公开(公告)号：WO9948338A8

公开(公告)日：1999-12-02

申请号：PCT/JP9901289

申请日：1999-03-16

Applicant: SEIKO EPSON CORP ,  YUDASAKA ICHIO

Inventor： YUDASAKA ICHIO

IPC: G09F9/30 ,  C30B29/64 ,  G02B5/20 ,  G02B5/22 ,  G02F1/1335 ,  H01L27/32 ,  H01L51/05 ,  H01L51/40 ,  H01L51/50 ,  H01L51/56 ,  H05B33/10 ,  H05B33/22 ,  G09F9/00

CPC classification number: H01L27/3246 ,  G02B5/201 ,  G02B5/223 ,  H01L27/3283 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/56 ,  Y10T428/24157 ,  Y10T428/24355 ,  Y10T428/249994

Abstract: A method for forming a thin film comprises repeating the step of forming an affinity bank layer (111-11n) of a material (inorganic material such as SiO2) exhibiting an affinity with a thin film material liquid (130) and the step of forming a nonaffinity bank layer (121-12n) of a material (organic material such as resist) exhibiting a nonaffinity with the thin film material liquid (130) so as to form a bank (110) of alternate affinity bank layers and nonaffinity bank layers, filling the space between the banks with the thin film material liquid (130) by an ink-jet method, and performing heat treatment so as to form thin film layers (131-13n) in order. By performing the steps, the cost necessary for affinity control is reduced, and a multilayer thin film with a uniform thickness is formed.

Abstract translation: 形成薄膜的方法包括重复形成与薄膜材料液体（130）显示亲和性的材料（诸如SiO 2的无机材料）的亲和层（111-11n）的步骤，以及形成 与薄膜材料液体（130）呈现非亲和性的材料（诸如抗蚀剂的有机材料）的非亲和层（121-12n），以形成交替的亲和层和不亲和层的层（110），填充 通过喷墨法在薄膜材料液体（130）之间的空间之间进行热处理，从而依次形成薄膜层（131〜13n）。 通过执行这些步骤，减少了亲和力控制所需的成本，并且形成了具有均匀厚度的多层薄膜。

公开(公告)号：DE69939514D1

公开(公告)日：2008-10-23

申请号：DE69939514

申请日：1999-03-17

Applicant: SEIKO EPSON CORP

Inventor： SEKI SYUNICHI ,  KIGUCHI HIROSHI ,  YUDASAKA ICHIO ,  MIYAJIMA HIROO

IPC: G02B5/20 ,  H05B1/00 ,  G09F9/00 ,  G09F9/30 ,  G09F9/33 ,  H01L27/00 ,  H01L27/32 ,  H01L33/26 ,  H01L33/42 ,  H01L33/48 ,  H01L51/00 ,  H01L51/40 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22

Abstract: A method for manufacturing a flat panel display device includes a step of selectively forming, on a bank formation surface having an inorganic material portion, banks containing at least an organic material, and filling areas enclosed by the banks with a liquid thin film material for display to form a thin film layer, whereby the method further comprises: a first step of performing an oxygen gas plasma treatment for the banks and the bank formation surface; a second step of performing fluorine-based gas plasma treatment subsequent to the first process; and a thin film formation step of filling the areas enclosed by the banks with the liquid thin film material to form the thin film layer.

公开(公告)号：DE69927225D1

公开(公告)日：2005-10-20

申请号：DE69927225

申请日：1999-03-16

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO

IPC: G09F9/30 ,  C30B29/64 ,  G02B5/20 ,  G02B5/22 ,  G02F1/1335 ,  H01L27/32 ,  H01L51/05 ,  H01L51/40 ,  H01L51/50 ,  H01L51/56 ,  H05B33/10 ,  H05B33/22

Abstract: A substrate structure, comprising a substrate, a plurality of thin film layers laminated on the substrate, and a bank enclosing an area in which the plurality of the thin film layers are arranged, the bank including a first layer, a second layer and a third layer, the second layer being disposed between the first and third layers, the first and third layers being made from one of an inorganic material and an organic material, the third layer being made from the other of the inorganic material and the organic material.

