公开(公告)号：DE69231910T2

公开(公告)日：2002-04-04

申请号：DE69231910

申请日：1992-08-28

Applicant: SONY CORP

Inventor： KADOMURA SHINGO

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52

Abstract: A method of forming interconnectors involves the passivation (surface protective) of Al type interconnector patterns and connection hole surfaces without objectionable particle level problems. Under electrical discharge disassociation conditions, sulphur (S) is liberated and permits the formation of an anti-corrosive polythiazole in a plasma generated by using gaseous sulphur and nitrogen containing compounds. For example, in order to prevent the exposure of an Al type interconnector material layer to atmospheric air after it has been resist masked and etched, plasma CVD is used with a gas containing a mixture of S2F2/H2/N2, to form a protective film on the surfaces of the pattern. In this coated condition, after corrosion is prevented until such time as the next fabrication step which forms an interlayer insulation membrane is carried out. The protective film can be removed by heating the wafer to about 150 C at which time the protective film readily sublimes or decomposes. Other application come in that, after a natural oxide film is removed from a contact hole surface, until an upper interconnector is formed, the above mentioned protective film is temporarily formed over the exposed surfaces to prevent the reformation of the natural oxide film.

公开(公告)号：DE69229195T2

公开(公告)日：1999-11-18

申请号：DE69229195

申请日：1992-01-21

Applicant: SONY CORP

Inventor： TATSUMI TETSUYA ,  KADOMURA SHINGO ,  NAGAYAMA TETSUJI

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/321

公开(公告)号：DE69229749D1

公开(公告)日：1999-09-09

申请号：DE69229749

申请日：1992-10-28

Applicant: SONY CORP

Inventor： KADOMURA SHINGO ,  SATO JUNICHI

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812

公开(公告)号：DE69225190D1

公开(公告)日：1998-05-28

申请号：DE69225190

申请日：1992-10-28

Applicant: SONY CORP

Inventor： KADOMURA SHINGO ,  SATO JUNICHI

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812

公开(公告)号：JP2006086545A

公开(公告)日：2006-03-30

申请号：JP2005341658

申请日：2005-11-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TAGUCHI MITSURU ,  KADOMURA SHINGO ,  MIYATA KOJI

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/314 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To enable cleaning the bottom of a concave portion by hydrogen plasma without backing of the sidewall of the concave portion, by forming a protection film on the concave portion formed in an insulating film.
SOLUTION: A protection film 31 composed of a compound of nitrogen and carbon dissociated from low-permittivity organic films 17, 19 is formed on the sidewall of a concave portion 23 formed in an insulating film 16 having the organic insulating films (low-permittivity organic films 17, 19).
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：通过在凹部的侧壁上没有背衬的氢等离子体来清洁凹部的底部，通过在形成在绝缘膜上的凹部上形成保护膜。 解决方案：在具有有机绝缘膜的绝缘膜16中形成的凹部23的侧壁上形成由低介电常数有机膜17,19分解的氮和碳化合物构成的保护膜31（低 - 有机有机膜17,19）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2000183145A

公开(公告)日：2000-06-30

申请号：JP36018498

申请日：1998-12-18

Applicant: SONY CORP

Inventor： TAKATSU MEGUMI ,  HIRANO SHINSUKE ,  KADOMURA SHINGO

IPC: H01L21/683 ,  H01L21/324 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To obtain a wafer stage and a vacuum heat treatment apparatus capable of carrying out high temperature heat treatment of a wafer in a vacuum atmosphere. SOLUTION: This wafer stage comprises a holding base 11 made of a compound material of aluminum and a ceramic, a dielectric layer 13 made of a flame sprayed ceramic provided in a state covering the supporting surface of the holding base 11, a chuck electrode 15 provided within the dielectric layer 13, and temperature conditioning means 17 provided on the holding base 11. When the linear expansion coefficient of the compound material is a×10-6, the linear expansion coefficient of the flame sprayed ceramic is (a±3)×10-6, and when the linear expansion coefficient of the flame sprayed ceramics is b×10-6, the linear expansion coefficient of the chuck electrode 15 is (b±3)×10-6. A failure such as the breakdown of the dielectric layer 13 caused by the difference in the linear expansion coefficient between the dielectric layer 13 and the holding base 11 and between the layer 13 and the chuck electrode 15 can be prevented.

