公开(公告)号：JP2004044990A

公开(公告)日：2004-02-12

申请号：JP2002206328

申请日：2002-07-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KITO HIDEYOSHI

IPC: F28D15/02 ,  H01L23/427 ,  H05K7/20

CPC classification number: F28D15/0233 ,  F28D15/046 ,  F28F2245/02

Abstract: PROBLEM TO BE SOLVED: To provide a cooling device and a method of manufacturing an electronic device and the cooling device, capable of increasing the transporting amount of hydraulic fluid by improving the lyophilic characteristic of a channel surface with the hydraulic fluid, to increase the amount of vaporization heat in the device and to improve the heat efficiency. SOLUTION: In this cooling device 1, a hydrophilic film 18 made of hydrosilsesquioxane and the like is formed on a groove surface of a liquid-phase passage 12 of a first base 10 provided with a groove of the channel on its surface to circulate the hydraulic fluid, whereby the lyophilic characteristic of the groove surface with the hydraulic fluid is improved, the transporting amount of the hydraulic fluid can be increased, the amount of vaporization heat in the device can be increased, and the heat efficiency can be improved. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002110785A

公开(公告)日：2002-04-12

申请号：JP2000293361

申请日：2000-09-27

Applicant: SONY CORP

Inventor： KITO HIDEYOSHI

IPC: H01L23/522 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To realize an air wiring structure, having high reliability by preventing wiring from being broken due to stress during a thermal process applied by a filming process. SOLUTION: At least a part of an insulation layer formed between the wirings of multi-layer wiring or between wiring layers, or between the wirings (for instance, first wirings 17, 17 and second wirings 31, 31) and between the wiring layers (the first and second wirings 17, 31) is formed by substance films (a first chained polymer film 13, a second chained polymer film 23 and a third chained polymer film 26) which is gasified at 300 deg.C or higher, after the multi- layer wiring (first and second wirings 17, 31) is formed, and an air wiring structure is formed by gasifying and removing a part formed by substance films (first, second and third chained polymer films 13, 23, 26) gasified at 300 deg.C or lower by heating processing.

公开(公告)号：JP2001338924A

公开(公告)日：2001-12-07

申请号：JP2000157543

申请日：2000-05-29

Applicant: SONY CORP

Inventor： KOMAI HISANORI ,  NOGAMI TAKESHI ,  KITO HIDEYOSHI ,  TAGUCHI MITSURU

IPC: H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To improve the uniformity of a film thickness distribution of a metal plating layer when the metal plating layer in a substrate that has a diameter 200 mm or more is formed by means of electrolytic plating. SOLUTION: This method of manufacturing a semiconductor device comprises a step of forming a pattern 22 on a conductive film 21 so as to form a recessed part 26 in a first and a second insulating films 15, 18 after forming the conductive film 21 on the first and the second insulating films 15, 18 formed in a base body 10, a step of forming the recessed part (wiring groove 24) in the second insulating film 18 by etching using the conductive film 21 as a mask, a step of forming a plating seed layer 28 in the recessed part 26, and a step of forming the metal plating layer 29 so as to bury the recessed part 26 by means of the electrolytic plating.

公开(公告)号：JP2003064479A

公开(公告)日：2003-03-05

申请号：JP2001250962

申请日：2001-08-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KITO HIDEYOSHI ,  NOGAMI TAKESHI ,  TAGUCHI MITSURU ,  KOMAI HISANORI

IPC: C23C18/18 ,  C23C18/16 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To improve the selectivity of electroless plating by removing negative charge on the surface of an insulating film of a substrate.
SOLUTION: A pre-treatment of electroless plating for forming a plating film on the substrate 51 by electroless plating is carried out to remove negative charge on the surface of the substrate 51 by applying AC power from an AC power source 18 on the surface of the substrate 51 opposite from the surface on which the plating film of the substrate 51 is formed by dipping the substrate 51 into an electrolyte 41. As the pre-treatment, the negative charge on the surface of the substrate 51 may be removed by applying DC bias power while applying AC power or may be removed while applying pulse power.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：通过去除衬底的绝缘膜的表面上的负电荷来提高化学镀的选择性。 解决方案：通过无电解电镀在基板51上形成镀膜的无电镀的预处理是通过将交流电源18的交流电力施加在基板51的表面上来去除基板51的表面上的负电荷 通过将基板51浸渍到电解质41中而与其形成基板51的镀膜的表面相对的基板51.作为预处理，可以通过施加DC偏压来去除基板51的表面上的负电荷 同时施加交流电源或在施加脉冲功率时可以被去除。

公开(公告)号：JP2003059653A

公开(公告)日：2003-02-28

申请号：JP2001241802

申请日：2001-08-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KITO HIDEYOSHI

IPC: H05B33/10 ,  G09F9/00 ,  G09F9/30 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H05B33/06 ,  H05B33/14 ,  H05B33/22

CPC classification number: H01L51/529

Abstract: PROBLEM TO BE SOLVED: To remove thermal effect to the organic EL element at the time of electrical connection of the organic EL panel and the drive circuit.
SOLUTION: When the lead-out wiring 17, 18 leading to the electrodes 12, 15 of the organic electroluminescent element and the connecting terminals 23, 24 of the drive circuit are jointed, the substrate 11 on which an organic electroluminescent layer 14 is formed is cooled. Thereby, even if the joint generates heat, the heat transmitted to the organic electroluminescent layer 14 is reduced by the heat exchange of the cooling of the substrate 11.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：为了在有机EL面板和驱动电路的电连接时去除对有机EL元件的热效应。 解决方案：当通向有机电致发光元件的电极12,15的引出布线17,18和驱动电路的连接端子23,24接合时，形成有机电致发光层14的基板11是 冷却。 因此，即使关节产生热量，通过基板11的冷却的热交换也减少了传递到有机电致发光层14的热量。

