Organic el display and its drive circuit connection method
    11.
    发明专利
    Organic el display and its drive circuit connection method 审中-公开
    有机EL显示及其驱动电路连接方法

    公开(公告)号:JP2003017245A

    公开(公告)日:2003-01-17

    申请号:JP2001194242

    申请日:2001-06-27

    Inventor: KITO HIDEYOSHI

    CPC classification number: H01L27/3288

    Abstract: PROBLEM TO BE SOLVED: To connect a drive circuit for split-driving an organic display of a passive matrix drive type organic EL display and the display panel, without incurring thermal damage to the organic EL element. SOLUTION: An organic EL display panel 10 and a split-drive circuit 50 are positioned in place so that a connecting terminal 56 of the anode side of the split-drive circuit 50 may be jointed to the lead-out wiring 22 of the transparent anode electrode 14 side and a connecting terminal 58 of the cathode side may be jointed to the lead-out wiring 26 of the cathode electrode 16 side. The connecting terminals 56, 58 and the lead-out wirings 22, 26 are connected respectively by soldering. Since the soldering is performed at the position remote from an organic EL layer 18, the heat at the time of soldering is not conducted to the organic EL layer 18 directly and the thermal damage to the organic EL layer 18 is greatly reduced.

    Abstract translation: 要解决的问题:连接用于分离驱动无源矩阵驱动型有机EL显示器的有机显示器和显示面板的驱动电路,而不会对有机EL元件造成热损伤。 解决方案:将有机EL显示面板10和分割驱动电路50定位在适当位置,使得分离驱动电路50的阳极侧的连接端子56可以连接到透明阳极的引出布线22 电极14侧和阴极侧的连接端子58可以连接到阴极电极16侧的引出布线26。 连接端子56,58和引出布线22,26分别通过焊接连接。 由于在远离有机EL层18的位置进行焊接,因此不直接对有机EL层18进行焊接时的热量,对有机EL层18的热损伤大大降低。

    Organic electroluminescent element and its manufacturing method
    12.
    发明专利
    Organic electroluminescent element and its manufacturing method 审中-公开
    有机电致发光元件及其制造方法

    公开(公告)号:JP2003017244A

    公开(公告)日:2003-01-17

    申请号:JP2001204446

    申请日:2001-07-05

    CPC classification number: H01L51/5256

    Abstract: PROBLEM TO BE SOLVED: To provide an electroluminescent element that prevents deterioration by water or oxygen and is capable of improving reliability, and its manufacturing method.
    SOLUTION: The element part 10 on the substrate is covered by a barrier layer 20 at its surface. The barrier layer 20 seals the element part 10 and an organic layer P and an inorganic layer I are laminated alternately so as to shut off infiltration of water and oxygen. The inorganic layer I performs the function of mainly preventing transmission of water and oxygen and the organic layer P has sufficient elasticity and performs the function of suppressing stress by being provided between the inorganic layers I so that the inorganic layers I may not contact each other. When the barrier layer 20 is made multi-layered by thinning the thickness of one layer, the occurrence of cracks is prevented and the barrier performance is improved and flexibility for enduring deformation such as bending is provided. These organic layer P and inorganic layer I are formed by the vacuum dry process such as vacuum evaporation.
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题:提供一种防止水分或氧气劣化并且能够提高可靠性的电致发光元件及其制造方法。 解决方案:衬底上的元件部分10在其表面被阻挡层20覆盖。 阻挡层20密封元件部10,交替地层叠有机层P和无机层I,以切断水和氧的渗透。 无机层I具有主要防止水分和氧气透过的功能,有机层P具有足够的弹性,并且通过设置在无机层I之间而具有抑制应力的功能,使得无机层I彼此不接触。 当通过使一层的厚度变薄而使阻挡层20多层化时,防止了裂缝的发生,提高了阻隔性能,并提供了弯曲等持续变形的柔软性。 这些有机层P和无机层I通过真空蒸发等真空干燥法形成。

    ELECTROLESS PLATING DEVICE AND ELECTROLESS PLATING METHOD

    公开(公告)号:JP2002053972A

    公开(公告)日:2002-02-19

    申请号:JP2000236472

    申请日:2000-08-04

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To form a homogeneous plating film in electroless plating using a plating solution heated to a high temperature such as CoWP electroless plating by holding the temperature of the plating solution at a prescribed one and to perform the electroless plating with a plating solution of minimum quantity heated to a high temperature. SOLUTION: This device is provided with a plating bath vessel 11 to be charged with a plating solution 31, a heating source 12 provided on the plating bath vessel 11 and heating the plating bath vessel 11, a storing part 21 to be stored with the plating solution and a plating solution feeding part 22 feeding the plating solution 31 to the plating bath vessel 11 from the storing part 21. The plating solution feeding part 22 is provided with a heating part 23 heating the plating solution fed from the storing part 21.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:JP2002043315A