公开(公告)号：JP2000150647A

公开(公告)日：2000-05-30

申请号：JP32011598

申请日：1998-11-11

Applicant: SONY CORP

Inventor： KOMAI HISANORI ,  KADOMURA SHINGO ,  TAGUCHI MITSURU ,  YUBI HIROSHI ,  MIYAMOTO TAKAAKI

IPC: H01L21/3213 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To reduce contact resistance by connecting the lower part of a metallic material body and a lower wiring directly without a barrier metal layer. SOLUTION: This wiring structure is provided with a recessed part 13 (for example, a connection hole, a groove, or a connection hole formed in the groove and on the bottom of the groove), a barrier metal layer 14 formed on the side wall of the recessed part 13, and metallic material bodies 15 and 16 buried inside the recessed part 14 which are all connected onto a conductor 12 formed in an insulation film 11. In this case, the metallic material bodies 15 and 16 are made of metals which are buried plural times in the recessed part 13, and the metallic material body 15 and conductor 12 are connected with each other directly.

公开(公告)号：JP2000058520A

公开(公告)日：2000-02-25

申请号：JP23075298

申请日：1998-08-17

Applicant: SONY CORP

Inventor： KADOMURA SHINGO ,  TAKATSU MEGUMI ,  HIRANO SHINSUKE

IPC: H01L21/302 ,  H01L21/205 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a substrate mount stage which can avoid the occurrence of damages resulting from the difference in thermal expansion between materials, can sufficiently tolerate high temperatures, and can be manufactured easily. SOLUTION: A substrate mount stage is constituted of a composite material 11, has an electrostatic chucking function, and is provided with a temperature control means and the material 11 is composed of a base material 12 prepared by filling the texture of a ceramic member with an aluminum-based material and a ceramic layer 13 formed on the surface of the base material 12 by a melt-spraying method. The ceramic layer 13 is formed in a laminated body formed by laminating a second ceramic layer 130B upon a first ceramic layer 130A and an electrode 14 which makes the ceramic layer 13 exhibit an electrostatic chucking function is formed between the first and second ceramic layers 130A and 130B.

公开(公告)号：JPH11354504A

公开(公告)日：1999-12-24

申请号：JP15960798

申请日：1998-06-08

Applicant: SONY CORP

Inventor： HIRANO SHINSUKE ,  TAKATSU MEGUMI ,  KADOMURA SHINGO

IPC: H01L21/302 ,  C03C15/00 ,  C03C17/00 ,  C23C16/458 ,  H01L21/00 ,  H01L21/205 ,  H01L21/30 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a glass substrate processor for preventing the generation of a damage due to the difference of thermal expansion between materials, for sufficiently standing its use at a high temperature, for processing a glass substrate with a large area, and for operating the high temperature processing of the substrate. SOLUTION: One part (for example, glass substrate mount stage 10) of a glass substrate processor for processing a glass substrate is constituted of a composite material 11. Then, the composite material 11 is constituted of a base metal 12 in which aluminum based materials are packed in the tissue of a ceramic material and a ceramic layer 13 formed on the surface of the base metal 12 by a spraying method.

公开(公告)号：JPH10116822A

公开(公告)日：1998-05-06

申请号：JP29111096

申请日：1996-10-14

Applicant: SONY CORP

Inventor： KADOMURA SHINGO

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To etch, at high selection ratio, such gate electrode material as polycrystal Si and an SiO2 film, etc., with precision and good reproducibility, by controlling rapidly the temperature at the inside wall of an etching chamber. SOLUTION: A side wall of a diffusion chamber 1 in an etching device is connected to a gas coolant chiller 3 to supply such coolant gas as fleon, so that the side wall of the diffusion chamber 1 is rapidly cooled. On the surface of inside wall of the diffusion chamber 1, a ceramic chamber inside wall cover 17, of AlN, etc., with good thermal conductivity, which contains a heater is welded. At rapid cooling, the inside wall of the diffusion chamber 1 is cooled from a high temperature 50 deg.C or above to a low temperature 0 deg.C or below at drop speed 50 deg.C/min-100 deg.C/min, and at a rapid heating, that is heated from a low temperature 0 deg.C or below to a high temperature 50 deg.C or above at a rising speed 50 deg.C/min-300 deg.C/min.