公开(公告)号：US20150321905A1

公开(公告)日：2015-11-12

申请号：US14270945

申请日：2014-05-06

Applicant: Raytheon Company

Inventor： Roland W. Gooch ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy ,  Buu Q. Diep

IPC: B81B7/00 ,  H01L37/00

CPC classification number: B81B7/0067 ,  B81B7/0035 ,  B81B2201/0207 ,  B81C1/00317 ,  G01J5/045 ,  G01J5/08 ,  G01J5/20 ,  H01L37/00

Abstract: A structure for detecting electromagnetic radiation having a predetermined wavelength. The structure includes a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation. A cover wafer is provided having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element. A bond gap spacer structure is provided for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a distance less than a fraction of the predetermined wavelength when. the cover wafer is bonded to the device wafer.

Abstract translation: 一种用于检测具有预定波长的电磁辐射的结构。 该结构包括具有传感元件的器件晶片，其响应于电磁辐射而设置在器件晶片的表面的预定区域上。 提供了覆盖晶片，其具有对电磁辐射透明的区域，以将电磁辐射穿过透明区域传递到感测元件的表面上。 提供了一种键间隔结构，用于当从盖玻片的透明区域的相对表面以小于预定波长的一小部分的距离来支撑感测元件的表面时。 盖晶片被结合到器件晶片。

公开(公告)号：US20180226309A1

公开(公告)日：2018-08-09

申请号：US15942911

申请日：2018-04-02

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC: H01L23/10 ,  H01L21/768 ,  H01L21/52 ,  H01L27/146 ,  H01L23/498 ,  H01L23/26 ,  B81B7/00 ,  B81C1/00

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

公开(公告)号：US09966320B2

公开(公告)日：2018-05-08

申请号：US15270145

申请日：2016-09-20

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC: H01L23/48 ,  H01L23/02 ,  H01L23/10 ,  H01L23/498 ,  H01L21/768 ,  B81B7/00 ,  H01L23/26 ,  H01L27/146 ,  B81C1/00 ,  H01L21/52

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

公开(公告)号：US10262913B2

公开(公告)日：2019-04-16

申请号：US15942911

申请日：2018-04-02

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC: H01L23/48 ,  H01L23/10 ,  H01L23/498 ,  H01L21/768 ,  B81B7/00 ,  H01L23/26 ,  H01L27/146 ,  B81C1/00 ,  H01L21/52

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

公开(公告)号：US09227839B2

公开(公告)日：2016-01-05

申请号：US14270945

申请日：2014-05-06

Applicant: Raytheon Company

Inventor： Roland W. Gooch ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy ,  Buu Q. Diep

IPC: H01L23/02 ,  B81B7/00 ,  H01L37/00

CPC classification number: B81B7/0067 ,  B81B7/0035 ,  B81B2201/0207 ,  B81C1/00317 ,  G01J5/045 ,  G01J5/08 ,  G01J5/20 ,  H01L37/00

Abstract: A structure for detecting electromagnetic radiation having a predetermined wavelength. The structure includes a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation. A cover wafer is provided having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element. A bond gap spacer structure is provided for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a distance less than a fraction of the predetermined wavelength when the cover wafer is bonded to the device wafer.

Abstract translation: 一种用于检测具有预定波长的电磁辐射的结构。 该结构包括具有传感元件的器件晶片，其响应于电磁辐射而设置在器件晶片的表面的预定区域上。 提供了覆盖晶片，其具有对电磁辐射透明的区域，以将电磁辐射穿过透明区域传递到感测元件的表面上。 提供了一种键间隔结构，用于当覆盖晶片接合到器件晶片时，从盖晶片的透明区域的相对表面支撑感测元件的表面，该距离小于预定波长的一小部分。

公开(公告)号：US20150014854A1

公开(公告)日：2015-01-15

申请号：US13939400

申请日：2013-07-11

Applicant: Raytheon Company

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas Allan Kocian

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

Abstract translation: 电子装置及其制造方法。 一种或多种方法可以包括提供具有空腔和围绕空腔的表面的盖晶片和具有检测器装置和参考装置的装置晶片。 在某些实例中，可以将钛材料的阻焊层沉积到盖晶片的表面上。 可以进一步激活钛材料的阻焊层作为吸气剂。 在各种示例中，盖晶片和器件晶片可以使用焊料接合在一起，并且钛材料的阻焊层可以防止焊料接触盖晶片的表面。