公开(公告)号：JP2001075719A

公开(公告)日：2001-03-23

申请号：JP25458899

申请日：1999-09-08

Applicant: SONY CORP

Inventor： KAGAWA TAKAAKI

IPC: G06F3/042 ,  G06F3/03 ,  G06F3/041 ,  G06F3/048

Abstract: PROBLEM TO BE SOLVED: To obtain a display device which can plot on a touch panel with a feeling close to actual plotting on paper with a pen by making a plotting display at the contact place of a detected plotting member at a display part to the thickness corresponding to the thickness of the detected plotting member. SOLUTION: A plotting member thickness detecting means which detects the thickness of a touch panel in contact with the display part of the touch panel 2 is composed of a light emitting element 3 and a light receiving element 4. Namely, the light receiving element 4 functions as a light receiving means which detects how much light is cut off by a touch pen and the thickness of the touch pen is detected according to the result of light shielding detection by the light receiving element 4. Further, a display device I is equipped with a control means. The control means has as one control function a control function for making a plotting display at the contact place of the touch pen detected by a contact place detecting function of the touch panel 2 with the thickness corresponding to the thickness of the touch pen detected by the plotting member thickness detecting means.

公开(公告)号：JPH1051692A

公开(公告)日：1998-02-20

申请号：JP19861796

申请日：1996-07-29

Applicant: SONY CORP

Inventor： KAGAWA TAKAAKI

IPC: H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/353 ,  H04N5/3728 ,  H04N5/378

Abstract: PROBLEM TO BE SOLVED: To provide a solid-state image pickup device driving method capable of interpolating signals between pixels without a special circuit at the time of photographic a still object so as to obtain the image of a still image. SOLUTION: The driving method for a solid-state image pickup device 3 provided with a stolid-state image pickup element 31 and an image memory 35 storing a signal electric charge read from the element 31 as image information stored a signal electric charge 11 read by frame-reading from the element 31 as first image information 21 and stores a signal electric charge read by field-reading from a solid state image pickup element 31 in the memory 35 as second image information 22. Next a sheet of still picture if formed by using first and second image information 21 and 22 stored in the memory 35. Thereby, a part corresponding to a space between each pixel arranged on the vertically transferring direction of the element 31 ion first image information 21 is interpolated by second image information 22.

公开(公告)号：JP2545801B2

公开(公告)日：1996-10-23

申请号：JP15759586

申请日：1986-07-04

Applicant: SONY CORP

Inventor： HAMAZAKI MASAHARU ,  KAGAWA TAKAAKI ,  ISHIKAWA KIKUE ,  SUZUKI SATOYUKI ,  YONEMOTO KAZUYA

IPC: H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H04N5/335 ,  H04N5/341 ,  H04N5/3728

公开(公告)号：JP2508638B2

公开(公告)日：1996-06-19

申请号：JP12068886

申请日：1986-05-26

Applicant: SONY CORP

Inventor： YONEMOTO KAZUYA ,  HAMAZAKI MASAHARU ,  KAGAWA TAKAAKI ,  ISHIKAWA KIKUE ,  SUZUKI SATOYUKI

IPC: H01L27/148 ,  H01L27/14 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/351 ,  H04N5/357 ,  H04N5/3728

公开(公告)号：JPS62221147A

公开(公告)日：1987-09-29

申请号：JP6509886

申请日：1986-03-24

Applicant: SONY CORP

Inventor： KAGAWA TAKAAKI ,  YONEMOTO KAZUYA ,  ISHIKAWA KIKUE ,  HAMAZAKI MASAHARU ,  SUZUKI SATOYUKI ,  KANBE HIDEO

IPC: H01L27/148 ,  H04N5/335 ,  H04N5/359 ,  H04N5/372

Abstract: PURPOSE:To obtain a high quality sensed image effectively avoiding incidence of light into an unnecessary region without reducing sensitivity and the generation of smearing by coating a light intercepting layer on the side of the step of a transparent material layer formed on the periphery of a light receiving region. CONSTITUTION:A forward electrode 9 formed, e.g., on the extended end of a transfer electrode 10 and an insulation layer 8a has a step 15 on part of the periphery of the surface of a light receiving region 11 and on the side of the step 15, a light intercepting layer 14 of an Al evaporated film is formed simultaneously with the formation of, e.g., a light intercepting object 13 of the Al evaporated film. The light intercepting object 13 and the light intercepting layer 14 can be formed with the same material Al layer by evaporating Al on all the surface including the side of the above-mentioned step 15 on, e.g., a substrate 1 which has the forward electrode 9, etc., and by making a receiving light widow 14a by photo-etching. An insulation layer made of such as SiO2 is coated on the forward electrode 9.

