公开(公告)号：DE60036449T2

公开(公告)日：2008-06-19

申请号：DE60036449

申请日：2000-03-29

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO ,  SHIMODA TATSUYA ,  SEKI SHUNICHI

IPC: H01L29/786 ,  G02F1/1368 ,  H01L21/208 ,  H01L21/288 ,  H01L21/312 ,  H01L21/316 ,  H01L21/336

Abstract: All or a part of the thin films such as a silicon film, an insulation film and a conductive film constituting the thin film transistor is formed using a liquid material by a method mainly comprising the steps of: foaming a coating film by coating a substrate with the liquid material; and forming a thin film with a desired thickness by heat-treating the coating film.

公开(公告)号：GB2358080B

公开(公告)日：2004-06-02

申请号：GB0000374

申请日：2000-01-07

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO ,  MIYASAKA MITSUTOSHI ,  MIGLIORATO PIERO

IPC: H01L21/336 ,  H01L29/786 ,  H01L21/20

Abstract: The present invention provides a thin-film transistor (TFT) and its production method which enables an arrangement restraining bipolar transistor type behavior, in order to stabilize saturation current and to provide a TFT that can improve reliability. The TFT includes a channel region facing a gate electrode through a gate insulating film, a source electrode connected to the channel region and a drain region connected to the channel region on the side opposite this source region are formed in a polycrystal semiconductor film that was patterned in island forms. In the channel region, a recombination center is formed for capturing a small number of carriers (holes) by introducing impurities, such as inert gases, metals, Group III elements, Group IV elements and Group V elements after a crystallization process is carried out on a semiconductor film 100.

公开(公告)号：AU2384101A

公开(公告)日：2001-07-16

申请号：AU2384101

申请日：2001-01-02

Applicant: SEIKO EPSON CORP

Inventor： LUI BASIL ,  MIGLIORATO PIERO ,  YUDASAKA ICHIO ,  MIYASAKA MITSUTOSHI

IPC: H01L29/423 ,  H01L21/336 ,  H01L29/41 ,  H01L29/786

Abstract: The present invention provides, in a TFT, a gate electrode and a channel domain that are plurally divided in the channel-length direction, a low-concentration domain that is formed between the divided channel domains, and a low-concentration drain domain that adjoins a second channel domain located closest to a drain domain side among the divided channel domains. Therefore, even if the impurity concentration is relatively high in the low-concentration domain located between the divided channel domains and a low-concentration drain domain, an abnormal increase of drain current in the saturated region can be prevented, and a TFT with a high drain current level can be obtained. Thus, the present invention provides a TFT and its manufacturing method where abnormal increase of drain current in the saturated region can be prevented and the drain current level in the saturated region is sufficiently high.

公开(公告)号：AU2383801A

公开(公告)日：2001-07-16

申请号：AU2383801

申请日：2001-01-02

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO ,  MIYASAKA MITSUTOSHI ,  MIGLIORATO PIERO

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786

Abstract: The present invention provides a thin-film transistor (TFT) and its production method which enables an arrangement restraining bipolar transistor type behavior, in order to stabilize saturation current and to provide a TFT that can improve reliability. The TFT includes a channel region facing a gate electrode through a gate insulating film, a source electrode connected to the channel region and a drain region connected to the channel region on the side opposite this source region are formed in a polycrystal semiconductor film that was patterned in island forms. In the channel region, a recombination center is formed for capturing a small number of carriers (holes) by introducing impurities, such as inert gases, metals, Group III elements, Group IV elements and Group V elements after a crystallization process is carried out on a semiconductor film 100.

公开(公告)号：AU2383601A

公开(公告)日：2001-07-16

申请号：AU2383601

申请日：2001-01-02

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO ,  MIYASAKA MITSUTOSHI ,  MIGLIORATO PIERO

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/423 ,  H01L29/786

Abstract: The present invention provides a thin film transistor (TFT) and its production method which enable the stabilizing of saturation current and improving reliability by improving the film quality of the channel region. The TFT includes a channel region towering over a gate electrode through a gate insulation film, a source region connecting to the channel region and a drain region connecting to the channel region on an opposite side of the source region are formed on the polycrystal semiconductor film on which island-like patterning is performed. An indented section is formed on a surface of the channel region, and the section corresponding to the indented section becomes a recombination center which captures the small-number carrier (holes) because the degree of the crystallization is low in the section corresponding to the indented section due to shift from the optimum conditions at the time of laser annealing of the semiconductor.

