公开(公告)号：SG157320A1

公开(公告)日：2009-12-29

申请号：SG2009033887

申请日：2009-05-14

Applicant: SONY CORP

Inventor： NAKATSUGAWA YASUMASA ,  KURITA TARO ,  HAMADA HIROAKI ,  MORITA TADASHI ,  TAKEMURA TOSHIHARU ,  ZHU YINGLIN ,  CHIBA MIKI ,  NAKAMURA MITSUHIRO ,  KANEMOTO TOSHINORI ,  HIGASHIKAWA TOSHIMITSU

IPC: G06F21/22

Abstract: INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, PROGRAM AND COMMUNICATION SYTEM An information processing device includes: a data storage portion that can store user data used in a particular non-contact communication service and management information to manage the user data in different storage areas corresponding to different encryption methods and that has a first storage area storing management information corresponding to a first encryption method; an issuing information receiver that receives issuing information encrypted with the first encryption method from an issuing device delivering the issuing information to issue management information corresponding to a second encryption method; an issuing information decryption portion that decrypts the received issuing information with the first encryption method, based on the management information corresponding to the first encryption method stored in the first storage area; and a management information issuing portion that, based on the decrypted issuing information, issues the management information corresponding to the second encryption method and stores it in a second storage area.

公开(公告)号：ES2165515T3

公开(公告)日：2002-03-16

申请号：ES96927199

申请日：1996-08-20

Applicant: SONY CORP

Inventor： NAKAMURA MITSUHIRO ,  WADA MASURA ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28

Abstract: It is intended to provide a multi-layered structure for fabricating an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics and an ohmic electrode obtained by using it. On a III-V compound semiconductor substrate such as an n -type GaAs substrate, a non-single crystal semiconductor layer such as a non-single crystal In0.7Ga0.3As layer, a metal film such as a Ni film, a metal nitride film such as a WN film and a refractory metal film such as a W film are sequentially stacked by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is annealed at 500 to 600 DEG C, e.g. 550 DEG C for one second by, e.g. RTA method to fabricate an ohmic electrode.

公开(公告)号：CA2203557A1

公开(公告)日：1997-03-06

申请号：CA2203557

申请日：1996-08-20

Applicant: SONY CORP

Inventor： MURAKAMI MASANORI ,  WADA MASARU ,  NAKAMURA MITSUHIRO ,  UCHIBORI CHIHIRO

IPC: H01L21/285 ,  H01L29/45

Abstract: A laminate for forming ohmic electrode having practically satisfactory properties for contact with a III-V compound semiconductor such as GaAs, and an ohmic electrode obtained by using this laminate. A semiconductor layer such as non-single-crystal In0.7Ga0.3As layer, a thin metal film such as Ni, a thin metal nitride film such as Wn and a thin high-melting metal film such as W are successively formed on a III-V compound semiconductor substrate such as n+type GaAs substrate by sputtering. These films are then patterned by liftingoff to form a laminate for forming ohmic electrode. Then, the laminate is heattreated by, for example, the RTA method at 500 to 600 ~C, e.g., at 550 ~C for one second to form an ohmic electrode.

公开(公告)号：AT209394T

公开(公告)日：2001-12-15

申请号：AT96927199

申请日：1996-08-20

Applicant: SONY CORP

Inventor： NAKAMURA MITSUHIRO ,  WADA MASURA ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28

Abstract: It is intended to provide a multi-layered structure for fabricating an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics and an ohmic electrode obtained by using it. On a III-V compound semiconductor substrate such as an n -type GaAs substrate, a non-single crystal semiconductor layer such as a non-single crystal In0.7Ga0.3As layer, a metal film such as a Ni film, a metal nitride film such as a WN film and a refractory metal film such as a W film are sequentially stacked by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is annealed at 500 to 600 DEG C, e.g. 550 DEG C for one second by, e.g. RTA method to fabricate an ohmic electrode.

公开(公告)号：BR9606606A

公开(公告)日：1997-09-16

申请号：BR9606606

申请日：1996-08-20

Applicant: SONY CORP

Inventor： NAKAMURA MITSUHIRO ,  WADA MASARU ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28

Abstract: It is intended to provide a multi-layered structure for fabricating an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics and an ohmic electrode obtained by using it. On a III-V compound semiconductor substrate such as an n -type GaAs substrate, a non-single crystal semiconductor layer such as a non-single crystal In0.7Ga0.3As layer, a metal film such as a Ni film, a metal nitride film such as a WN film and a refractory metal film such as a W film are sequentially stacked by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is annealed at 500 to 600 DEG C, e.g. 550 DEG C for one second by, e.g. RTA method to fabricate an ohmic electrode.

公开(公告)号：HK1138087A1

公开(公告)日：2010-08-13

申请号：HK10103620

申请日：2010-04-14

Applicant: SONY CORP

Inventor： NAKATSUGAWA YASUMASA ,  KURITA TARO ,  HAMADA HIROAKI ,  MORITA TADASHI ,  TAKEMURA TOSHIHARU ,  ZHU YINGLIN ,  CHIBA MIKI ,  NAKAMURA MITSUHIRO ,  KANEMOTO TOSHINORI ,  HIGASHIKAWA TOSHIMITSU

IPC: G06F20060101

Abstract: An information processing device includes: a data storage portion that can store user data used in a particular non-contact communication service and management information to manage the user data in different storage areas corresponding to different encryption methods and that has a first storage area storing management information corresponding to a first encryption method; an issuing information receiver that receives issuing information encrypted with the first encryption method from an issuing device delivering the issuing information to issue management information corresponding to a second encryption method; an issuing information decryption portion that decrypts the received issuing information with the first encryption method, based on the management information corresponding to the first encryption method stored in the first storage area; and a management information issuing portion that, based on the decrypted issuing information, issues the management information corresponding to the second encryption method and stores it in a second storage area.

