-
1.发明授权
公开(公告)号：US3588757A
公开(公告)日：1971-06-28
申请号：US3588757D
申请日：1968-10-10
Applicant: SIEMENS AG
Inventor： ANDRASCEK ERNST , ROSSHAUPTER ERICH
IPC: H01P3/08 , H01P3/13 , H05K1/02 , H05K1/05 , H05K1/14 , H05K3/42 , H05K3/44 , H03H7/10 , H01P3/00
CPC classification number: H01P3/081 , H01P3/13 , H05K1/0237 , H05K1/056 , H05K1/144 , H05K3/42 , H05K3/427 , H05K3/44 , H05K2201/0344 , H05K2201/0347 , H05K2201/037 , H05K2201/09554 , H05K2201/1006
Abstract: A MICROWAVE CIRCUIT EMPLOYING MULTIPLATE TECHNIQUE IN WHICH TWO PLATES OF DIELECTRIC MATERIAL EACH CARRY ON ONE SIDE THEREOF A CONTINUOUS METAL LAYER AND ON THE OTHER SIDE CONDUCTOR TRACKS FORMING MICROWAVE CIRCUIT ELEMENTS, WITH SUCH PLATES BEING SUPERIMPOSED WITH THEIR SIDES CARRYING SUCH CONDUCTOR TRACKS IN OPPOSED RELATION, AND COMPRESSION FORCES APPLIED THERETO, CHARACTERIZED BY THE DIELECTRIC BEING IN THE FORM OF A RELATIVELY THINC COATING ON ONE SIDE OF RESPECTIVE RELATIVELY THICK METAL PLATES AND THE CONDUCTOR TRACKS BEING DISPOSED THE OUTER FACE OF THE RESPECTIVE DIELECTRIC COATINGS, THE RESPECTIVE PLATES AND ASSOCIATED DIELECTRIC COATINGS HAVING PERFORATIONS EXTENDING THERETHROUGH, THE WALLS OF THE APERTURES BEING COATED WITH A METALLIT LAYER EXTENDING FROM SELECTED CONDUCTOR TRACKS TO THE ASSOCIATED METAL PLATE TO CONDUCTIVELY CONNECT THE SAME.
-
公开(公告)号：DE3047588A1
公开(公告)日：1982-07-22
申请号：DE3047588
申请日：1980-12-17
Applicant: SIEMENS AG
Inventor： ANDRASCEK ERNST , HADERSBECK HANS ING GRAD
Abstract: The etchant consists of an aq. soin. contg. Na 2CO3; potassium ferricyanide; potassium peroxydisulphate; tri-potassium citrate; and aluminium hydroxyacetate or sodium acetate. The pref. soln. uses 1 litre of water in which are dissolved 0.5-1120 g Na 2CO3;0.5-420 g potassium ferricyanide; 0.5-50 g potassium peroxydisulphate; 0.5-45 g tri-potassium citrate; and 0.01-2 g aluminium hydroxyacetate of sodium acetate. The etchant is pref. used to create thin film structures, the etching temp. being varied to increase the selectivity of the etchant. Used for mfr. of resistance- or RC- networks; liq. crystal displays; thin film microcircuits etc.
-
公开(公告)号：DE1814055A1
公开(公告)日：1970-06-25
申请号：DE1814055
申请日：1968-12-11
Applicant: SIEMENS AG
Inventor： HADERSBECK HANS , ANDRASCEK ERNST
Abstract: The carriers are used in printed circuits, through-contact printed wiring, thin and thick film circuits and the like. After the carrier has been given a precleaning it is dipped in at least one bath (activating bath) which serves as a supplier of strong ions. Afterwards, the carrier is immersed in a bath of colloidal solution acting in a known manner as a catalyst to the metal deposition. Activating bath contains strong dissociated salts, esp. phosphates, sulphates and fluorides of sodium and potassium.
-
公开(公告)号：DE3821231A1
公开(公告)日：1989-01-05
申请号：DE3821231
申请日：1988-06-23
Applicant: SIEMENS AG
Inventor： ANDRASCEK ERNST , HADERSBECK HANS
Abstract: The invention relates to a stripper solution for cured positive photoresists and to a process for the use thereof. The solution contains a) 20 to 80 per cent by volume of a lower water-soluble alcohol, b) 10 to 50 per cent by volume of one or more glycols or glycol ethers and c) deionised water in such a proportion that the total of the proportions a), b) and c) gives 100 per cent by volume, and also d) an addition of a basic alkali-free component or an acidic component in a proportion of 1 to 4 parts per thousand. In a bath filled with this stripper solution, even stressed positive photoresist layers can be detached, for example from semiconductor substrates, with ultrasonic assistance without problems and free of residue. Aluminium layers or polyimide layers located below the photoresist layer remain intact, and also there is no contamination.