    公开(公告)日:2002-02-08

    申请号:JP2000224884

    申请日:2000-07-26

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To form a highly reliable copper wiring structure by forming a film having an excellent oxidation resistance and an excellent hydrofluoric acid resistance on the surface of a copper wiring layer, improving the oxidation resistance and hydrofluoric acid resistance of the copper wiring layer and reducing the connection between vias. SOLUTION: A copper wiring structure is provided with a layer (CoWP layer) 15 containing cobalt and a coating layer (CoSi2 layer) 16, which coats the CoWP layer 15 and has an oxidation resistance and a hydrofluoric acid resistance, and the layer 15 is formed on the surface of a copper wiring layer 14.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:JP2001338927A

    公开(公告)日:2001-12-07

    申请号:JP2000157544

    申请日:2000-05-29

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To solve problems of reliability such as an increase of wiring resistance, deterioration of electromigration characteristic or the like by insuring the adhesion of an oxidation preventing film consisting of a nitride film formed on a surface of a metal film after forming a groove wiring in the state that the metal film is left in a groove by an electrolytic polishing. SOLUTION: This method comprises a step of removing an excess metal film 22 on an insulating film 12 and leaving the metal film 22 in the state of burying a recessed part 13 after electrolytically polishing the metal film 22 that is buried in the recessed part 13 formed in the insulating film 12 and is formed on the insulating film 12, a step of removing an oxide film 16 produced in the surface of the metal film 22 burying the recessed part 13, and a step of film forming a metal oxidation preventing film 18 in the state of coating the metal film 22.

    METHOD AND APPARATUS FOR EVALUATING PERMEABILITY

    公开(公告)号:JP2002357533A

    公开(公告)日:2002-12-13

    申请号:JP2001164647

    申请日:2001-05-31

    Applicant: SONY CORP

    Inventor: KITO HIDEYOSHI

    Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for evaluating permeability capable of remarkably improving a measuring sensitivity in an evaluation of the permeability of a film. SOLUTION: The apparatus 10 for evaluating the permeability comprises a chamber 12 which is divided into a constant-temperature constant-humidity tank 14 and a vacuum tank 16 at a sample base 30 mounting a film 36 to be measured as a boundary. The tank 14 has a nitrogen atmosphere regulated to a predetermined humidity by a humidity regulating mechanism 40. The tank 16 is performed by evacuation into vacuum by an exhaust system to a vacuum state of 100 Pa or less. The base 30 is formed of a base 32 in which its water vapor permeability or the like is already known, in a disc-like shape, and a part except its substantially central part is covered with a water resistant protective film 34. Thus, only a component which passes through the film 36 to the tank 16 side, and detected by a mass spectrometer 58.

    ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE

    公开(公告)号:JP2002329583A

    公开(公告)日:2002-11-15

    申请号:JP2001135024

    申请日:2001-05-02

    Applicant: SONY CORP

    Inventor: KITO HIDEYOSHI

    Abstract: PROBLEM TO BE SOLVED: To provide an organic electro-luminescence display device which can display a high definition picture by enhancing contrast ratio. SOLUTION: An insulating layer 13 is composed of black material such as a 6-propicin fluoride vinylidene fluoride copolymer. Even if external light enters into the organic electro-luminescence display device in a bright place, most of external light is absorbed into the black insulating layer 13 before reaching an extraction electrode 17 for positive electrode or the like having a high a reflection function. Because the reflected light quantity released from the organic electro-luminescence display device is decreased, the contrast ratio of the display image is enhanced. Therefore, the high definition picture can be displayed.

    ELECTROPLATING EQUIPMENT AND METHOD

    公开(公告)号:JP2002146595A

    公开(公告)日:2002-05-22

    申请号:JP2000346260

    申请日:2000-11-14

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To enhance the film thickness of plating films and to improve the reliability of equipment by solving the problem that the film thickness of the plating film around a wafer tends to increase because electric fields are liable to concentrate near the points where electrodes are connected in a general electroplating method. SOLUTION: The AC impression electrode 17 is connected to the side opposite to the side of a substrate 51 where the plating films are deposited of the electroplating equipment 1 which forms the plating films on the substrate 51 by an electroplating method and this AC impression electrode 17 is provided with an AC power source 18 for impressing AC electric power to the electrode.

    SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

    公开(公告)号:JP2002118111A

    公开(公告)日:2002-04-19

    申请号:JP2000311465

    申请日:2000-10-12

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To inhibit the diffusion of copper on the interface between copper wiring and a cap film for increasing electromigration resistance, and to secure reliability in the copper wiring. SOLUTION: This semiconductor device has an insulating film 12 formed on a substrate 11, a recess 13 (for example, a groove) formed in the insulating film 12, a conductive layer 15 buried in the recess 13 via a barrier layer 14, and a cobalt tungsten phosphor covering 16 that is connected to the barrier layer 14 at the side of the conductive layer 15, and at the same time covers the conductive layer 15 at the opening side of the recess 13.

Patent Agency Ranking