公开(公告)号：WO2013188202A1

公开(公告)日：2013-12-19

申请号：PCT/US2013/044447

申请日：2013-06-06

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

Inventor： SASAGAWA, Teruo

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/4409 ,  C23C16/45544 ,  Y10T137/0318

Abstract: This disclosure provides systems, methods and apparatus for purge gas delivery in an atomic layer deposition (ALD) processing apparatus. The ALD processing apparatus can include a processing chamber including a lid and a chamber wall. One or more process gas lines for delivering process gases are coupled to one or more process gas delivery sources in the processing chamber. An o-ring can be positioned proximate an outer edge of the processing chamber to provide a seal with the chamber wall and the lid. The lid is configured to open for removal of the substrate and close to process the substrate. A purge line for delivering purge gas is coupled to one or more purge gas delivery line sources in the processing chamber, and the purge gas delivery line sources are disposed between the o-ring and the one or more process gas delivery sources

Abstract translation: 本公开提供了用于在原子层沉积（ALD）处理装置中吹扫气体输送的系统，方法和装置。 ALD处理装置可以包括具有盖和室壁的处理室。 用于输送处理气体的一个或多个工艺气体管线被耦合到处理室中的一个或多个处理气体输送源。 O形环可以位于处理室的外边缘附近以提供与室壁和盖的密封。 盖被构造成打开以移除基板并接近处理基板。 用于输送净化气体的净化管线与处理室中的一个或多个吹扫气体输送管线源相耦合，净化气体输送管线源设置在O形环和一个或多个工艺气体输送源

公开(公告)号：WO2013078052A1

公开(公告)日：2013-05-30

申请号：PCT/US2012/065191

申请日：2012-11-15

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

Inventor： SASAGAWA, Teruo

IPC: G02B26/00 ,  G02B6/00

CPC classification number: G02B26/001 ,  G02B2207/113

Abstract: This disclosure provides systems, methods and apparatus for providing illumination by using a light guide to distribute light. In an aspect, an illumination system is provided with a substrate having a first side and a second side opposite the first. The substrate can be optically transmissive and form part of the light guide for distributing light. The first side of the substrate is processed using a first processing technology. Processing the first side includes forming a light turning feature on the first side and forming a protective layer over the light turning feature. The second side is processed using a second processing technology to form display elements, while the protective layer protects the first side from damage. The first and second processing technologies can be performed using the same tool set. In addition to protecting the first side, the protective layer may function as an optical cladding and/or passivation layer.

Abstract translation: 本公开提供了通过使用光导来分配光来提供照明的系统，方法和装置。 一方面，照明系统设置有具有第一侧和与第一侧相对的第二侧的基板。 衬底可以是光学透射的并且形成用于分配光的光导的一部分。 使用第一处理技术处理基板的第一面。 处理第一侧包括在第一侧上形成光转动特征并在光转向特征上形成保护层。 使用第二处理技术处理第二面以形成显示元件，而保护层保护第一面免受损坏。 可以使用相同的工具集来执行第一和第二处理技术。 除了保护第一侧之外，保护层可以用作光学包层和/或钝化层。

公开(公告)号：WO2012061205A1

公开(公告)日：2012-05-10

申请号：PCT/US2011/058145

申请日：2011-10-27

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  SASAGAWA, Teruo ,  FENNELL, Leonard, Eugene

Inventor： SASAGAWA, Teruo ,  FENNELL, Leonard, Eugene

IPC: H01H59/00 ,  H01L21/768 ,  B81B3/00

CPC classification number: B81B3/001 ,  B81B2201/042 ,  G02B26/001

Abstract: This disclosure provides systems, methods, and apparatus for producing roughness in an electromechanical device by nucleation under plasma CVD conditions. In one aspect, a substrate and at least a first layer are provided. The disclosure further provides gas phase nucleating particles under plasma CVD conditions and depositing a first layer, where the particles are incorporated into the first layer to create roughness in the first layer. The roughness may be transferred to a second layer by conformal deposition of the second layer over the first layer. The roughness of the second layer corresponds to the roughness of the first layer, where the first layer has a roughness greater than or equal to about 20 Å root mean square (RMS).

