公开(公告)号：JPH11204885A

公开(公告)日：1999-07-30

申请号：JP256598

申请日：1998-01-08

Applicant: SONY CORP

Inventor： FUNATO KENJI ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI

IPC: C30B29/40 ,  H01L21/205 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of growing a nitride III-V group compound semiconductor layer and a method of manufacturing a semiconductor device. SOLUTION: When an in-free nitride III-V group compound semiconductor layer 13 is grown on a substrate 11 formed of material other than nitride III-V group compound semiconductor through a chemical vapor deposition method, the III-V ratio of deposition material is set at 8000 or above preferably 10,000 or above, more preferably 11,000 or above. When an In-containing nitride III-V group compound semiconductor layer 17 is grown on a substrate 11 formed of material other than nitride III-V group compound semiconductor through a chemical vapor deposition method, the V-III-ratio of deposition material is set at 10000 or above, preferably 13,000 or above, more preferably 14,000 or above.

公开(公告)号：JPH08181078A

公开(公告)日：1996-07-12

申请号：JP32071594

申请日：1994-12-22

Applicant: SONY CORP

Inventor： ASANO TAKEHARU ,  FUNATO KENJI

IPC: H01L21/205 ,  H01L33/28 ,  H01L33/40 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

Abstract: PURPOSE: To enable a MgTe II-VI compound semiconductor of high crystallinity to grow. CONSTITUTION: An MgTe II-VI compound semiconductor 2 composed of two or more II elements selected out of Zn, Cd, and Mg including Mg and one or more VI elements selected out of Te, Se, and S including Te is grown on a semiconductor substrate 1 through an organic metal chemical vapor growth method, wherein diethyl tellurium is used as Te material, and an MgTe II-VI compound semiconductor is grown at a growth temperature Tg, 350 deg.C

公开(公告)号：JPH0897500A

公开(公告)日：1996-04-12

申请号：JP23260794

申请日：1994-09-28

Applicant: SONY CORP

Inventor： FUNATO KENJI ,  ASANO TAKEHARU

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01S3/18

Abstract: PURPOSE: To provide a light emitting device whose manufacturing process can be simplified and which is highly reliable and a laser CRT employing the light emitting device. CONSTITUTION: A light emitting device 1 has an active layer made of AlGaInN system compound semiconductor and reflective layers 3 and 4 which are provided at least on one of the sides of the active layer 2 and are made of AlGaInN system compound semiconductor. In a laser CRT, an electron beam is applied to the light emitting device 1 as a target and a light having a required wavelength is applied to a screen to obtain a picture.

公开(公告)号：JPH05335592A

公开(公告)日：1993-12-17

申请号：JP16424192

申请日：1992-05-29

Applicant: SONY CORP

Inventor： UGAJIN RYUICHI ,  FUNATO KENJI

IPC: H01L29/80 ,  H01L29/804

Abstract: PURPOSE:To improve modulation efficiency by providing a capacitor through a region surrounded by a channel having a double coupling structure connecting a pair of terminals and controlling a phase of electron wave passing through each path of the channel with a voltage difference between electrodes of the capacitor. CONSTITUTION:A circular loop channel 3 is provided to couple an emitter 1 and a collector 2 and a capacitor 4 forming a base is provided through the region surrounded by this channel 3. This capacitor 4 is formed by a couple of electrodes 4a, 4b and the surface thereof is provided perpendicularly to the surface of channel 3. Electron wave incident on the channel 3 from the emitter 1 is divided into two electron waves passing each path of the channel 3 and these electron waves are combined with the collector 2. Under this condition, the phase of each electron wave is controlled by a potential difference between the electrodes 4a, 4b of the capacitor 4 and phase interference of each electron wave at the collector 2 is controlled to realize transistor operation.

公开(公告)号：JPH05326929A

公开(公告)日：1993-12-10

申请号：JP15571892

申请日：1992-05-22

Applicant: SONY CORP

Inventor： FUNATO KENJI ,  TAIRA KENICHI ,  NAKAMURA FUMIHIKO

IPC: H01L29/06 ,  H01L29/68

Abstract: PURPOSE:To ensure the amplification effect even after micro-miniaturization by covering a base layer of the portion, where at least an emitter layer is not provided, with a protection film consisting of an insulator. CONSTITUTION:A mesa part is formed on an N-type GaSb substrate 1 on which a collector layer is formed and an N-type InAs layer 2 forming a base layer is formed on this mesa portion. An N-type GaSb layer 3 forming an emitter layer is then formed on this N-type InAs layer 2. These are all formed in the circular shape having planar surface. A ring type collector electrode 4 is formed on the circumference of the mesa part of the N-type GaSb substrate 1 through ohmic contact with the N-type GaSb substrate 1. Moreover, a circular base electrode 5 is formed on the N-type GaSb layer 3 through ohmic contact with the N-type GaSb layer 3. The portions not covered with the collector electrode 4 and emitter electrode 5 among the surfaces of the N-type GaSb substrate 1, N-type InAs layer 2 and N-type GaSb layer 3 are entirely covered with a resist film 6.

公开(公告)号：JPH05198890A

公开(公告)日：1993-08-06

申请号：JP3016992

申请日：1992-01-21

Applicant: SONY CORP

Inventor： FUNATO KENJI ,  TAIRA KENICHI ,  UGAJIN RYUICHI

IPC: H01S5/00 ,  H01S5/042

Abstract: PURPOSE:To realize a real space transition type light emitting element of high performance which is different from the conventional light emitting element in operation principle. CONSTITUTION:A pair of quantum well layers composed of I-type GaAs layers 3, 5 are adjacently arranged via a barrier layer composed of an I-type AlGaAs layer 4. Electrons are confined in one of a pair of the quantum well layers, thereby generating an excited state. Said electrons are made to oscillate between a pair of the quantum well layers, thereby inducing electric dipole moments. Hence light emission is realized.

