公开(公告)号：US3607110A

公开(公告)日：1971-09-21

申请号：US3607110D

申请日：1968-03-11

Applicant: SIEMENS AG

Inventor： HAAS ERNST ,  MARTIN JOACHIM ,  REUSCHEL KONRAD ,  SCHINK NORBERT ,  VOGEL CARL-HEINZ

IPC: C30B13/00 ,  B01J17/10

CPC classification number: C30B29/06 ,  C30B13/00 ,  Y10S117/90 ,  Y10T117/1076

Abstract: Apparatus comprising means for capturing carbon-containing vapor emanating from carbon-containing substances in the high vacuum environment and in the equipment for producing the high vacuum in the environment, and adsorbent means for adsorbing the carboncontaining vapor.

公开(公告)号：IT8323583D0

公开(公告)日：1983-11-04

申请号：IT2358383

申请日：1983-11-04

Applicant: SIEMENS AG

Inventor： DIETZE WOLFGANG ,  FENZL HANS JURGEN ,  REUSCHEL KONRAD ,  SCHAFER JURGEN

IPC: C01B33/02 ,  C01B33/025 ,  H01L31/04

公开(公告)号：CA1072423A

公开(公告)日：1980-02-26

申请号：CA320602

申请日：1979-01-31

Applicant: SIEMENS AG

Inventor： MARTIN JOACHIM ,  HAAS ERNST ,  REUSCHEL KONRAD ,  SCHNOELLER MANFRED

IPC: B01J17/36

Abstract: A process for the production of substantially homogeneously doped p-conductive semiconductor material is described, which comprises subjecting the semiconductor material to be doped to irradiation with .gamma.-photons wherein the semiconductor material is gallium and wherein zinc atoms are produced as doping atoms on irradiation of the gallium with .gamma.-photons.

公开(公告)号：CA1068583A

公开(公告)日：1979-12-24

申请号：CA233055

申请日：1975-08-07

Applicant: SIEMENS AG

Inventor： MARTIN JOACHIM ,  HAAS ERNST ,  REUSCHEL KONRAD ,  SCHNOELLER MANFRED

IPC: G21G1/12 ,  C30B31/20 ,  G21H5/00 ,  H01L21/261 ,  B01J17/34

Abstract: A process for the production of substantially homogeneously doped p-conductive semiconductor material is described, which comprises subjecting the semiconductor material to be doped to irradiation with .gamma.-photons wherein the semiconductor material is silicon and wherein aluminum atoms are produced as doping atoms on irradiation of the silicon with .gamma.-photons.

公开(公告)号：CA1045523A

公开(公告)日：1979-01-02

申请号：CA213350

申请日：1974-11-08

Applicant: SIEMENS AG

Inventor： HAAS ERNST ,  MARTIN JOACHIM ,  REUSCHEL KONRAD ,  SCHNOELLER MANFRED

IPC: C30B13/10 ,  C30B13/00 ,  C30B29/06 ,  C30B31/20 ,  C30B31/22 ,  H01L21/261 ,  B01J17/40

Abstract: A method for producing homogeneously doped silicon monocrystals, with n-conductivity, by neutron irradiation, wherein, after zone-melting in a vacuum and conversion of the polycrystalline rod into the monocrystalline form, the remaining conductivity of the rod is determined , the said rod being then exposed to controlled irradiation with thermal neutrons, based on the conductivity measurement carried out, for the purpose of obtaining the desired n-conductivity.

公开(公告)号：CA954423A

公开(公告)日：1974-09-10

申请号：CA104967

申请日：1971-02-10

Applicant: SIEMENS AG

Inventor： KELLER WOLFGANG ,  REUSCHEL KONRAD ,  SPORRER LUDWIG ,  STUT HANS

IPC: C30B13/28 ,  B01J17/10

公开(公告)号：CA940019A

公开(公告)日：1974-01-15

申请号：CA117081

申请日：1971-06-30

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD ,  SANDMANN HERBERT ,  SCHINK NORBERT

IPC: C30B25/02

公开(公告)号：CA877585A

公开(公告)日：1971-08-03

申请号：CA877585D

Applicant: SIEMENS AG

Inventor： KELLER WOLFGANG ,  REUSCHEL KONRAD ,  KERSTING ARNO

公开(公告)号：CA854395A

公开(公告)日：1970-10-20

申请号：CA854395D

Applicant: SIEMENS AG

Inventor： RAITHEL KURT ,  KELLER WOLFGANG ,  REUSCHEL KONRAD

公开(公告)号：CA700477A

公开(公告)日：1964-12-22

申请号：CA700477D

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD