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公开(公告)号：CA1101085A
公开(公告)日：1981-05-12
申请号：CA295256
申请日：1978-01-19
Applicant: SONY CORP
Inventor： MURAKAMI YOSHIKAZU , KOMATSU YASUTOSHI
Abstract: An integrated microwave oscillator having an active element for oscillation which is provided with first, second and third terminals, micro-strip lines which are connected to said first, second and third terminals, respectively, and form a feedback circuit, and a dielectric resonator which coupled to one of the above micro-strip lines which is not used as an output terminal at a predetermined position. There is disclosed another integrated microwave oscillator which includes an active element for oscillation which has first, second and third terminals, micro-strip lines which is connected to said first and third terminals, a micro-strip line which is connected between said first and third terminals to form a feedback circuit together with said first-mentioned micro-strip lines, and a dielectric resonator which coupled to one of said micro-strip lines which is not used as an output terminal at a predetermined position.
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公开(公告)号：DE19804568B4
公开(公告)日：2009-03-19
申请号：DE19804568
申请日：1998-02-05
Applicant: SONY CORP
Inventor： KOMATSU YASUTOSHI , HAYASHI YUTAKA
IPC: H01L27/06 , H01L29/78 , H01L21/336 , H01L21/84 , H01L23/58 , H01L27/02 , H01L27/12 , H01L29/10 , H01L29/786 , H03K17/687
Abstract: An insulated-gate field effect transistor comprising a channel forming region, source/drain regions, a gate region, a bias supplying means, and a capacitive element, wherein a potential for controlling a gate threshold voltage of the insulated-gate field effect transistor in an off-state thereof is applied to the channel forming region through the bias supplying means, and a signal having approximately the same phase as a phase of a signal supplied to the gate region is supplied to the channel forming region through the capacitive element.
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公开(公告)号：CA1241075A
公开(公告)日：1988-08-23
申请号：CA493187
申请日：1985-10-17
Applicant: SONY CORP
Inventor： ITO YUJIRO , KOMATSU YASUTOSHI , OTOBE TAKASHI
IPC: H01P1/06
Abstract: A dielectric rotary coupler for electromagnetic waves of the microwave frequency region structured of a substantially ring-shaped rotary member and a stationary member, each member being formed of a dielectric waveguide, or line, having a rectangular cross-section. The-rotary line and the stationary line are arranged to face each other with a predetermined space therebetween along a coupling length, through which a microwave, for example, a carrier microwave FMmodulated by a signal reproduced by a rotary head of a VTR, is coupled from the rotary line to the stationary line, or vice versa.
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公开(公告)号：CA1186734A
公开(公告)日：1985-05-07
申请号：CA418764
申请日：1982-12-30
Applicant: SONY CORP
Inventor： OTOBE TAKASHI , KOMATSU YASUTOSHI , MURAKAMI YOSHIKAZU
Abstract: PHASE DETECTORS FOR DETECTING A MUTUAL PHASE DIFFERENCE BETWEEN TWO SIGNALS A phase detector for detecting a mutual phase difference between two signals, such as first and second microwave signals, comprises first and second signal paths for being supplied with first and second input signals of the same frequency, respectively, and providing with a predetermined additional mutual phase difference between the first and second input signals at their output ends and a field effect transistor having a pair of input electrodes connected to the output ends of the first and second signal paths, respectively, and an output electrode from which an output signal representing a mutual phase difference which the first and second input signals have originally therebetween is derived. The first and second input signals at the input electrodes of the field effect transistor have the original mutual phase difference which is to be detected and the predetermined additional mutual phase difference added by the first and second signal paths therebetween. The field effect trasistor is biased to operate with a gate bias voltage nearly equal to a pinch-off voltage thereof. In order to establish such biasing state without reducing the operational gain of the field effect transistor, a biasing resistance connected to the source of the field effect transistor is selected to be low and a cuurent source is provided for supplying an external biasing current to the biasing resistance, thereby to produce the gate bias voltage required.