-
公开(公告)号：FI853602A0
公开(公告)日：1985-09-19
申请号：FI853602
申请日：1985-09-19
Applicant: SIEMENS AG
Inventor： ANDRASCEK ERNST , HADERSBECK HANS
IPC: H01L21/60 , H01L23/48 , H01L23/485 , H01L
Abstract: A method for producing a copper platform on integrated circuits formed on a semiconductor wafer wherein an aluminum layer is back-sputtered over the circuits to provide contact surfaces thereon, followed by sputtering on successive layers of titanium and copper on the aluminum layer. A copper platform is electrolytically built up above the aluminum layer and thereafter the copper layer is etched away. The copper platform is then metallized by electroless deposition, and finally the titanium layer is etched away.
-
Patent Agency Ranking
公开(公告)号：CH603298A5
公开(公告)日：1978-08-15
申请号：CH422776
申请日：1976-04-05
Applicant: SIEMENS AG
Inventor： ANDRASCEK ERNST , HADERSBECK HANS
Abstract: 1484542 Cleaning and activating circuit boards for soldering SIEMENS A G 4 May 1976 [11 July 1975] 18120/76 Heading C7U [Also in Division B3] The solderability of electric circuit boards with Cu or Cu alloy conductor paths is improved by cleaning the boards in an aqueous solution containing a non ionic surfactant and an organic acid and then activating in an aqueous solution containing potassium peroxy disulphate (persulphate) and an acid. The preferred cleaning solution contains 20-100g/l of an hydroxyethylated alkyl phenol and 15-80g/l of an organic acid such as formic acid. The activating solution is preferably saturated with the potassium peroxydisulphate the pH adjusted to 2-4 with H 2 SO 4 and stabilized with phosphoric acid. The boards may be rinsed with water between treatments and also retreated in the cleaning solution after treating in the activating solution. Colophony or soldering lacquers may then be applied and dried.
-
公开(公告)号：DE1591581A1
公开(公告)日：1970-02-12
申请号：DE1591581
申请日：1967-10-12
Applicant: SIEMENS AG
Inventor： ANDRASCEK ERNST , ROSSHAUPTER ERICH
-
公开(公告)号：DE3579282D1
公开(公告)日：1990-09-27
申请号：DE3579282
申请日：1985-08-23
Applicant: SIEMENS AG
Inventor： ANDRASCEK ERNST , HADERSBECK HANS ING GRAD
IPC: H01L21/60 , H01L23/48 , H01L23/485
Abstract: A method for producing a copper platform on integrated circuits formed on a semiconductor wafer wherein an aluminum layer is back-sputtered over the circuits to provide contact surfaces thereon, followed by sputtering on successive layers of titanium and copper on the aluminum layer. A copper platform is electrolytically built up above the aluminum layer and thereafter the copper layer is etched away. The copper platform is then metallized by electroless deposition, and finally the titanium layer is etched away.
-
公开(公告)号：DE3237394A1
公开(公告)日：1984-04-12
申请号：DE3237394
申请日：1982-10-08
Applicant: SIEMENS AG
Abstract: A chemical gilding bath is formulated on the basis of an alkaline, aqueous solution of an alkali gold cyanide complex and has a reducing agent and a stabilizing agent therein. The reducing agent is an organic compound containing at least one enol group within the molecular structure thereof, such as ascorbic acid or salts thereof. The pH value of the bath is adjusted by a buffer solution so as to range between about 7.5 to 12 and preferably is about 8.
-
公开(公告)号：DE2940769A1
公开(公告)日：1981-04-16
申请号：DE2940769
申请日：1979-10-08
Applicant: SIEMENS AG
Abstract: Light emitting diodes, consisting of a light emitting chip, a metal system carrier with two terminals, and an encapsulation are contacted by a process involving surface metallisation. The light emission takes place at the chip side surfaces, orthogonal to the pn - junction surface. Both chip main surfaces are completely metallised. The system carrier has shanks, forming an anode (5) and a cathode (1), between which the metallised chip is inserted. The resilience of the shanks provides the holding pressure. Then the assembled component is provided with a known encapsulation. Subsequently the contact is preferably finallised by adhesion, soldering, or welding (2). The system carrier may be comb-shaped and may be fitted with fastening sockets.
-
-
-
-
-
-
-
-
-
Search Results
25
records
(took 0.021 seconds)
