中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

303 records (took 0.022 seconds)

    2.
    发明专利
    未知

    公开(公告)号：DE69331862T2

    公开(公告)日：2002-10-31

    申请号：DE69331862

    申请日：1993-02-11

    Applicant: SONY CORP

    Inventor： KADOMURA SHINGO

    IPC: H01L21/28 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/321

    Abstract: A dry etching method for performing one-stage anisotropic etching of a W-polycide film without using a CFC (chlorofluorocarbon) gas is disclosed. The W-polycide film on a substrate is etched by using sulfur halide such as S2Cl2 and S2Br2 for an etching gas while heating the substrate within a temperature range of up to 90 DEG C. Free S released from the sulfur halide is deposited on the substrate within the temperature range, thereby contributing to improvement of selectivity and anisotropy, and Cl* and Br* become etchants. Although WClx and WBrx, which are etching reaction products, have low vapor pressure at a normal temperature and under normal pressure, WClx and WBrx may be eliminated sufficiently under reduced pressure and heated conditions. Since F* is not formed in a plasma, no undercut is generated on an underlying polysilicon layer. Also, since C does not exist, particle pollution can be prevented and selectivity for a gate oxide film can be improved. If a nitrogen based compound, such as N2, is added to the sulfur halide, deposition of sulfur nitride based compounds can be expected, and the wafer heating temperature can be raised up to 130 DEG C.

    3.
    发明专利
    未知

    公开(公告)号：DE69228333D1

    公开(公告)日：1999-03-18

    申请号：DE69228333

    申请日：1992-05-26

    Applicant: SONY CORP

    Inventor： KADOMURA SHINGO

    IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/28

    Abstract: A dry etching method whereby an SiO2 layer and an Si3N4 layer may be etched with high selectivity for each other. As etching gas, such sulfur fluorides as S2F2 are used which, when dissociated by electric discharges, will form SFx as a main etchant for the SiO2 layer or F* as a main etchant for the Si3N4 layer and release sulfur in plasma. When the SiO2 layer is etched on the Si3N4 layer as an underlying layer via a resist mask, nitrogen atoms, removed from the underlying layer upon exposure thereof to plasma, will combine with sulfur in plasma to form on the exposed surface thereof such sulfur nitride compounds as polythiazyl (SN)x, which will, in turn, serve to achieve high selectivity for the underlying layer. The SiO2 layer can also be etched via an Si3N4 mask patterned into a predetermined shape, in which case sulfur nitride compounds formed on the Si3N4 mask will serve to achieve high selectivity therefor.

    4.
    发明专利
    未知

    公开(公告)号：DE69126149T2

    公开(公告)日：1998-01-02

    申请号：DE69126149

    申请日：1991-01-21

    Applicant: SONY CORP

    Inventor： TATSUMI TETSUYA ,  KADOMURA SHINGO

    IPC: H01L21/3213 ,  H01L21/308

    Abstract: Disclosed is a dry etching method by which a polycide film (5) consisting of a refractory metal silicide layer (4) and a polysilicon layer (3) are stacked one upon the other may be etched with high anisotropy, low pollution, high selectivity and high speed without using flon gases. According to the method of the present invention, an etching gas containing a fluorine base gas mixed at least with HBr is used for etching the polycide film for realizing anisotropic processing under sidewall protection by a reaction product of mainly the resist material and Br. Overetching for uniform processing in the wafer plane is performed with the use approximately solely of the fluorine base gas or HBr for realizing a high speed and improving substrate selectivity. The overetching step is preceded by oxygen plasma treatment for oxidizing the reaction product and intensifying side wall protective effects while improving anisotropy. Finally, the changes in the emission spectrum intensity during the etching are monitored for determining the end point of etching of the refractory metal silicide layer to enable more accurate setting of the etching conditions.

