公开(公告)号：DE2716545A1

公开(公告)日：1978-10-19

申请号：DE2716545

申请日：1977-04-14

Applicant: SIEMENS AG

Inventor： ANDRASCEK ERNST ,  GROEBER ALFRED ING GRAD ,  HAASE WOLFGANG ING GRAD ,  HACKE HANS-JUERGEN DIPL ING ,  HADERSBECK HANS ING GRAD ,  ZUKIER HUBERT

IPC: H05K3/34 ,  H05K3/40 ,  H05K3/46 ,  H05K7/06

公开(公告)号：DE3800918A1

公开(公告)日：1989-07-27

申请号：DE3800918

申请日：1988-01-14

Applicant: SIEMENS AG

Inventor： ANDRASCEK ERNST ,  HADERSBECK HANS

IPC: C23C18/31 ,  H05K3/24

Abstract: An aqueous bath for currentless deposition of tin is proposed, which contains at least: a) 4 to 6 parts by weight of thiourea b) 1 to 3 parts by weight of a tin (II) salt c) 1 to 3 parts by weight of citric acid d) 4 to 6 parts by weight of tartaric acid and e) 4 to 6 parts by weight of a nonionic surfactant based on polyglycol ether with about 8 to 16 ethylene units. The bath works already at room temperature and produces within 20 minutes an about 0.25 mu m thick, fine-crystalline tin layer of high quality on copper-containing metal surfaces. At 60@C, a tin layer thickness of >/=1.2 mu m is obtained within 20 minutes. The solution is clear already at room temperature, is stable for several weeks and produces neither toxic nor malodorous vapours.

公开(公告)号：DE2840972A1

公开(公告)日：1980-03-27

申请号：DE2840972

申请日：1978-09-20

Applicant: SIEMENS AG

Inventor： ANDRASCEK ERNST ,  HADERSBECK HANS ING GRAD ,  HACKE HANS-JUERGEN DIPL ING ,  FREITAG THEODOR DIPL PHYS

IPC: H01L23/08 ,  H01L21/56 ,  H01L23/24 ,  H01L23/31 ,  H01L23/42 ,  H01L23/28 ,  H01L23/48 ,  H01B17/66

Abstract: A simple and low-cost plastic encapsulation for semiconductor elements consisting of two plastic mouldings (7, 8) which are produced by pressing or injection and which are pressed together in a pressing device after being positioned accurately above and below the system carrier (5) holding the chip (6).

公开(公告)号：CH616277A5

公开(公告)日：1980-03-14

申请号：CH851377

申请日：1977-07-11

Applicant: SIEMENS AG

Inventor： ANDRASCEK ERNST ,  HADERSBECK HANS ,  HACKE HANS-JUERGEN ,  KULIGOWSKI GERD

IPC: G09F9/33 ,  H01L25/04 ,  H01L25/075 ,  H01L33/00 ,  G09F13/22

公开(公告)号：CH600734A5

公开(公告)日：1978-06-30

申请号：CH497276

申请日：1976-04-21

Applicant: SIEMENS AG

Inventor： HADERSBECK HANS ,  ANDRASCEK ERNST ,  GROEBER ALFRED

IPC: H01R12/04 ,  H05K1/11 ,  H05K3/30 ,  H05K3/32 ,  H05K3/34 ,  H05K3/40 ,  H05K1/04 ,  H05K3/36

Abstract: A flexible printed circuit board has conductors on opposite sides thereof which are through-contacted by die-punching the board to form an angularly-displaced tongue portion about which solder is flowed to contact both conductors. A terminal pin is optionally inserted through the board to connect a component, the pin being engaged by the angularly-displaced tongue to ensure reliable mechanical and electrical contact in the soldered joint. The through-contact is formed with a bevel-faced die in conjunction with a cutting plate.

公开(公告)号：DE1937508A1

公开(公告)日：1971-02-04

申请号：DE1937508

申请日：1969-07-23

Applicant: SIEMENS AG

Inventor： HADERSBECK HANS ,  ANDRASCEK ERNST ,  NAEGEL ELISABETH ,  GROEBER ALFRED

IPC: H05K1/16 ,  H05K3/00 ,  H05K3/10 ,  H05K3/18 ,  H05K3/20 ,  H05K3/40 ,  H05K3/44 ,  H05K3/46

Abstract: The insulated substrate is a thin film of material which can be crosslinked photochemically and has in it recesses for conductors and through it holes for connections formed photochemically by illuminating through a mash and subsequent processing. These receses and holes are then filled with electrically conductive material by electrochemical means. Such a substrate may be mounted on a support plate. Multilayer arrangements are covered using e.g. an Mo carrier with Cu plating. A photo negative varish, e.g. a polymerisable ester prod. of an epoxy resin, may be used as the photchem. crosslinked layer, and this can cover a mask which defines the pattern of conductors and through holes, which it covers.

公开(公告)号：AT55845T

公开(公告)日：1990-09-15

申请号：AT85110604

申请日：1985-08-23

Applicant: SIEMENS AG

Inventor： ANDRASCEK ERNST ,  HADERSBECK HANS ING GRAD

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/485

公开(公告)号：FI853602L

公开(公告)日：1986-03-21

申请号：FI853602

申请日：1985-09-19

Applicant: SIEMENS AG

Inventor： ANDRASCEK ERNST ,  HADERSBECK HANS

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H01L

Abstract: A method for producing a copper platform on integrated circuits formed on a semiconductor wafer wherein an aluminum layer is back-sputtered over the circuits to provide contact surfaces thereon, followed by sputtering on successive layers of titanium and copper on the aluminum layer. A copper platform is electrolytically built up above the aluminum layer and thereafter the copper layer is etched away. The copper platform is then metallized by electroless deposition, and finally the titanium layer is etched away.

公开(公告)号：CH628195A5

公开(公告)日：1982-02-15

申请号：CH213678

申请日：1978-02-28

Applicant: SIEMENS AG

Inventor： HADERSBECK HANS ,  ZUKIER HUBERT ,  ANDRASCEK ERNST ,  GROEBER ALFRED ,  HAASE WOLFGANG ,  HACKE HANS-JUERGEN

IPC: H05K3/34 ,  H05K3/40 ,  H05K3/46 ,  H05K7/06

公开(公告)号：DE2840973A1

公开(公告)日：1980-03-27

申请号：DE2840973

申请日：1978-09-20

Applicant: SIEMENS AG

Inventor： ANDRASCEK ERNST ,  HADERSBECK HANS ING GRAD ,  HACKE HANS-JUERGEN DIPL ING

IPC: H01L23/08 ,  H01L21/50 ,  H01L21/603 ,  H01L21/607 ,  H01L23/057 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L23/28 ,  H01C1/02 ,  H01L23/48