公开(公告)号：SE0700172L

公开(公告)日：2008-07-26

申请号：SE0700172

申请日：2007-01-25

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  BAUER TOMAS

Abstract: A starting substrate in the form of a semiconductor wafer (1) has a first side and a second side, the sides being plane-parallel with respect to each other, and has a thickness rendering it suitable for processing without significant risk of being damaged, for the fabrication of combined analogue and digital designs, the wafer including at least two partitions (A1, A2; DIGITAL, ANALOGUE) electrically insulated from each other by insulating material (2; 38; 81; L) extending entirely through the wafer. A method for making such substrates including etching trenches in a wafer, and filling trenches with insulating material is also described.

公开(公告)号：AT511703T

公开(公告)日：2011-06-15

申请号：AT07709445

申请日：2007-01-31

Applicant: SILEX MICROSYSTEMS AB

Inventor： KAELVESTEN EDVARD ,  BAUER TOMAS ,  EBEFORS THORBJOERN

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/522

Abstract: The invention relates to a method of making a starting substrate wafer for semiconductor engineering having electrical wafer through connections (140; 192). It comprises providing a wafer (110; 150) having a front side and a back side and having a base of low resistivity silicon and a layer of high resistivity material on the front side. On the wafer there are islands of low resistivity material in the layer of high resistivity material. The islands are in contact with the silicon base material. Trenches are etched from the back side of the wafer but not all the way through the wafer to provide insulating enclosures defining the wafer through connections (140; 192). The trenches are filled with insulating material. Then the front side of the wafer is grinded to expose the insulating material to create the wafer through connections. Also there is provided a wafer substrate for making integrated electronic circuits and/or components, comprising a low resistivity silicon base (110) having a high resistivity top layer (122) suitable for semiconductor engineering, characterized by having low resistivity wafer through connections (140).

公开(公告)号：SE1150413A1

公开(公告)日：2011-05-10

申请号：SE1150413

申请日：2008-11-19

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  BAUER TOMAS

IPC: B81B7/00 ,  B81C1/00 ,  H01L21/50 ,  H01L23/48

公开(公告)号：SE533308C2

公开(公告)日：2010-08-24

申请号：SE0801620

申请日：2007-01-31

Applicant: SILEX MICROSYSTEMS AB

Inventor： KAELVESTEN EDVARD ,  BAUER TOMAS ,  EBEFORS THORBJOERN

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L23/532

公开(公告)号：SE1050461A1

公开(公告)日：2010-05-10

申请号：SE1050461

申请日：2007-01-31

Applicant: SILEX MICROSYSTEMS AB

Inventor： KAELVESTEN EDVARD ,  BAUER TOMAS ,  EBEFORS THORBJOERN

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L23/532

Abstract: Uppfinningen avser an halvledaranordning innefattande ett dopat skivsubstråt (70) på eller i vilket det finns ett motsatt dopat skikt (72) anordnat, varvid en diodstruktur föreligger. Det finns också minst en via (76) som sträcker sig genom skivsubstratet. Vian står i elektrisk förbindelse med endera av skivsubstratet eller det motsatt dopade skiktet. En metod för att integrera en diod i en kiselskiva tillhandahålles också.(Fig. 4)