Abstract:
A focal plane array includes a mosaic integrated circuit device having a plurality of discrete integrated circuit tiles mounted on a motherboard. The focal plane array includes an optically continuous detector array electrically connected to the mosaic integrated circuit device with an interposer disposed therebetween. The interposer is configured to adjust a pitch of the continuous detector array to match a pitch of each of the plurality of discrete integrated circuit tiles so that the optical gaps between each of the plurality of integrated circuit tiles on the motherboard are minimized and the detector array is optically continuous, having high yield over the large format focal plane array.
Abstract:
Microbolometer arrays incorporating per-pixel dark reference structures for non-uniformity correction. In one example a thermal imager includes a device substrate, a microbolometer array disposed on the device substrate and including a plurality of detector elements arranged in a two-dimensional array, each detector element including an imaging microbolometer and a reference microbolometer, the imaging microbolometer being configured to receive electromagnetic radiation from a viewed scene and to produce an image signal in response to receiving the electromagnetic radiation, the image signal including a component produced due to thermal noise in the respective detector element, and the reference microbolometer being shielded from receiving the electromagnetic radiation and configured to produce a reference signal indicative of the thermal noise, wherein the thermal imaging device is configured to produce an image of the viewed scene based on a combination of the image signals and the reference signals from the plurality of detector elements.
Abstract:
An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.
Abstract:
An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.
Abstract:
A system and method for forming a wafer level package. In one example, a substrate used in the wafer level package includes a surface defined by a wafer level package (WLP) region and an external region, and a layer of getter material is disposed on at least a portion of the external region. According to one embodiment, the external region comprises a saw-to-reveal (STR) region of the wafer.
Abstract:
A system and method for forming a wafer level package. In one example, a substrate used in the wafer level package includes a surface defined by a wafer level package (WLP) region and an external region, and a layer of getter material is disposed on at least a portion of the external region. According to one embodiment, the external region comprises a saw-to-reveal (STR) region of the wafer.
Abstract:
A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.
Abstract:
A method for forming a coating of material on selected portions of a surface of a substrate having a plurality of cavities, each cavity having outer, peripheral sidewalls extending outwardly from the surface. The method includes: providing a structure having a release agent thereon; contacting top surface of the wafer with the release agent to transfer portions of the release agent to the top surface of the wafer while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure; the release agent disposed on the top surface of the wafer and with the bottom portions of the cavities void of the release agent; exposing the intermediate structure to the material to blanket coat the material on both the release agent and the bottom portions of the cavities; and selectively removing the release agent together with the coating material while leaving the coating material on the bottom portions of the cavities.
Abstract:
A digital pixel includes a capacitive transimpedence amplifier (CTIA) coupled to a photodiode that receives an electrical charge and output an integration voltage. An integration capacitor coupled to the CTIA accumulates the integration voltage over an integration period. A comparator compares the accumulated integration voltage with a threshold voltage and generates a control signal at a first level each time the accumulated integration voltage is greater than the threshold voltage. A charge subtraction circuit receives the control signal at the first level and discharges the accumulated integration voltage each time the control signal at the first level is received from the comparator. An analog or digital counter receives the control signal at the first level and adjusts a counter value each time the control signal is received from the comparator. An output interface communicates the counter value to an image processing circuit at an end of the integration period.
Abstract:
Methods for reducing wafer bow induced by an anti-reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.