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    PROCESS FOR USING CONTAMINATED METAL PARTS
    2.
    发明申请
    PROCESS FOR USING CONTAMINATED METAL PARTS 审中-公开
    使用污染金属零件的工艺

    公开(公告)号：WO9722975A3

    公开(公告)日：1997-08-14

    申请号：PCT/DE9602309

    申请日：1996-12-02

    Applicant: SIEMENS AG ,  HAAS ERNST ,  NEUDERT NIKOLAUS ,  HOFMANN ROLAND

    Inventor： HAAS ERNST ,  NEUDERT NIKOLAUS ,  HOFMANN ROLAND

    IPC: C21C5/36 ,  C22B7/00 ,  C22B7/04 ,  G21F9/30 ,  G21F9/00

    CPC classification number: G21F9/30 ,  C21C5/36 ,  C22B7/001 ,  C22B7/04 ,  Y02P10/214

    Abstract: The invention relates to a process for using metal parts which are radioactively contaminated during which the metal parts are melted down. A slag former is added thereby forming a liquid melt and a slag. The slag is subsequently separated from the melt. This process is characterized in that after separation of the slag the slag former is added to the melt again as long as it is still liquid and that the formed slag is once more separated from the melt.

    Abstract translation: 本发明涉及一种使金属部件熔化的放射性污染的方法。 加入炉渣，从而形成液体熔体和炉渣。 炉渣随后与熔体分离。 该方法的特征在于，在分离炉渣之后，只要炉渣仍然是液体并且形成的炉渣再次与熔体分离，则将炉渣再添加到熔体中。

    3.
    发明专利
    未知

    公开(公告)号：DE59604702D1

    公开(公告)日：2000-04-20

    申请号：DE59604702

    申请日：1996-12-02

    Applicant: SIEMENS AG

    Inventor： HAAS ERNST ,  NEUDERT NIKOLAUS ,  HOFMANN ROLAND

    IPC: C22B7/00 ,  G21F9/00 ,  G21F9/30

    Abstract: A method for recycling metal parts contaminated by radioactive elements, in particular by alpha -emitters, includes forming a melt and a slag from the metal parts and then separating the slag from the melt. The radioactive elements are oxidized prior to the formation of the melt and the slag. For that purpose, the contaminated metal parts are exposed to an oxygen-containing atmosphere for a period at a temperature below the melting temperature of the metal parts.

    Homogeneous phosphorus doping of silicon using thermal neutrons - calculating dosage using reactor-specific constant to increase accuracy
    5.
    发明专利
    Homogeneous phosphorus doping of silicon using thermal neutrons - calculating dosage using reactor-specific constant to increase accuracy 未知

    公开(公告)号：DE2617320A1

    公开(公告)日：1977-11-03

    申请号：DE2617320

    申请日：1976-04-21

    Applicant: SIEMENS AG

    Inventor： SCHNOELLER MANFRED DIPL CHEM D ,  HAAS ERNST ,  BARTEL MONIKA

    IPC: C30B31/18 ,  H01L21/261 ,  B01J17/34 ,  B01J17/40

    Abstract: Prodn. of homogeneously P-doped Si crystals involves irradiation with thermal neutrons by the reaction 30Si (n,) the P doping level being determined by the prod. of the neutron flux density (PHI), irradiation time (t), a contant (d) depending on the effective neutron cross-section and the concn. (c) of 30Si in the starting material. To increase the accuracy in adjusting the doping, a reactor-specific effective corrected value (d') is used for the calculation of the neutron dosage, instead of the literature value for d. This value is dependent on the radiation position of the crystal in the reactor and hence on the proportion of effective neutrons in the neutron spectrum of the reactor. Used e.g. for doping a Si crystal with 3.50 x 1013 atoms P/cm3 (to give a resistivity of ca. 150 ohm-cm), with PHI =2 x 1013 neutrons/cm2-s, in a reactor for which d'=0.150 barn, it was found that t=125 min. Precise doping is possible for any reactor and any radiation position.

    Hollow semiconductor parts prodn. - by deposition from gas phase, providing getter coating and heating, preventing contamination
    8.
    发明专利
    Hollow semiconductor parts prodn. - by deposition from gas phase, providing getter coating and heating, preventing contamination 未知

    公开(公告)号：DE2355413A1

    公开(公告)日：1975-05-22

    申请号：DE2355413

    申请日：1973-11-06

    Applicant: SIEMENS AG

    Inventor： MARTIN JOACHIM ,  HAAS ERNST ,  BEUERLE MARGIT

    IPC: H01L21/22 ,  C30B31/10 ,  B01J17/02 ,  B01J17/34

    Abstract: In the prodn. of hollow semiconductor parts, esp. Si tubes, as used for diffusion and tempering processes, by deposition of semiconductor material (I) from the gas phase on the surface of a heated substrate and then removing the substrate, the part is provided with a coating of a gettering cpd. (II), on the inside and/or the outside, and then heated to a temp. at which there is no alloy formation of (I) with (II) but the gettering action occurs. (II) pref. consists of oxides of tri-, tetra- or penta-valent elements, esp. P2O5, B2O3 or V2O5. The (II) coating can be produced by deposition of the appropriate cpd. from the vapour phase or by brushing with a suspension of (II) in a solvent. The coating pref. is not >5 mu thick, whilst the coated part is heated to ca.1000 degrees C. and kept at this temp. for not 30 min. The (II) coating prevents contamination of (I) by th e material of heating coils and other foreign matter. Gas tight Si tubes with long life can be made.

    9.
    发明专利
    未知

    公开(公告)号：DE1619995A1

    公开(公告)日：1971-07-01

    申请号：DE1619995

    申请日：1967-03-11

    Applicant: SIEMENS AG

    Inventor： HAAS ERNST ,  MARTIN JOACHIM ,  REUSCHEL KONRAD DR ,  SCHINK NORBERT DR ,  VOGEL CARL-HEINZ DR RER NAT DR

    IPC: C30B13/00 ,  B01J17/10

    Abstract: 1,148,706. Treating silicon. SIEMENS A.G. 11 March, 1968 [11 March, 1967], No. 11832/68. Heading B1S A rod of silicon containing elemental carbon is zone-melted in a continuously evacuated chamber, carbon-containing compounds being continuously removed from the gas being withdrawn from the chamber. The carbon is thereby concentrated in one end of the rod and the carbon content of the main portion of the rod may be reduced from 38 to 11 pmm. Gas withdrawn from a chamber 2 may be passed over a condensing baffle 14 and through a diffusion pump 3, absorption trap 17 and a further pump 5. Alternatively (Fig. 2), the withdrawn gas may be passed through a gettering pump (21), using liquid titanium, and absorption pump (22), and a final pump. Movement within the chamber is effected by means of shafts passing through bushings 11- 13 lubricated with silicone grease, molybdenum disulphide, tungsten diselenide, or graphite.

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