THREE DIMENSIONAL ALIGNMENT METHOD AND SYSTEM
    12.
    发明申请
    THREE DIMENSIONAL ALIGNMENT METHOD AND SYSTEM 审中-公开
    三维对齐方法与系统

    公开(公告)号:WO2003069389A1

    公开(公告)日:2003-08-21

    申请号:PCT/SE2003/000253

    申请日:2003-02-14

    CPC classification number: G02B6/4238 G02B6/4225 G02B6/4226 G02B6/4227

    Abstract: ABSTRACTA system for achieving fixation of one or more moveable micro machined platforms for passively aligned optical components, comprising - a support structure containing structures for passive alignment of optical components- platform(s) containing structures for passive alignment of optical components- actuators for actively aligning the already passively aligned components on the platform(s) and the support structure to each other, where the actuators are strong enough while actuating to keep the platform(s) steady during fixation and weak enough while not actuating so as not to impede the fixation- a fixation mechanism to fixate the moveable platform(s) to the support structure.

    Abstract translation: 用于实现用于被动对准的光学部件的一个或多个可移动微加工平台的固定的ABSTRACTA系统,包括:包含用于光学部件的被动对准的结构的支撑结构 - 包含用于光学部件的被动对准的结构的平台 - 用于主动对准已被动地 平台上的对准部件和支撑结构彼此相对,其中致动器足够坚固,同时致动以在固定期间保持平台稳定,并且在不致动的同时足够弱以便不妨碍固定 - 固定机构来固定可移动平台 到支撑结构。

    DEFLECTABLE MICROSTRUCTURE AND METHOD OF MANUFACTURING THE SAME THROUGH BONDING OF WAFERS
    13.
    发明申请
    DEFLECTABLE MICROSTRUCTURE AND METHOD OF MANUFACTURING THE SAME THROUGH BONDING OF WAFERS 审中-公开
    可忽略的微结构及其通过结合接合制造相同的方法

    公开(公告)号:WO2003068669A1

    公开(公告)日:2003-08-21

    申请号:PCT/SE2003/000252

    申请日:2003-02-14

    Abstract: The invention relates to a method of making a deflectable, free hanging micro structure comprising at least one hinge member, the method comprising the steps of providing a first sacrificial wafer comprising a single crystalline material constituting material forming the micro structure. A second semiconductor wafer comprising necessary components for forming the structure in cooperation with said first wafer is provided. Finite areas of a structured bonding material is provided, on one or both of said wafers at selected locations, said finite areas defining points of connection for joining said wafers. The wafers are bonded using heat and optionally pressure. Sacrificial material is etched away from said sacrificial wafer, patterning the top wafer by lithography is performed to define the desired deflectable microstructures having hinges, and subsequently silicon etch to make the structures.

    Abstract translation: 本发明涉及一种制造包括至少一个铰链构件的可偏转的自由悬挂微结构的方法,所述方法包括以下步骤:提供包括构成微结构的单晶材料构成材料的第一牺牲晶片。 提供了包括与所述第一晶片协作形成所述结构的必要部件的第二半导体晶片。 在选定位置的一个或两个所述晶片上提供结构化接合材料的有限区域,所述有限区域限定用于连接所述晶片的连接点。 使用热和任选的压力将晶片接合。 牺牲材料被蚀刻离开所述牺牲晶片,通过光刻来图案化顶部晶片以限定具有铰链的期望的可偏转微结构,并随后进行硅蚀刻以制造结构。

    PRESSURE SENSOR
    14.
    发明申请
    PRESSURE SENSOR 审中-公开
    压力传感器

    公开(公告)号:WO2003034016A1

    公开(公告)日:2003-04-24

    申请号:PCT/SE2002/001884

    申请日:2002-10-15

    Abstract: In manufacturing a pressure sensor a recess that will form part of the sensor cavity is formed in a lower silicon substrate. An SOI-wafer having a monocrystalline silicon layer on top of a substrate is bonded to the lower silicon substrate closing the recess and forming the cavity. The supporting substrate of the SOI-wafer is then etched away, the portion of the monocrystalline layer located above the recess forming the sensor diaphragm. The oxide layer of the SOI-wafer here acts as an "ideal" etch stop in the case where the substrate wafer is removed by dry (plasma) or wet etching using e.g. KOH. This is due to high etch selectivity between silicon and oxide for some etch processes and it results in a diaphragm having a very accurately defined and uniform thickness.The cavity is evacuated by forming a opening to the cavity and then sealing the cavity by closing the opening using LPCVD. Sensor paths for sensing the deflection of the diaphragm are applied on the outer or inner surface of the diaphragm. The monocrystalline diphragm gives the sensor a good long-term stability. Also the sensor path can be made of monocrystalline material, this giving the sensor even better good long-term characteristics. An increased sensitivity can be obtained by making active portions of the sensor paths freely extending, unsupported by other material of the pressure sensor, by suitable etching procedures.

    Abstract translation: 在制造压力传感器时,形成传感器腔的一部分的凹部形成在下硅衬底中。 在衬底顶部具有单晶硅层的SOI晶片被接合到下硅衬底上,封闭凹部并形成空腔。 然后蚀刻掉SOI晶片的支撑衬底,单晶层的部分位于形成传感器膜片的凹部之上。 SOI晶片的氧化物层在此通过干式(等离子体)或湿式蚀刻方式除去基板晶片的情况下,作为“理想的”蚀刻停止。 KOH。 这是由于在一些蚀刻工艺中硅和氧化物之间的高蚀刻选择性,并且其导致具有非常精确限定和均匀厚度的膜片。通过形成到空腔的开口然后通过闭合开口来密封空腔来抽空空腔 使用LPCVD。 用于感测隔膜偏转的传感器路径被施加在隔膜的外表面或内表面上。 单晶diphragm给传感器良好的长期稳定性。 此外,传感器路径也可以由单晶材料制成,这给传感器带来更好的长期特性。 传感器路径的有效部分通过适当的蚀刻程序自由延伸,不受压力传感器的其他材料支撑,可以获得增加的灵敏度。

    THIN CAPPING FOR MEMS DEVICES
    15.
    发明公开
    THIN CAPPING FOR MEMS DEVICES 审中-公开
    DÜNNERVERSCHLUSSFÜRMEMS-VORRICHTUNGEN

    公开(公告)号:EP3038974A1

    公开(公告)日:2016-07-06

    申请号:EP14839979.3

    申请日:2014-08-26

    Abstract: The invention relates to a device comprising a base substrate(700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from said component (702). It also comprises spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via said spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) comprises vias (710) comprising metal for providing electrical connection through said capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

    Abstract translation: 一种装置包括具有附接到其上的微组件(702)的基底(700)。 适当地,它设置有用于向组件(702)传导信号和从组件(702)传出信号的路由元件(704)。 它还包括间隔件(706),其也可以用作垂直路线信号的导电结构。 存在玻璃材料的覆盖结构(708),其设置在基底基板(700)上方,优选地通过共晶接合通过间隔件(706)接合,其中封盖结构(708)包括通孔(710),包括金属 用于通过封盖结构提供电连接。 通孔可以通过加压的冲压/压制方法制成,以使玻璃软化并施加压力至玻璃中的预定深度。 然而,其他方法是可能的,例如钻孔,蚀刻,爆破。

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