Abstract translation: 本公开提供了在等离子体CVD条件下通过成核产生机电装置中的粗糙度的系统，方法和装置。 在一个方面，提供了一个基底和至少一个第一层。 本公开进一步在等离子体CVD条件下提供气相成核颗粒并沉积第一层，其中颗粒结合到第一层中以在第一层中产生粗糙度。 粗糙度可以通过在第一层上的第二层的共形沉积而转移到第二层。 第二层的粗糙度对应于第一层的粗糙度，其中第一层具有大于或等于约均方根（RMS）的粗糙度。

公开(公告)号：WO2009020801A3

公开(公告)日：2009-02-12

申请号：PCT/US2008/071498

申请日：2008-07-29

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  SASAGAWA, Teruo

Inventor： SASAGAWA, Teruo

IPC: B81B7/00

Abstract: A microelectromechanical systems (MEMS) device includes a substrate (20), an array region (ARRAY), and a peripheral region (INTERCONNECT). The array region (ARRAY) includes a lower electrode (16A, 16B), a movable upper electrode (14), and a cavity (19) between the lower electrode (16A, 16B) and the upper electrode (14). The peripheral region (INTERCONNECT) includes a portion of a layer forming the upper electrode (14) in the array region (ARRAY) and an electrical interconnect (58). The electrical interconnect (58) includes a conductive material (50) electrically connected to at least one of the lower electrode (16A, 16B) and the upper electrode (14). The electrical interconnect (58) is formed of a layer separate from and below the layer forming the upper electrode (14) in the array region (ARRAY). The conductive material (50) is selected from the group consisting of nickel, chromium, copper, and silver.

公开(公告)号：WO2007013939A1

公开(公告)日：2007-02-01

申请号：PCT/US2006/028096

申请日：2006-07-19

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  SASAGAWA, Teruo ,  CHUI, Clarence ,  KOTHARI, Manish ,  GANTI, Surya, Prakash ,  SAMPSELL, Jeffrey, B.

Inventor： SASAGAWA, Teruo ,  CHUI, Clarence ,  KOTHARI, Manish ,  GANTI, Surya, Prakash ,  SAMPSELL, Jeffrey, B.

IPC: B81B3/00

CPC classification number: G02B26/0841 ,  B81B2201/042 ,  B81B2203/0307 ,  B81C1/00595 ,  B81C2201/0136 ,  G02B6/3584 ,  G02B26/001

Abstract: A microelectromechanical systems device having support structures formed of sacrificial material that is selectively diffused with a dopant material or formed of a selectively oxidized metal sacrificial material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a diffused or oxidized sacrificial material.

Abstract translation: 具有由牺牲材料形成的支撑结构的微机电系统装置，该牺牲材料选择性地用掺杂剂材料扩散或由选择性氧化的金属牺牲材料形成。 微机电系统装置包括其上形成有电极的基板。 另一电极通过空腔与第一电极分离，并形成可移动层，其由由扩散或氧化的牺牲材料形成的支撑结构支撑。

公开(公告)号：WO2013019425A2

公开(公告)日：2013-02-07

申请号：PCT/US2012/047439

申请日：2012-07-19

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  SASAGAWA, Teruo

Inventor： SASAGAWA, Teruo

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/3244 ,  H01J37/32477

Abstract: This disclosure provides systems, methods and apparatus for fabricating electromechanical system devices within a plasma-etch reaction chamber. In one aspect, a plasma-etch system includes a plasma-etch reaction chamber, an inlet in fluid communication with the reaction chamber, a cathode positioned within the reaction chamber and a non-hollow anode positioned within the reaction chamber between the inlet and the cathode. The inlet is configured to introduce a process gas into the reaction chamber such that at least a portion of the process gas strikes an upper surface of the anode and is allowed to flow across the upper surface and around the edges of the anode. The anode can be a liner plate in place of a showerhead.

Abstract translation: 本公开提供了用于在等离子蚀刻反应室内制造机电系统装置的系统，方法和设备。 在一个方面中，等离子体蚀刻系统包括等离子体蚀刻反应室，与反应室流体连通的入口，位于反应室内的阴极和位于反应室内的非空心阳极， 阴极。 入口构造成将工艺气体引入反应室，使得工艺气体的至少一部分撞击阳极的上表面并且允许流过上表面并围绕阳极的边缘流动。 阳极可以是衬垫板来代替喷头。

公开(公告)号：WO2012067826A2

公开(公告)日：2012-05-24

申请号：PCT/US2011/058983

申请日：2011-11-02

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  BITA, Ion ,  LI, Kebin ,  RAO, Rashmi ,  SASAGAWA, Teruo ,  ARBUCKLE, Brian, W. ,  CUMMINGS, William

Inventor： BITA, Ion ,  LI, Kebin ,  RAO, Rashmi ,  SASAGAWA, Teruo ,  ARBUCKLE, Brian, W. ,  CUMMINGS, William

IPC: G02B6/00 ,  F21V8/00

CPC classification number: G02B26/001 ,  G02B6/005 ,  Y10T29/49826

Abstract: This disclosure provides systems, methods and apparatus for providing illumination by using a light guide to distribute light. In one aspect, a passivation layer is attached to the light guide of an illumination device. The passivation layer may be an optically transparent moisture barrier and may have a thickness and refractive index which allows it to function as an anti-reflective coating. The passivation layer may protect moisture-sensitive underlying features, such as metallized light turning features that may be present in the light guide. The light turning features may be configured to redirect light out of the light guide. In some implementations, the redirected light may be applied to illuminate a display.