公开(公告)号：JPH08166977A

公开(公告)日：1996-06-25

申请号：JP31013394

申请日：1994-12-14

Applicant: SONY CORP

Inventor： TAMAI SHINICHI ,  NAGAHARA IZURU ,  ARAI YASUAKI ,  KAGAWA TAKAAKI

IPC: H01L27/14 ,  G06F17/50 ,  H01L21/82 ,  H01L21/822 ,  H01L27/04

Abstract: PURPOSE: To provide a layout method whereby a chip is fully automatically generated, a development cost is remarkably reduced and a design period is extremely shortened. CONSTITUTION: At the time of the layout of a CCD imager, a template 1 having information concerning the definition of regularity in structure, a leaf cell 2 having information concerning the min. unit of structure and a personality file 3 having information concerning the repetition of structure including coordinate information to be reference are previously prepared at first. Then, the layout at each layer is generated by a core compiler 4 based on respective pieces of input information of those files and also the cells 5a-5c of the respective layers of a CCD core 5 and a bonding pad cell 6 are superimposed by a structure accumulator 7 based on coordinate information stored in the file 3. Then, an element separation well is generated in a well compiler 8 and a CCD core terminal is connected to a bonding pad by a route compiler 9.

公开(公告)号：JP2508507B2

公开(公告)日：1996-06-19

申请号：JP18040486

申请日：1986-07-31

Applicant: SONY CORP

Inventor： KAGAWA TAKAAKI ,  ISHIKAWA KIKUE ,  SUZUKI SATOYUKI ,  HAMAZAKI MASAHARU ,  YONEMOTO KAZUYA

IPC: H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

公开(公告)号：JPH07154699A

公开(公告)日：1995-06-16

申请号：JP21062594

申请日：1994-08-11

Applicant: SONY CORP

Inventor： SUZUKI JUNYA ,  KAGAWA TAKAAKI ,  YONEMOTO KAZUYA

IPC: H01L27/148 ,  H04N5/225 ,  H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3728

Abstract: PURPOSE:To set a shutter speed freely and continuously especially at a high speed shutter area in the solid-state electronic camera having the electronic shutter function. CONSTITUTION:The solid-state electronic camera having an electronic shutter function is provided with a solid-state image pickup element 21 having a means (4, 5) controlling the storage time of the signal charge in response to a reply and with an electronic shutter control means 26 and the control signal is fed also to the means 4 controlling the storage time within a horizontal blanking period and at the outside the vertical blanking period and fed to the means 4 controlling the storage time within the vertical banking period even at the outside of the blanking period.

公开(公告)号：JPS63296275A

公开(公告)日：1988-12-02

申请号：JP13092787

申请日：1987-05-27

Applicant: SONY CORP

Inventor： KAGAWA TAKAAKI ,  SUZUKI JUNYA ,  ISOBE MASAAKI

IPC: H01L27/148 ,  H01L21/339 ,  H01L27/14 ,  H01L29/76 ,  H01L29/762

Abstract: PURPOSE:To achieve uniform film thickness and hence improve a transfer efficiency by a method wherein, when 1st-3rd transfer electrodes which have respective insulating films on their surfaces are built up on a semiconductor substrate, the surface insulating films for isolation are applied every time the respective transfer electrodes are formed. CONSTITUTION:An insulating film 2 such as an SiN film is applied to the surface of an Si substrate 1 and 1st transfer electrodes 3 made of polycrystalline Si are formed on it with intervals and all the exposed surfaces of the electrodes 3 are covered with SiO2 insulating films 4a. Then 2nd transfer electrodes 5 made of polycrystalline Si are formed from the middle parts of the upper surfaces of the films 4a to the middle parts of the film 2 and the 1st electrodes 3 and the 2nd electrodes 5 are covered with SiO2 insulating films 4b. After that, a polycrystalline Si film 6 which is to be divided into 3rd electrodes are built up over the whole surface and, after apertures are drilled in the film 6 above the films 4b, an SiO2 insulating films 4c are applied to whole surface. With this constitution, the thicknesses of the insulating films for isolation between the transfer electrodes can be uniformized by forming the respective insulating films every time the respective electrodes are formed so that the degradation of charge transfer can be avoided.

公开(公告)号：JPS6314467A

公开(公告)日：1988-01-21

申请号：JP15759586

申请日：1986-07-04

Applicant: SONY CORP

Inventor： HAMAZAKI MASAHARU ,  KAGAWA TAKAAKI ,  ISHIKAWA KIKUE ,  SUZUKI SATOYUKI ,  YONEMOTO KAZUYA

IPC: H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H04N5/335 ,  H04N5/341 ,  H04N5/3728

Abstract: PURPOSE:To improve the transfer efficiency at the last stage of a vertical transfer register even if the vertical transfer register is minimized by forming the width of the last channel where the vertical transfer register is connected to a horizontal transfer register wider. CONSTITUTION:A plurality of photo detectors 1 arranged in horizontal and vertical directions, a plurality of vertical transfer registers 2 extended in the vertical direction and a horizontal transfer register 3 connected to the end of each vertical transfer register 2 are provided, and the last channel width W2 of the vertical transfer register 2 connected to the horizontal transfer register 3 is formed wider than the previous channel width W1. This avoids the proximity effect of photolithography at the time of channel formation especially in the case of a narrow width vertical transfer register and prevents the reduction of the channel width. Accordingly, the deterioration of the last transfer can be prevented even if the width of the vertical transfer register is made narrower. The fringing electric field at the time of transfer can also be made greater and the efficiency of transfer can be improved since the length of the last transfer electrode can be made shorter.