公开(公告)号：AU2630499A

公开(公告)日：1999-09-06

申请号：AU2630499

申请日：1999-02-19

Applicant: CAMBRIDGE DISPLAY TECH LTD ,  SEIKO EPSON CORP

Inventor： FRIEND RICHARD HENRY ,  TOWNS CARL ROBERT ,  CARTER JULIAN CHARLES ,  HEEKS STEPHEN KARL ,  WITTMAN HERMANN FELIX ,  PICHLER KARL ,  YUDASAKA ICHIO

IPC: H05B33/10 ,  G09F9/30 ,  H01L21/336 ,  H01L27/28 ,  H01L27/32 ,  H01L29/786 ,  H01L51/05 ,  H01L51/50 ,  H01L51/52 ,  H05B33/12 ,  H05B33/26 ,  H01L51/20 ,  H01L27/15

Abstract: A method for forming a display device, comprising: depositing a thin-film transistor switch circuit on a substrate; depositing by ink-jet printing an electrode layer of light transmissive conductive organic material in electrical contact with the output of the thin-film transistor circuit; and depositing an active region of the device over the electrode layer.

公开(公告)号：AU2528999A

公开(公告)日：1999-09-06

申请号：AU2528999

申请日：1999-02-05

Applicant: CAMBRIDGE DISPLAY TECH LTD ,  SEIKO EPSON CORP

Inventor： FRIEND RICHARD HENRY ,  PICHLER KARL ,  YUDASAKA ICHIO

IPC: H05B33/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/26 ,  H01L27/15

Abstract: An organic light-emitting device comprising a transparent cover sheet; a region of organic light-emitting material behind the cover sheet; a region of circuitry behind the cover sheet for regulating the flow of current to the organic light-emitting material; and a non-light-transmissive layer which lies between the cover sheet and the circuitry.

公开(公告)号：DE69939104D1

公开(公告)日：2008-08-28

申请号：DE69939104

申请日：1999-02-19

Applicant: CAMBRIDGE DISPLAY TECH LTD ,  SEIKO EPSON CORP

Inventor： FRIEND RICHARD HENRY ,  TOWNS CARL ROBERT ,  CARTER JULIAN CHARLES ,  HEEKS STEPHEN KARL ,  WITTMAN HERMANN FELIX ,  PICHLER KARL ,  YUDASAKA ICHIO

IPC: H01L51/52 ,  H05B33/10 ,  G09F9/30 ,  H01L21/336 ,  H01L27/28 ,  H01L27/32 ,  H01L29/786 ,  H01L51/05 ,  H01L51/50 ,  H05B33/12 ,  H05B33/26

Abstract: A method for forming a display device, comprising: depositing a thin-film transistor switch circuit on a substrate; depositing by ink-jet printing an electrode layer of light transmissive conductive organic material in electrical contact with the output of the thin-film transistor circuit; and depositing an active region of the device over the electrode layer.

公开(公告)号：DE69937316T2

公开(公告)日：2008-07-10

申请号：DE69937316

申请日：1999-03-16

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO

IPC: G09F9/30 ,  H05B33/22 ,  C30B29/64 ,  G02B5/20 ,  G02B5/22 ,  G02F1/1335 ,  H01L27/32 ,  H01L51/05 ,  H01L51/40 ,  H01L51/50 ,  H01L51/56 ,  H05B33/10

Abstract: A substrate structure, comprising a substrate, a plurality of thin film layers laminated on the substrate, and a bank enclosing an area in which the plurality of the thin film layers are arranged, the bank including a first layer, a second layer and a third layer, the second layer being disposed between the first and third layers, the first and third layers being made from one of an inorganic material and an organic material, the third layer being made from the other of the inorganic material and the organic material.

公开(公告)号：DE60038931D1

公开(公告)日：2008-07-03

申请号：DE60038931

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： SEKI SHUNICHI ,  SHIMODA TATSUYA ,  MIYASHITA SATORU ,  FURUSAWA MASAHIRO ,  YUDASAKA ICHIO ,  MATSUKI YASUO ,  TAKEUCHI YASUMASA

IPC: H01L21/208 ,  C01B33/02 ,  C23C18/06 ,  C23C18/08 ,  C23C18/12 ,  H01L21/336 ,  H01L31/18 ,  H01L51/00 ,  H01L51/40

Abstract: An ink composition 11 containing a silicon precursor is selectively discharged into predetermined regions on a substrate from an ink jet head 12 to form a pattern of the silicon precursor, and is subjected to a heat and/or light treatment to convert the silicon precursor into an amorphous silicon film 15 or a polycrystalline silicon film 16. A silicon film pattern is thereby obtained on a large area at low cost with low energy.