Abstract translation: 本公开提供了通过使用光导来分配光来提供照明的系统，方法和装置。 在一个方面，钝化层附着到照明装置的光导。 钝化层可以是光学透明的水分屏障，并且可以具有允许其用作抗反射涂层的厚度和折射率。 钝化层可以保护水分敏感的底层特征，例如可能存在于光导中的金属化的光转动特征。 光转向特征可以被配置为将光重定向到光导中。 在一些实施方案中，可以应用重定向的光来照亮显示器。

公开(公告)号：WO2009036215A2

公开(公告)日：2009-03-19

申请号：PCT/US2008/076077

申请日：2008-09-11

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  YAN, Xiaoming ,  HO, Chok ,  HEALD, David ,  GOUSEV, Evgeni ,  HERTZLER, Benjamin, W. ,  FLOYD, Philip ,  SASAGAWA, Teruo ,  LONDERGAN, Ana ,  BITA, Ion ,  ZION, Todd

Inventor： YAN, Xiaoming ,  HO, Chok ,  HEALD, David ,  GOUSEV, Evgeni ,  HERTZLER, Benjamin, W. ,  FLOYD, Philip ,  SASAGAWA, Teruo ,  LONDERGAN, Ana ,  BITA, Ion ,  ZION, Todd

IPC: H01L21/311 ,  H01L21/3213 ,  B01D53/68

CPC classification number: H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

Abstract: The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

Abstract translation: 可以以各种方式增加蚀刻工艺的效率，并且可以降低蚀刻工艺的成本。 未蚀刻的蚀刻剂可以在蚀刻过程中被隔离并再循环。 蚀刻副产物可以在蚀刻过程中从蚀刻系统中收集和去除。 蚀刻剂的组分可以被分离并用于一般的另外的蚀刻剂。 蚀刻剂或被蚀刻的层中的任一个或两者也可以针对特定的蚀刻工艺进行优化。

公开(公告)号：WO2009006122A1

公开(公告)日：2009-01-08

申请号：PCT/US2008/068065

申请日：2008-06-24

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  SASAGAWA, Teruo ,  KOGUT, Lior ,  TUNG, Ming-hau

Inventor： SASAGAWA, Teruo ,  KOGUT, Lior ,  TUNG, Ming-hau

IPC: G02B26/00 ,  B81B3/00 ,  G09G3/34 ,  H01L31/075

CPC classification number: G02B26/001 ,  H01L27/142 ,  H01L31/072 ,  H01L31/0725 ,  Y02E10/50

Abstract: Embodiments of the present invention relate to interferometric display devices comprising an interferometric modulator and a solar cell and methods of making thereof. In some embodiments, the solar cell is configured to provide energy to the interferometric modulator. The solar cell and the interferometric modulator may be formed above the same substrate. A layer of the solar cell may be shared with a layer of the interferometric modulator.

Abstract translation: 本发明的实施例涉及包括干涉式调制器和太阳能电池的干涉式显示装置及其制造方法。 在一些实施例中，太阳能电池被配置为向干涉式调制器提供能量。 太阳能电池和干涉式调制器可以形成在相同基板上方。 一层太阳能电池可以与干涉式调制器的一层共享。

公开(公告)号：WO2007014022A1

公开(公告)日：2007-02-01

申请号：PCT/US2006/028342

申请日：2006-07-20

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  CHUI, Clarence ,  CHUNG, Wonsuk ,  GANTI, Surya, Prakash ,  KOTHARI, Manish ,  MILES, Mark, W. ,  SAMPSELL, Jeffrey, B. ,  SASAGAWA, Teruo

Inventor： CHUI, Clarence ,  CHUNG, Wonsuk ,  GANTI, Surya, Prakash ,  KOTHARI, Manish ,  MILES, Mark, W. ,  SAMPSELL, Jeffrey, B. ,  SASAGAWA, Teruo

IPC: B81B3/00 ,  G02B26/00

CPC classification number: G02B26/001 ,  B81B3/007 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/053

Abstract: Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.

Abstract translation: MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或者由导电可移动层中的凹陷下方的柱支撑。 在某些实施例中，铆钉结构的部分延伸穿过可移动层并接触下面的层。 在其他实施例中，用于形成刚性支撑结构的材料也可以用于钝化与MEMS装置电连接的其它暴露的电引线，保护电引线免受损坏或其他干扰。