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    1.
    发明专利
    未知

    公开(公告)号：DE60013039T2

    公开(公告)日：2005-09-08

    申请号：DE60013039

    申请日：2000-06-05

    Applicant: SONY CORP

    Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  NAKAJIMA HIROSHI

    IPC: H01L33/06 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer (10) is made of two or more semiconductor layers (10a, 10b) different in band gap, and a part (10a) of the p-type cladding layer (10) near one of its boundaries nearer to the active layer is made of a semiconductor layer having a larger band gap than that of the remainder part (10b). More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer (10) is made of a p-type Alx1Ga1-x1N layer (10a) in contact with a p- type GaN optical guide layer (9), and a p-type Alx2Ga1-x2N layer (10b) overlying the p-type Alx1Ga1-x1N layer (10a) (where 0≤x2

    2.
    发明专利
    未知

    公开(公告)号：DE60013039D1

    公开(公告)日：2004-09-23

    申请号：DE60013039

    申请日：2000-06-05

    Applicant: SONY CORP

    Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  NAKAJIMA HIROSHI

    IPC: H01L33/06 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer (10) is made of two or more semiconductor layers (10a, 10b) different in band gap, and a part (10a) of the p-type cladding layer (10) near one of its boundaries nearer to the active layer is made of a semiconductor layer having a larger band gap than that of the remainder part (10b). More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer (10) is made of a p-type Alx1Ga1-x1N layer (10a) in contact with a p- type GaN optical guide layer (9), and a p-type Alx2Ga1-x2N layer (10b) overlying the p-type Alx1Ga1-x1N layer (10a) (where 0≤x2

    Image forming apparatus
    4.
    发明专利
    Image forming apparatus 审中-公开
    图像形成装置

    公开(公告)号：JP2008008977A

    公开(公告)日：2008-01-17

    申请号：JP2006176903

    申请日：2006-06-27

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： HASHIMOTO SHIGEKI

    IPC: G02B27/48 ,  G02B26/08 ,  G03B21/00

    Abstract: PROBLEM TO BE SOLVED: To reduce speckles without lowering utilization efficiency of light in each wavelength band. SOLUTION: In an image projector that has a light source outputting light of different wavelengths and one-dimensional light modulator, there is arranged a light scattering element 20 in the one-dimensional intermediate image forming position of light by the light modulator. This light scattering element 20 is provided with diffraction gratings 20R, 20G, 20B corresponding to each wavelength of the light source, and is arranged in the manner that the image forming position of the one-dimensional intermediate image corresponding to each wavelength is shifted in the direction of the arrow x corresponding to the scanning direction of a scanning optical system. The diffraction angle for each wavelength is uniformized; thus, the lowering of the utilization efficiency of light is avoided. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：减少斑点而不降低每个波长带中的光的利用效率。 解决方案：在具有输出不同波长的光的光源和一维光调制器的图像投影仪中，通过光调制器在光的一维中间图像形成位置中布置有光散射元件20。 该光散射元件20设置有与光源的每个波长对应的衍射光栅20R，20G，20B，并且以与各波长对应的一维中间图像的图像形成位置在 与扫描光学系统的扫描方向对应的箭头x的方向。 每个波长的衍射角均匀化; 从而避免了光的利用效率的降低。 版权所有（C）2008，JPO＆INPIT

    Image projection apparatus
    5.
    发明专利
    Image projection apparatus 审中-公开
    图像投影设备

    公开(公告)号：JP2007226172A

    公开(公告)日：2007-09-06

    申请号：JP2006148423

    申请日：2006-05-29

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： HASHIMOTO SHIGEKI

    IPC: G03B21/00 ,  G02B26/08 ,  G02B26/12

    CPC classification number: G03B21/28

    Abstract: PROBLEM TO BE SOLVED: To display a horizontally long image with an excellent image quality. SOLUTION: An image projection apparatus is configured to scan a light beam, modulated by a one-dimensional spatial light modulating element, by a polygon scanner having four or five mirror facets in a direction that is substantially perpendicular to the length direction of the one-dimensional spatial light modulating element so as to display an image. Optical precision can be maintained and the light beam can efficiently be projected by using the polygon scanner having four or five mirror facets. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：显示具有优异图像质量的水平长的图像。 解决方案：图像投影装置被配置为通过具有四个或五个镜面的多边形扫描器扫描由一维空间光调制元件调制的光束，该多边形扫描器基本上垂直于 一维空间光调制元件以便显示图像。 可以通过使用具有四个或五个镜面的多边形扫描仪来保持光学精度并且可以有效地投射光束。 版权所有（C）2007，JPO＆INPIT

