公开(公告)号：ES2165515T3

公开(公告)日：2002-03-16

申请号：ES96927199

申请日：1996-08-20

Applicant: SONY CORP

Inventor： NAKAMURA MITSUHIRO ,  WADA MASURA ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28

Abstract: It is intended to provide a multi-layered structure for fabricating an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics and an ohmic electrode obtained by using it. On a III-V compound semiconductor substrate such as an n -type GaAs substrate, a non-single crystal semiconductor layer such as a non-single crystal In0.7Ga0.3As layer, a metal film such as a Ni film, a metal nitride film such as a WN film and a refractory metal film such as a W film are sequentially stacked by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is annealed at 500 to 600 DEG C, e.g. 550 DEG C for one second by, e.g. RTA method to fabricate an ohmic electrode.

公开(公告)号：CA2203557A1

公开(公告)日：1997-03-06

申请号：CA2203557

申请日：1996-08-20

Applicant: SONY CORP

Inventor： MURAKAMI MASANORI ,  WADA MASARU ,  NAKAMURA MITSUHIRO ,  UCHIBORI CHIHIRO

IPC: H01L21/285 ,  H01L29/45

Abstract: A laminate for forming ohmic electrode having practically satisfactory properties for contact with a III-V compound semiconductor such as GaAs, and an ohmic electrode obtained by using this laminate. A semiconductor layer such as non-single-crystal In0.7Ga0.3As layer, a thin metal film such as Ni, a thin metal nitride film such as Wn and a thin high-melting metal film such as W are successively formed on a III-V compound semiconductor substrate such as n+type GaAs substrate by sputtering. These films are then patterned by liftingoff to form a laminate for forming ohmic electrode. Then, the laminate is heattreated by, for example, the RTA method at 500 to 600 ~C, e.g., at 550 ~C for one second to form an ohmic electrode.

公开(公告)号：DE69428750T2

公开(公告)日：2002-08-01

申请号：DE69428750

申请日：1994-08-10

Applicant: SONY CORP

Inventor： MURAKAMI MASANORI ,  OKU TAKEO ,  OTSUKI AKIRA

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/45

Abstract: It is intended to realize an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics. Provided on an n -type GaAs substrate is an ohmic electrode in which an n -type regrown GaAs layer regrown from the n -type GaAs substrate and a NiGe film containing precipitates composed of alpha '-AuGa are sequentially stacked. The ohmic electrode may be fabricated by sequentially stacking a Ni film, Au film and Ge film on the n -type GaAs substrate, then patterning these films by, for example, lift-off, and thereafter annealing the structure at a temperature of 400 SIMILAR 750 DEG C for several seconds to several minutes.

公开(公告)号：MY118640A

公开(公告)日：2004-12-31

申请号：MYPI9603429

申请日：1996-08-20

Applicant: SONY CORP

Inventor： NAKAMURA MITSUHIRO ,  WADA MASARU ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/45

Abstract: IT IS INTENDED TO PROVIDE A MULTI-LAYERED STRUCTURE FOR FABRICATING AN OHMIC ELECTRODE (7) FOR III-V COMPOUND SEMICONDUCTORS SUCH AS GAAS SEMICONDUCTORS WHICH HAS PRACTICALLY SATISFACTORY CHARACTERISTICS AND AN OHMIC ELECTRODE (7) OBTAINED BY USING IT. ON A III-V COMPOUND SEMICONDUCTOR SUBSTRATE SUCH AS AN N+-TYPE GAAS SUBSTRATE, A NON-SINGLE CRYSTAL SEMICONDUCTOR LAYER (3) SUCH AS A NON-SINGLE CRYSTAL INO. 7GAO. 3AS LAYER, A METAL FILM (4)SUCH AS A NI FILM, A METAL NITRIDE FILM (5)SUCH AS A WN FILM (4) AND A REFRACTORY METAL FILM SUCH AS A W FILM ARE SEQUENTIALLY STACKED BY SPUTTERING, ETC. AND SUBSEQUENTLY PATTERNED BY LIFT-OFF, ETC. TO MAKE A MULTI-LAYERED STRUCTURE FOR FABRICATING OHMIC ELECTRODES. THE STRUCTURE IS ANNEALED AT 500 TO 600°C, E.G. 550°C FOR ONE SECOND BY, E.G. RTA METHOD TO FABRICATE AN OHMIC ELECTRODE(7).

公开(公告)号：DE69428750D1

公开(公告)日：2001-11-29

申请号：DE69428750

申请日：1994-08-10

Applicant: SONY CORP

Inventor： MURAKAMI MASANORI ,  OKU TAKEO ,  OTSUKI AKIRA

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/45

Abstract: It is intended to realize an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics. Provided on an n -type GaAs substrate is an ohmic electrode in which an n -type regrown GaAs layer regrown from the n -type GaAs substrate and a NiGe film containing precipitates composed of alpha '-AuGa are sequentially stacked. The ohmic electrode may be fabricated by sequentially stacking a Ni film, Au film and Ge film on the n -type GaAs substrate, then patterning these films by, for example, lift-off, and thereafter annealing the structure at a temperature of 400 SIMILAR 750 DEG C for several seconds to several minutes.