公开(公告)号：DE69824392T2

公开(公告)日：2005-06-16

申请号：DE69824392

申请日：1998-08-25

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO

IPC: G09F9/30 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H05B33/04 ,  H05B33/12 ,  H05B33/22 ,  H05B33/26 ,  G02F1/136 ,  H01L51/20 ,  H01L27/00

Abstract: In an active matrix display device 1 in accordance with the present invention, each pixel 7 is provided with a pixel electrode 41, an organic semiconductor film 43 deposited on the upper layer side of the pixel electrode 41, and a thin film luminescent element 40 provided with an opposed electrode op formed on the upper layer side of the organic semiconductor film 43. A protective film 60 covering almost the entire surface of a substrate is formed on the upper layer of the opposed electrode op. The protective film 60 prevents the entry of moisture or oxygen to inhibit the deterioration of the thin film luminescent element 40.

公开(公告)号：DE69829458D1

公开(公告)日：2005-04-28

申请号：DE69829458

申请日：1998-08-20

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO

IPC: H01L27/00 ,  H01L27/32 ,  H01L51/00 ,  H01L51/40 ,  G09F9/30 ,  H01L33/00 ,  H05B33/22 ,  C07C49/255

Abstract: In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device (1) is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region for forming the organic semiconductive film (43) of the thin film luminescent device (40) by an ink-jet process. The bank layer (bank) consists of a lower insulating layer (61) composed of a thick inorganic material and an upper insulating layer (62) of an organic material which is deposited on the lower insulating layer (61) and has a smaller thickness so as to avoid contact of the organic semiconductive film (43) with the upper insulating layer (62).

公开(公告)号：GB2367424B

公开(公告)日：2004-10-27

申请号：GB0023792

申请日：2000-09-29

Applicant: SEIKO EPSON CORP

Inventor： MIGLIORATO PIERO ,  INOUE SATOSHI ,  YUDASAKA ICHIO

IPC: G11C11/22 ,  H01L27/115 ,  H01L27/12 ,  H01L29/786

公开(公告)号：GB2358083B

公开(公告)日：2004-02-18

申请号：GB0000379

申请日：2000-01-07

Applicant: SEIKO EPSON CORP

Inventor： LUI BASIL ,  MIGLIORATO PIERO ,  YUDASAKA ICHIO ,  MIYASAKA MITSUTOSHI

IPC: H01L29/423 ,  H01L21/336 ,  H01L29/41 ,  H01L29/786

Abstract: The present invention provides, in a TFT, a gate electrode and a channel domain that are plurally divided in the channel-length direction, a low-concentration domain that is formed between the divided channel domains, and a low-concentration drain domain that adjoins a second channel domain located closest to a drain domain side among the divided channel domains. Therefore, even if the impurity concentration is relatively high in the low-concentration domain located between the divided channel domains and a low-concentration drain domain, an abnormal increase of drain current in the saturated region can be prevented, and a TFT with a high drain current level can be obtained. Thus, the present invention provides a TFT and its manufacturing method where abnormal increase of drain current in the saturated region can be prevented and the drain current level in the saturated region is sufficiently high.

公开(公告)号：SG81187A1

公开(公告)日：2001-06-19

申请号：SG1996001939

申请日：1992-11-27

Applicant: SEIKO EPSON CORP

Inventor： MATSUO MUTSUMI ,  YUDASAKA ICHIO ,  KANAI KIYOHIKO ,  NAGASE KATSUMI ,  INOUE TAKASHI

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1335

Abstract: As shown in the figure, on a transparent substrate (209) provided with a matrix array, a black matrix (216) consisting of molybdenum silicide layers (216bb...) is present for each of picture element regions (201bb...). These molybdenum silicide layers (216bb) are insulated and separated from data lines (202a, 202b), gate lines (203a, 203b) and molybdenum silicide layers (216ab, 216ba...) disposed therearound on a boundary region with picture element regions disposed therearound, but, conductively connected to the picture element electrode (206) of the picture element region (201bb). Here, the outermost edges of the molybdenum silicide layer (216bb) and the corresponding outermost edges of the picture element electrode (206) coincide with each other.

公开(公告)号：DE60039744D1

公开(公告)日：2008-09-18

申请号：DE60039744

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： HIMODA TATSUYA ,  MIYASHITA SATORU ,  SEKI SHUNICHI ,  FURUSAWA MASAHIRO ,  YUDASAKA ICHIO ,  TAKEUCHI YASUMASA ,  MATSUKI YASUO

IPC: H01L21/208 ,  C01B33/02 ,  C30B7/00

Abstract: A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as in CVD methods.