    5.
    发明专利
    未知

    公开(公告)号：DE69331862D1

    公开(公告)日：2002-06-06

    申请号：DE69331862

    申请日：1993-02-11

    Applicant: SONY CORP

    Inventor： KADOMURA SHINGO

    IPC: H01L21/28 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/321

    Abstract: A dry etching method for performing one-stage anisotropic etching of a W-polycide film without using a CFC (chlorofluorocarbon) gas is disclosed. The W-polycide film on a substrate is etched by using sulfur halide such as S2Cl2 and S2Br2 for an etching gas while heating the substrate within a temperature range of up to 90 DEG C. Free S released from the sulfur halide is deposited on the substrate within the temperature range, thereby contributing to improvement of selectivity and anisotropy, and Cl* and Br* become etchants. Although WClx and WBrx, which are etching reaction products, have low vapor pressure at a normal temperature and under normal pressure, WClx and WBrx may be eliminated sufficiently under reduced pressure and heated conditions. Since F* is not formed in a plasma, no undercut is generated on an underlying polysilicon layer. Also, since C does not exist, particle pollution can be prevented and selectivity for a gate oxide film can be improved. If a nitrogen based compound, such as N2, is added to the sulfur halide, deposition of sulfur nitride based compounds can be expected, and the wafer heating temperature can be raised up to 130 DEG C.

    6.
    发明专利
    未知

    公开(公告)号：DE69231910D1

    公开(公告)日：2001-08-09

    申请号：DE69231910

    申请日：1992-08-28

    Applicant: SONY CORP

    Inventor： KADOMURA SHINGO

    IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52

    Abstract: A method of forming interconnectors involves the passivation (surface protective) of Al type interconnector patterns and connection hole surfaces without objectionable particle level problems. Under electrical discharge disassociation conditions, sulphur (S) is liberated and permits the formation of an anti-corrosive polythiazole in a plasma generated by using gaseous sulphur and nitrogen containing compounds. For example, in order to prevent the exposure of an Al type interconnector material layer to atmospheric air after it has been resist masked and etched, plasma CVD is used with a gas containing a mixture of S2F2/H2/N2, to form a protective film on the surfaces of the pattern. In this coated condition, after corrosion is prevented until such time as the next fabrication step which forms an interlayer insulation membrane is carried out. The protective film can be removed by heating the wafer to about 150 C at which time the protective film readily sublimes or decomposes. Other application come in that, after a natural oxide film is removed from a contact hole surface, until an upper interconnector is formed, the above mentioned protective film is temporarily formed over the exposed surfaces to prevent the reformation of the natural oxide film.

    8.
    发明专利
    未知

    公开(公告)号：DE69228333T2

    公开(公告)日：1999-09-02

    申请号：DE69228333

    申请日：1992-05-26

    Applicant: SONY CORP

    Inventor： KADOMURA SHINGO

    IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/28

    Abstract: A dry etching method whereby an SiO2 layer and an Si3N4 layer may be etched with high selectivity for each other. As etching gas, such sulfur fluorides as S2F2 are used which, when dissociated by electric discharges, will form SFx as a main etchant for the SiO2 layer or F* as a main etchant for the Si3N4 layer and release sulfur in plasma. When the SiO2 layer is etched on the Si3N4 layer as an underlying layer via a resist mask, nitrogen atoms, removed from the underlying layer upon exposure thereof to plasma, will combine with sulfur in plasma to form on the exposed surface thereof such sulfur nitride compounds as polythiazyl (SN)x, which will, in turn, serve to achieve high selectivity for the underlying layer. The SiO2 layer can also be etched via an Si3N4 mask patterned into a predetermined shape, in which case sulfur nitride compounds formed on the Si3N4 mask will serve to achieve high selectivity therefor.

    10.
    发明专利
    未知

    公开(公告)号：DE69126149D1

    公开(公告)日：1997-06-26

    申请号：DE69126149

    申请日：1991-01-21

    Applicant: SONY CORP

    Inventor： TATSUMI TETSUYA ,  KADOMURA SHINGO

    IPC: H01L21/3213 ,  H01L21/308

    Abstract: Disclosed is a dry etching method by which a polycide film (5) consisting of a refractory metal silicide layer (4) and a polysilicon layer (3) are stacked one upon the other may be etched with high anisotropy, low pollution, high selectivity and high speed without using flon gases. According to the method of the present invention, an etching gas containing a fluorine base gas mixed at least with HBr is used for etching the polycide film for realizing anisotropic processing under sidewall protection by a reaction product of mainly the resist material and Br. Overetching for uniform processing in the wafer plane is performed with the use approximately solely of the fluorine base gas or HBr for realizing a high speed and improving substrate selectivity. The overetching step is preceded by oxygen plasma treatment for oxidizing the reaction product and intensifying side wall protective effects while improving anisotropy. Finally, the changes in the emission spectrum intensity during the etching are monitored for determining the end point of etching of the refractory metal silicide layer to enable more accurate setting of the etching conditions.

Patent Agency Ranking