公开(公告)号：JPH05198792A

公开(公告)日：1993-08-06

申请号：JP3253792

申请日：1992-01-23

Applicant: SONY CORP

Inventor： FUNATO KENJI ,  TAIRA KENICHI ,  NAKAMURA FUMIHIKO

IPC: H01L29/68

Abstract: PURPOSE:To make an operational speed of a hot electron transistor high, by optimizing the thickness of the collector barrier of the hot electron transistor. CONSTITUTION:In a hot electron transistor, when the thickness of a collector barrier is denoted by dC and its value at which the summation of a collector transit time and a collector charging time is made minimum is denoted by dC , the value of dC is so selected as to satisfy the relation of 0.6dC , and thereby, the thickness of the collector barrier is made optimum.

公开(公告)号：JPH04181776A

公开(公告)日：1992-06-29

申请号：JP31032090

申请日：1990-11-16

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  NAKAMURA FUMIHIKO ,  FUNATO KENJI ,  TAIRA KENICHI

IPC: H01L29/68 ,  H01L29/201 ,  H01L29/205

Abstract: PURPOSE:To simplify the separation between elements, reduce an parasitic capacity and increase speed by orderly forming an Ink-based collector, an InAs- based base and a GaAsDb-based or Ga-PSb-based emitter on an InP semiinsulation substrate. CONSTITUTION:On a semiinsulation substrate 1 of InP, sequentially formed are a subcollector 2A with n type high concentration of impurity of Ink, a collector 2 of InP of undope forming a collector barrier, a base 3 of n type InAs with the thickness not creating lattice relaxation due to lattice unconforming to a collector 2, an emitter 4 of GaAsSb or GaPSb of undope, and an emitter 4A of n type high concentration of impurities of GaAsSb or GaPSb or InP. And a collector electrode C, a base electrode B and an emitter electrode E are formed at the same time respectively on the portions exposed to the outside on the subcollector 2A, the base 3 and the high concentration emitter 4A respectively. By doing this, separation between elements can be made easier, parasitic capacity can be reduced and the speed can be increased.

公开(公告)号：JPH02260634A

公开(公告)日：1990-10-23

申请号：JP8265489

申请日：1989-03-31

Applicant: SONY CORP

Inventor： ISHIBASHI AKIRA ,  FUNATO KENJI ,  MORI YOSHIFUMI

IPC: H01L21/302 ,  H01L21/205 ,  H01L29/06 ,  H01L33/06 ,  H01L33/30

Abstract: PURPOSE:To easily form various dimensional super lattice including three dimension by a method wherein a substrate comprising the first material is irradiated with charged particle beams to form stepped parts while the second material layers are deposited in the recessions between the stepped parts. CONSTITUTION:When a resist material gas such as alkyl naphthalene is led into a chamber in high vacuum degree and then straight lines at parallel equidistance on a GaAs substrate 1 are irradiated with electron beams in fine diameter, a resist pattern 3 comprising amorphous hydrocarbon base material is formed. Then, a groove in rectangular section is formed by RIE process using the pattern 3 as a mask and then the mask is removed. Next, the surface is irradiated with electron beams in long focal distance likewise to form another resist pattern 4 on the stepped surface in the orthogonal direction to the groove and then the RIE process is performed using the mask 4 to form the three-layer stepped GaAs substrate on the surface and then the mask 4 is removed. Finally, the recessions between the stepped parts are filled up with AlAs layers 5; GaAs layers 6 are laminated; so that a GaAs/AlAs base three-dimentional super lattice may be completed by repeating the said processes in the required times.

公开(公告)号：JPH02156628A

公开(公告)日：1990-06-15

申请号：JP31173788

申请日：1988-12-09

Applicant: SONY CORP

Inventor： ISHIBASHI AKIRA ,  FUNATO KENJI

IPC: C30B29/68 ,  H01L21/027 ,  H01L21/20 ,  H01L21/205 ,  H01L27/10 ,  H01L29/06 ,  H01L29/201 ,  H01S5/00 ,  H01S5/30

Abstract: PURPOSE:To form a pattern, at high resolving power, which is composed of an arbitrary substance in a three-dimensionally arbitrary place by a method wherein a substrate which has adsorbed a different raw material compound is irradiated selectively with a charged particle beam and a first pattern and a second pattern which are composed of different substances are formed. CONSTITUTION:A GaAs substrate 1 and the like are arranged inside a high- vacuum specimen chamber; a raw material gas such as trimetylarsenic (TMAs) or the like is introduced; a TMAs adsorption layer 2 is formed; in addition, a TMAs adsorption layer 3 is formed in the same manner. Then, when a charged particle beam 4 whose beam diameter can be made remarkably small is irradiated selectively, a TMAs molecule is decomposed; GaAs layers 5 of a checkerwise pattern whose size is nearly equal to that of the beam 4 can be formed. Then, an Al raw-material gas such as TMAs or the like is introduced; the same treatment is executed; AlAs layers 6 of a checkerwise pattern are formed between the layers 5; a fine two-dimensional pattern is formed; a three-dimensional pattern is also formed in the same manner; patterns composed of arbitrary substances can be formed three-dimensionally in arbitrary places at high resolving power.