    METHOD OF GROWING SEMICONDUCTOR LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    6.
    发明专利
    METHOD OF GROWING SEMICONDUCTOR LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT 失效

    公开(公告)号：JP2002008980A

    公开(公告)日：2002-01-11

    申请号：JP2000182037

    申请日：2000-06-16

    Applicant: SONY CORP

    Inventor： NAKAJIMA HIROSHI ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI

    IPC: C30B29/40 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a method of growing a semiconductor layer, which suppresses the size of produced voids in the Pendeo growth method and also the inclination of the c-axis of the crystal in the semiconductor layer to reduce defects in this layer, and to provide a method of manufacturing semiconductor light-emitting elements using the same. SOLUTION: A first semiconductor layer 12b of a III-V compound, such as GaN, is projectedly formed on a substrate 11, and a second semiconductor layer 12 of a III-V compund, such as GaN, is grown in vapor phase on the first layer 12b surface at a higher growth rate Gb in a main surface inward direction of the substrate than the growth rate Ga in the vertical direction with respect to the main surface of the substrate with the pressure in a vapor phase growth reactor chamber being controlled, so that this pressure is higher than 400 Torrs, whereby the side S of the underside of the second semiconductor layer 12 makes an acute angle with its underside so that the side S forms a (11-22) plane, etc.

    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    7.
    发明专利
    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT 失效

    公开(公告)号：JP2001326385A

    公开(公告)日：2001-11-22

    申请号：JP2000148644

    申请日：2000-05-16

    Applicant: SONY CORP

    Inventor： HASHIMOTO SHIGEKI ,  NAKAJIMA HIROSHI ,  ASAZUMA YASUNORI

    IPC: H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-quality nitride III-V compound semiconductor light-emitting element, by which problem of nonuniformity in mixed crystal composition of a nitride III-V compound semiconductor layer is settled, especially for improved uniformity in mixed crystal, when indium is contained. SOLUTION: A manufacturing method of a semiconductor light-emitting element such as a laser diode is provided which comprises a process where, by an organic metal chemical vapor-phase growth method, the nitride III-V compound semiconductor layer containing indium and the like is crystal-grown and formed. Here, the flow velocity of material gas 34 containing ammonia gas and the like in a reactive tube 30 for crystal growth is set to 3-5 m/s while the pressure in the reactive tube is set to higher than a normal pressure, to form at least a part of the III-V compound semiconductor layer such as a light- emitting layer.

    METHOD OF MANUFACTURING NITRIDE III-V COMPOUND SEMICONDUCTOR AND SEMICONDUCTOR DEVICE
    8.
    发明专利
    METHOD OF MANUFACTURING NITRIDE III-V COMPOUND SEMICONDUCTOR AND SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JP2001144325A

    公开(公告)日：2001-05-25

    申请号：JP32330399

    申请日：1999-11-12

    Applicant: SONY CORP

    Inventor： HASHIMOTO SHIGEKI

    IPC: C30B25/02 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride III-V compound semiconductor, which is high in crystallinity and does not lack nitrogen, even if it is grown at a low temperature and a method of manufacturing a semiconductor device by the use of the same. SOLUTION: Material gas, which contains hydrazine or its substitution product or nitrogen-containing compound such as amine or azide as a nitrogen material, is fed to the reaction tube of an MOCVD device together with the carrier gas. These nitrogen-containing compounds have a higher decomposition efficiency than ammonia. Therefore, even if growth temperature is 900 deg.C or lower, when a MOCVD is carried out, a large amount of nitrogen material seeds conductive to the growth of a semiconductor layer can be supplied onto the growth surface (that is, on a base layer 23) of a substrate 21. Therefore, a nitride III-V compound semiconductor layer 24 can be improved in crystallinity. The supplied amount of nitrogen material can be reduced with respect to that of the V element material.

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