公开(公告)号：DE69318466D1

公开(公告)日：1998-06-18

申请号：DE69318466

申请日：1993-03-30

Applicant: SONY CORP

Inventor： SHINOHARA IKUO ,  KATAYAMA KENICHI ,  NAKAMURA MITSUHIRO

IPC: H04R1/10 ,  H04R5/033

Abstract: The present invention is directed to a headphone which comprises a pair of housing members into which speaker units and diaphragms are accommodated, protector members having sound radiating portions on which a plurality of sound radiating apertures are bored and respectively provided on the pair of housing members at their sound radiation sides from which a sound is radiated by a vibration of the diaphragms, and supporting members for supporting the housing members within the cavum concha of an auricle of a listener' ear so that the sound radiating portion is opposed to the entrance of an external auditory meatus in the auricle of the listener's ear, wherein the housing member has a concave portion that is engaged with one portion of the auricle of the listener's ear when the housing member is fitted into the auricle of the listener's ear.

公开(公告)号：MX9702916A

公开(公告)日：1997-09-30

申请号：MX9702916

申请日：1996-08-20

Applicant: SONY CORP

Inventor： NAKAMURA MITSUHIRO ,  WADA MASARU ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28

Abstract: Se presenta una estructura de capas multiples para fabricar un electrodoohmico para semiconductores de compuestos III-V tales como semiconductores GaAs que tiene características prácticamente satisfactorias y un electrodo ohmico obtenido mediante el uso de tal estructura. En un sustrato semiconductor de compuestos III-V como, por ejemplo, un sustrato GaAs de tipo A+, se aplican secuencialmente mediante deposito electronico una capa semiconductora de cristal no unico como por ejemplo una capa de InO.7GaO.3As de cristal no unico, una película metálica como por ejemplo una película de N1, una película de nitruro metálico como por ejemplo una película WN y una película de metal refractario como por ejemplo una película W, etc., y se forma subsecuentemente en patrones mediante desprendimiento, etc., para elaborar una estructura de capas multiples para fabricar electrodos ohmicos. La estructura se templa a una temperatura comprendida entre 500 degree C y 600 degree C, por ejemplo 550 degree C durante un segundo mediante, por ejemplo, el método RTA para fabricar un electrodo ohmico.

公开(公告)号：AU6709996A

公开(公告)日：1997-03-19

申请号：AU6709996

申请日：1996-08-20

Applicant: SONY CORP

Inventor： NAKAMURA MITSUHIRO ,  WADA MASURA ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28

Abstract: It is intended to provide a multi-layered structure for fabricating an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics and an ohmic electrode obtained by using it. On a III-V compound semiconductor substrate such as an n -type GaAs substrate, a non-single crystal semiconductor layer such as a non-single crystal In0.7Ga0.3As layer, a metal film such as a Ni film, a metal nitride film such as a WN film and a refractory metal film such as a W film are sequentially stacked by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is annealed at 500 to 600 DEG C, e.g. 550 DEG C for one second by, e.g. RTA method to fabricate an ohmic electrode.

公开(公告)号：JP2013174692A

公开(公告)日：2013-09-05

申请号：JP2012038527

申请日：2012-02-24

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KINOSHITA MASAHIRO ,  FUKUMA YOHEI ,  NAKAMURA MITSUHIRO

IPC: G09F9/00 ,  G02F1/1333 ,  G09F9/30 ,  H01L51/50 ,  H05B33/02

Abstract: PROBLEM TO BE SOLVED: To prevent a housing from being damaged or broken during being bent by securing excellent flexibility of the end part on the outer peripheral side.SOLUTION: A display device includes: a housing which has a foldable connected surface part and a pair of base surface parts, each of which is provided continuously to the connected surface part on the opposite side across the connected surface part and which is formed of an elastically deformable material; and a flexible display which is mounted on the housing in the thickness direction of the base surface part and which has flexibility. The pair of base surfaces parts is made possible to be opened and closed by using the connected surface part as a fulcrum portion, respective end parts on the side continuous to the connected surface part and on the opposite side are provided as a flexible end part, and the housing is formed so that its thickness becomes thinner as at least the flexible end parts come closer to the outer ends.

Abstract translation: 要解决的问题：通过确保端部在外周侧上的优异的柔性来防止壳体在弯曲期间被损坏或破裂。显示装置包括：壳体，其具有可折叠的连接表面部分和一对 的基面部分，每个基面部分连续地设置在穿过连接的表面部分的相对侧上的连接表面部分上，并且由可弹性变形的材料形成; 以及柔性显示器，其在基部表面部分的厚度方向上安装在壳体上并且具有柔性。 通过使用连接的表面部分作为支点部分，一对基面部分可以被打开和关闭，在与连接的表面部分连续的一侧和相对侧上的相应端部设置为柔性端部， 并且壳体形成为使得其厚度变得更薄，因为至少柔性端部部分更靠近外端。