公开(公告)号：JP2002110640A

公开(公告)日：2002-04-12

申请号：JP2000293359

申请日：2000-09-27

Applicant: SONY CORP

Inventor： KITO HIDEYOSHI

IPC: H05H1/46 ,  C23C16/52 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To simplify management of plasma treatment by providing a method for checking surface change state of copper after plasma treatment, in-plane uniformity of plasma treatment, etc., using a simple method. SOLUTION: In a manufacturing method of a semiconductor device with a plasma treatment process of a wafer for forming a semiconductor device, a wafer in which an organic film is formed is regularly subjected to plasma treatment by S2 (plasma treatment of an organic film) and the plasma treatment state is checked.

公开(公告)号：JP2002043415A

公开(公告)日：2002-02-08

申请号：JP2000218803

申请日：2000-07-19

Applicant: SONY CORP

Inventor： KITO HIDEYOSHI

IPC: H01L21/768 ,  H01L21/312 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable interlayer dielectric structure by preventing a trench in the high aspect ratio from being formed on an insulating film on the side of a wiring when a contact hole is formed deviating from the wiring by a slip or the like generated in positioning the contact hole in a step of lithography. SOLUTION: A first wiring 13 formed on a substrate 10 and a first insulating film 14 composed of a low dielectric constant film which is formed in thickness less than the height of the first wiring 13 on the substrate 10 on the side of the first wiring 13. A second insulating film 15 covers the first wiring 13 and is formed on the first insulating film 14 using a material whose selective ratio with the first insulating film is 5 or more. Then, a contact hole 16 is formed in the second insulating film 15 and leads to the first wiring 13.

公开(公告)号：JP2000195852A

公开(公告)日：2000-07-14

申请号：JP36897798

申请日：1998-12-25

Applicant: SONY CORP

Inventor： KITO HIDEYOSHI

IPC: H01L21/768 ,  H01L21/31 ,  H01L21/312 ,  H01L21/47 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To obtain an interlayer insulating film which is low in relative permittivity and has desired heat insulation property by making the insulating film of a semiconductor device, consisting of a polymer which has a principal chain of mesh structure which includes the obtained condensed ring polymerizing a polycyclic compound having at least one substituent. SOLUTION: An interlayer insulating film 12 consisting, for example of, a silicon oxide film is made on a substrate 11, and an insulating film 13 consisting of a polymer having mesh structure of a principal chain which includes a condensed ring is made on this interlayer insulating film 12. That is, the insulating film 13 consists of a polymer, where condensed rings of at least one or more kinds from among naphthalene, anthracene, naphthacene, chrysene, pentane, or the like are introduced into the principal chains within the film structure. This polymer consists of one, where a polycyclic compound is polymerized, and the polycyclic compound may be one which has at least one substituent such as an alkyl group, alkoxyl group, hydroxyl group, amino group, carboxyl group, vinyl group, or the like.

公开(公告)号：JP2006040739A

公开(公告)日：2006-02-09

申请号：JP2004219583

申请日：2004-07-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KITO HIDEYOSHI ,  SAITO ICHIRO

IPC: H01J9/02

Abstract: PROBLEM TO BE SOLVED: To provide a method capable of manufacturing electron emitting elements with high reliability without causing disorder like generation of leak current or exfoliation of a film. SOLUTION: The electron emitting element is manufactured through a first process forming a cathode electrode and an emitter layer 4 on a cathode substrate 1, a second process forming an insulation layer, a gate electrode, and gate holes 12 on a supporting substrate 5 different from the cathode substrate 1, and a third process sticking the supporting substrate 5 on the cathode substrate 1 in a state of positioning the gate holes 12 on the emitter layer 4. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够以高可靠性制造电子发射元件的方法，而不会产生诸如产生漏电流或膜的剥离的障碍。 解决方案：通过在阴极基板1上形成阴极电极和发射极层4的第一工艺，在支撑基板上形成绝缘层的第二工艺，栅极电极和栅极孔12来制造电子发射元件 5和不同于阴极基板1的第五工序，以及在将栅极孔12定位在发射极层4上的状态下将支撑基板5粘贴在阴极基板1上的第三工序。（C）2006，JPO＆NCIPI

公开(公告)号：JP2004103406A

公开(公告)日：2004-04-02

申请号：JP2002263965

申请日：2002-09-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KITO HIDEYOSHI

IPC: H05B33/10 ,  C23C14/28 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide a device and a method for forming a thin film pattern, capable of corresponding to various materials, and capable of enlarging a screen size and utilizing flexibility.
SOLUTION: A substrate 15 to be filmed, which serves as an object for vapor deposition, is arranged above a heating substrate 13 with a prescribed space kept between them. A plurality of bridge parts 18A on a CLV 18 are irradiated with a rectangular energy beam from a laser 17. In the GLV 18, a voltage is selectively applied to a part of the bridge parts 18A in response to the film pattern to deform the selected bridge parts 18A, and thereby, the irradiated energy beam is controlled to be diffracted. The controlled energy beam is made to irradiate the rear surface of the heating substrate 13 by a reflecting mirror 19, and a vapor deposition material 14 on the surface of the heating substrate 13 is evaporated locally. Thereby, a thin film pattern 16 with high definition is formed on the substrate 15 to be filmed.
COPYRIGHT: (C)2004,JPO