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公开(公告)号：DE3300397A1
公开(公告)日：1983-07-21
申请号：DE3300397
申请日：1983-01-07
Applicant: SONY CORP
Inventor： OTOBE TAKASHI , KOMATSU YASUTOSHI , MURAKAMI YOSHIKAZU
Abstract: A phase detector for detecting a mutual phase difference between two signals, such as first and second microwave signals, comprises first and second signal paths for being supplied with first and second input signals of the same frequency, respectively, and providing with a predetermined additional mutual phase difference between the first and second input signals at their output ends and a field effect transistor having a pair of input electrodes connected to the output ends of the first and second signal paths, respectively, and an output electrode from which an output signal representing a mutual phase difference which the first and second input signals have originally therebetween is derived. The first and second input signals at the input electrodes of the field effect transistor have the original mutual phase difference which is to be detected and the predetermined additional mutual phase difference added by the first and second signal paths therebetween. The field effect transistor is biased to operate with a gate bias voltage nearly equal to a pinch-off voltage thereof. In order to establish such biasing state without reducing the operational gain of the field effect transistor, a biasing resistance connected to the source of the field effect transistor is selected to be low and a current source is provided for supplying an external biasing current to the biasing resistance, thereby to produce the gate bias voltage required.
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Patent Agency Ranking
公开(公告)号：DE2558145A1
公开(公告)日：1976-07-01
申请号：DE2558145
申请日：1975-12-23
Applicant: SONY CORP
Inventor： KOMATSU YASUTOSHI , YANAGISAWA YUZURU
Abstract: A surface acoustic wave filter having a piezo-electric substrate with a major surface and input and output transducers, each haing a plurality of finger electrodes formed on the major surface to define a propagation path for surface acoustic waves. Finger electrodes of one of the transducers have a step-like configuration to divide the surface wave propagation path into a plurality of surface wave propagation channels. The phase differences of the channels and the length of the steps of the finger electrodes are selected to minimize the multiple reflection echo between the input and output transducers to reduce ripples in the pass band.
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公开(公告)号：DE19804568A1
公开(公告)日：1998-08-13
申请号：DE19804568
申请日：1998-02-05
Applicant: SONY CORP
Inventor： KOMATSU YASUTOSHI , HAYASHI YUTAKA
IPC: H01L29/78 , H01L21/336 , H01L21/84 , H01L27/02 , H01L27/12 , H01L29/10 , H01L29/786 , H01L27/088 , H01L23/58
Abstract: An insulated-gate field effect transistor comprising a channel forming region, source/drain regions, a gate region, a bias supplying means, and a capacitive element, wherein a potential for controlling a gate threshold voltage of the insulated-gate field effect transistor in an off-state thereof is applied to the channel forming region through the bias supplying means, and a signal having approximately the same phase as a phase of a signal supplied to the gate region is supplied to the channel forming region through the capacitive element.
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公开(公告)号：GB2322003A
公开(公告)日：1998-08-12
申请号：GB9802209
申请日：1998-02-02
Applicant: SONY CORP
Inventor： KOMATSU YASUTOSHI , HAYASHI YUTAKA
IPC: H01L21/336 , H01L21/84 , H01L29/78 , H01L27/02 , H01L27/12 , H01L29/10 , H01L29/786 , H01L29/423
Abstract: An IGFET, which may be in the form of a thin film transistor, has a bias element 30 and a capacitive element 40. A potentiual for controlling the gate threshold voltage is applied to the bias element whilst a signal of the same phase is supplied to the capacitive element. The bias element is either directly adjacent to the channel region or in the form of an additional second gate (figure 12A).
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公开(公告)号：DE3587469T2
公开(公告)日：1993-11-04
申请号：DE3587469
申请日：1985-10-30
Applicant: SONY CORP
Inventor： KOMATSU YASUTOSHI
Abstract: A rotary coupler is disclosed, in which a rotor (11, 411, 511) and a non-rotor (stator 12, 412, 512) are provided on their facing surfaces with microstrip lines (15, 16; 115, 116; 215, 216; 315; 316; 415, 416; 515, 516) which are disposed along circles concentric with the axis of the rotor (11, 411, 511) and facing one another. High frequency signals are transferred between the microstrip line (15, 115, 215, 315, 415, 515) on the side of the rotor (11, 411, 511) and the microstrip line (16, 116, 216, 316, 416, 516) on the side of the non-rotor (12, 412, 512).
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公开(公告)号：CA1249040A
公开(公告)日：1989-01-17
申请号：CA493809
申请日：1985-10-24
Applicant: SONY CORP
Inventor： KOMATSU YASUTOSHI
Abstract: A rotary coupler is disclosed, in which a rotor and a non-rotor are provided on their facing surfaces with microstrip lines which are disposed along circles concentric with the axis of the rotor and facing one another. High frequency signals are transferred between the microstrip line on the side of the rotor and the microstrip line on the side of the non-rotor.
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