公开(公告)号：MX9702916A

公开(公告)日：1997-09-30

申请号：MX9702916

申请日：1996-08-20

Applicant: SONY CORP

Inventor： NAKAMURA MITSUHIRO ,  WADA MASARU ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28

Abstract: Se presenta una estructura de capas multiples para fabricar un electrodoohmico para semiconductores de compuestos III-V tales como semiconductores GaAs que tiene características prácticamente satisfactorias y un electrodo ohmico obtenido mediante el uso de tal estructura. En un sustrato semiconductor de compuestos III-V como, por ejemplo, un sustrato GaAs de tipo A+, se aplican secuencialmente mediante deposito electronico una capa semiconductora de cristal no unico como por ejemplo una capa de InO.7GaO.3As de cristal no unico, una película metálica como por ejemplo una película de N1, una película de nitruro metálico como por ejemplo una película WN y una película de metal refractario como por ejemplo una película W, etc., y se forma subsecuentemente en patrones mediante desprendimiento, etc., para elaborar una estructura de capas multiples para fabricar electrodos ohmicos. La estructura se templa a una temperatura comprendida entre 500 degree C y 600 degree C, por ejemplo 550 degree C durante un segundo mediante, por ejemplo, el método RTA para fabricar un electrodo ohmico.

公开(公告)号：AU6709996A

公开(公告)日：1997-03-19

申请号：AU6709996

申请日：1996-08-20

Applicant: SONY CORP

Inventor： NAKAMURA MITSUHIRO ,  WADA MASURA ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28

Abstract: It is intended to provide a multi-layered structure for fabricating an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics and an ohmic electrode obtained by using it. On a III-V compound semiconductor substrate such as an n -type GaAs substrate, a non-single crystal semiconductor layer such as a non-single crystal In0.7Ga0.3As layer, a metal film such as a Ni film, a metal nitride film such as a WN film and a refractory metal film such as a W film are sequentially stacked by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is annealed at 500 to 600 DEG C, e.g. 550 DEG C for one second by, e.g. RTA method to fabricate an ohmic electrode.

公开(公告)号：AT209394T

公开(公告)日：2001-12-15

申请号：AT96927199

申请日：1996-08-20

Applicant: SONY CORP

Inventor： NAKAMURA MITSUHIRO ,  WADA MASURA ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28

Abstract: It is intended to provide a multi-layered structure for fabricating an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics and an ohmic electrode obtained by using it. On a III-V compound semiconductor substrate such as an n -type GaAs substrate, a non-single crystal semiconductor layer such as a non-single crystal In0.7Ga0.3As layer, a metal film such as a Ni film, a metal nitride film such as a WN film and a refractory metal film such as a W film are sequentially stacked by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is annealed at 500 to 600 DEG C, e.g. 550 DEG C for one second by, e.g. RTA method to fabricate an ohmic electrode.

公开(公告)号：BR9606606A

公开(公告)日：1997-09-16

申请号：BR9606606

申请日：1996-08-20

Applicant: SONY CORP

Inventor： NAKAMURA MITSUHIRO ,  WADA MASARU ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28

Abstract: It is intended to provide a multi-layered structure for fabricating an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics and an ohmic electrode obtained by using it. On a III-V compound semiconductor substrate such as an n -type GaAs substrate, a non-single crystal semiconductor layer such as a non-single crystal In0.7Ga0.3As layer, a metal film such as a Ni film, a metal nitride film such as a WN film and a refractory metal film such as a W film are sequentially stacked by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is annealed at 500 to 600 DEG C, e.g. 550 DEG C for one second by, e.g. RTA method to fabricate an ohmic electrode.

公开(公告)号：JP2011166305A

公开(公告)日：2011-08-25

申请号：JP2010024623

申请日：2010-02-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MURAKAMI MASANORI ,  TSUJIMURA TAKASHI ,  TOCHI YOSHIFUMI ,  NAKAMURA KENJI

IPC: H04N5/232 ,  G03B15/00 ,  H04N5/225 ,  H04N101/00

Abstract: PROBLEM TO BE SOLVED: To specify and track a head of a subject person, even when the detection of the face of the subject person is impossible in a moving image.
SOLUTION: The image processing apparatus includes: a face detection unit 21 for detecting the face of the subject person from captured image data obtained by an imaging unit; a memory 7 for storing head information including the face of the subject person detected in the face detection unit 21; and a head tracking unit 22 for continuously detecting the head including the part from the profile to the back of the head of the subject person in the present captured image data on the basis of the head information including the face of the subject person stored in the memory 7.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：即使在运动图像中检测到被摄体的脸部是不可能的，也可以指定和跟踪被摄体的头部。 解决方案：图像处理装置包括：脸部检测单元21，用于从由成像单元获得的拍摄图像数据中检测被摄体的脸部; 用于存储包括在面部检测单元21中检测到的被摄体人脸的头信息的存储器7; 以及头跟踪单元22，用于根据包含存储在该摄影图像数据中的被摄体的脸部的头部信息，连续地检测包括从该人物头部的轮廓到该背部的头部的头部 记忆7.版权所有（C）2011，JPO＆INPIT