP B.V.

Inventor： SWOROWSKI, Marc ,  GAMAND, Patrice ,  PHILIPPE, Pascal

IPC: H03H9/02

CPC classification number: H03H9/02259 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/505 ,  H03H2009/02503

Abstract: The invention relates to a MEMS resonator having at least one mode shape comprising: a substrate (2) having a surface (12), and a resonator structure (1), wherein the resonator structure (1) is part of the substrate (2), characterized in that the resonator structure (1) is defined by a first closed trench (3) and a second closed trench (3), the first trench (3) being located inside the second trench (3) so as to form a tube structure (1) inside the substrate (2), and the resonator structure (1) being released from the substrate (2) only in directions parallel to the surface (12). The invention further relates to a method of manufacturing such a MEMS resonator.

公开(公告)号：EP1997225B1

公开(公告)日：2009-09-02

申请号：EP07735055.1

申请日：2007-03-08

Applicant: NXP B.V.

Inventor： SWOROWSKI, Marc ,  GAMAND, Patrice ,  PHILIPPE, Pascal

IPC: H03H9/02

CPC classification number: H03H9/02259 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/505 ,  H03H2009/02503

Abstract: The invention relates to a MEMS resonator having at least one mode shape comprising: a substrate (2) having a surface (12), and a resonator structure (1), wherein the resonator structure (1) is part of the substrate (2), characterized in that the resonator structure (1) is defined by a first closed trench (3) and a second closed trench (3), the first trench (3) being located inside the second trench (3) so as to form a tube structure (1) inside the substrate (2), and the resonator structure (1) being released from the substrate (2) only in directions parallel to the surface (12). The invention further relates to a method of manufacturing such a MEMS resonator.

公开(公告)号：EP2038207A2

公开(公告)日：2009-03-25

申请号：EP07766754.1

申请日：2007-06-14

Applicant: NXP B.V.

Inventor： SWOROWSKI, Marc ,  CHEVRIE, David, D., R. ,  PHILIPPE, Pascal

IPC: B81C1/00

CPC classification number: B81C1/00198 ,  B81B2201/0292 ,  H03H3/0072

Abstract: Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.