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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    2.
    发明公开
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG

    公开(公告)号：EP1519418A4

    公开(公告)日：2008-06-25

    申请号：EP03762870

    申请日：2003-07-02

    Applicant: SONY CORP

    Inventor： WADA MASARU ,  KONDO SHINICHIRO ,  YASUDA RYOUICHI

    IPC: H01L51/00 ,  H01L51/05 ,  H01L21/00 ,  H01L21/336 ,  H01L29/76 ,  H01L29/78 ,  H01L29/786 ,  H01L35/24 ,  H01L51/30 ,  H01L51/40

    CPC classification number: H01L51/0566 ,  B82Y10/00 ,  H01L51/0012 ,  H01L51/005 ,  H01L51/0068 ,  H01L51/0075 ,  H01L51/0094 ,  H01L51/0095 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/89 ,  Y10S977/936 ,  Y10S977/938

    Abstract: A semiconductor device having a conducting path of novel structure, which is formed from an organic semiconductor molecule material and shows a high mobility, and method for manufacturing such a semiconductor device. By a functional group at both ends of an organic semiconductor molecule (9) such as 4,4’- biphenyldithiol, fine particles (8) made of a conductor such as Au or a semiconductor and organic semiconductor molecules (9) are alternately linked, thereby forming a conducting path of network structure wherein conducting paths within the fine particles (8) are two-dimensionally or three-dimensionally linked with conducting paths within the organic semiconductor molecules (9). In this conducting path, there occurs no move of electrons between molecules and the mobility is not restricted by such move of electrons between molecules. Consequently, the mobility of the conducting path along the main chain of the organic semiconductor molecule (which is in the direction of molecular axis), for example the high mobility of non-localized ? electrons within molecule can be utilized to the maximum.

    Abstract translation: 一种具有由有机半导体分子材料形成并具有高迁移率的新颖结构的导电路径的半导体器件以及用于制造这种半导体器件的方法。 通过4,4'-联苯基二硫醇等有机半导体分子（9）两端的官能团，由Au或半导体等导体构成的微粒（8）与有机半导体分子（9）交替连接， 从而形成网状结构的导电路径，其中细微颗粒（8）内的导电路径与有机半导体分子（9）内的导电路径二维或三维连接。 在这种导电路径中，在分子之间不发生电子移动，并且移动性不受分子之间的电子移动的限制。 因此，导电路径沿着有机半导体分子的主链（其在分子轴的方向上）的迁移率，例如非局域？ 分子内的电子可以被最大限度地利用。

    MULTI-LAYERED STRUCTURE FOR FABRICATING AN OHMIC ELECTRODE AND OHMIC ELECTRODE
    3.
    发明专利
    MULTI-LAYERED STRUCTURE FOR FABRICATING AN OHMIC ELECTRODE AND OHMIC ELECTRODE 未知

    公开(公告)号：CA2203557A1

    公开(公告)日：1997-03-06

    申请号：CA2203557

    申请日：1996-08-20

    Applicant: SONY CORP

    Inventor： MURAKAMI MASANORI ,  WADA MASARU ,  NAKAMURA MITSUHIRO ,  UCHIBORI CHIHIRO

    IPC: H01L21/285 ,  H01L29/45

    Abstract: A laminate for forming ohmic electrode having practically satisfactory properties for contact with a III-V compound semiconductor such as GaAs, and an ohmic electrode obtained by using this laminate. A semiconductor layer such as non-single-crystal In0.7Ga0.3As layer, a thin metal film such as Ni, a thin metal nitride film such as Wn and a thin high-melting metal film such as W are successively formed on a III-V compound semiconductor substrate such as n+type GaAs substrate by sputtering. These films are then patterned by liftingoff to form a laminate for forming ohmic electrode. Then, the laminate is heattreated by, for example, the RTA method at 500 to 600 ~C, e.g., at 550 ~C for one second to form an ohmic electrode.

    5.
    发明专利
    未知

    公开(公告)号：BR9606606A

    公开(公告)日：1997-09-16

    申请号：BR9606606

    申请日：1996-08-20

    Applicant: SONY CORP

    Inventor： NAKAMURA MITSUHIRO ,  WADA MASARU ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

    IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28

    Abstract: It is intended to provide a multi-layered structure for fabricating an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics and an ohmic electrode obtained by using it. On a III-V compound semiconductor substrate such as an n -type GaAs substrate, a non-single crystal semiconductor layer such as a non-single crystal In0.7Ga0.3As layer, a metal film such as a Ni film, a metal nitride film such as a WN film and a refractory metal film such as a W film are sequentially stacked by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is annealed at 500 to 600 DEG C, e.g. 550 DEG C for one second by, e.g. RTA method to fabricate an ohmic electrode.

    7.
    发明专利
    未知

    公开(公告)号：FR2573918A1

    公开(公告)日：1986-05-30

    申请号：FR8517518

    申请日：1985-11-27

    Applicant: SONY CORP

    Inventor： WADA MASARU ,  KATO YOJI

    IPC: H01L21/22 ,  H01L21/033 ,  H01L21/223 ,  H01L21/308

    Abstract: A method for selectively diffusing impurities such as zinc into the substrate of a compound semiconductor such as gallium arsenide (GaAs). The method makes use of a diffusion mask in such a manner that the thickness of the oxygen-containing layer at the interface between the diffusion mask and the semiconductor substrate is less than 20 ANGSTROM so that the abnormal transverse diffusion that would otherwise occur at the interface in the vicinity of the opening of the diffusion mask on the semiconductor surface is suppressed. The result is an increased accuracy in the diffusion pattern of the impurities.

    LAMINATE AND PROCESS FOR FORMING OHMIC ELECTRODE
    8.
    发明专利
    LAMINATE AND PROCESS FOR FORMING OHMIC ELECTRODE 未知

    公开(公告)号：MY118640A

    公开(公告)日：2004-12-31

    申请号：MYPI9603429

    申请日：1996-08-20

    Applicant: SONY CORP

    Inventor： NAKAMURA MITSUHIRO ,  WADA MASARU ,  UCHIBORI CHIHIRO ,  MURAKAMI MASANORI

    IPC: H01L21/28 ,  H01L21/285 ,  H01L29/45

    Abstract: IT IS INTENDED TO PROVIDE A MULTI-LAYERED STRUCTURE FOR FABRICATING AN OHMIC ELECTRODE (7) FOR III-V COMPOUND SEMICONDUCTORS SUCH AS GAAS SEMICONDUCTORS WHICH HAS PRACTICALLY SATISFACTORY CHARACTERISTICS AND AN OHMIC ELECTRODE (7) OBTAINED BY USING IT. ON A III-V COMPOUND SEMICONDUCTOR SUBSTRATE SUCH AS AN N+-TYPE GAAS SUBSTRATE, A NON-SINGLE CRYSTAL SEMICONDUCTOR LAYER (3) SUCH AS A NON-SINGLE CRYSTAL INO. 7GAO. 3AS LAYER, A METAL FILM (4)SUCH AS A NI FILM, A METAL NITRIDE FILM (5)SUCH AS A WN FILM (4) AND A REFRACTORY METAL FILM SUCH AS A W FILM ARE SEQUENTIALLY STACKED BY SPUTTERING, ETC. AND SUBSEQUENTLY PATTERNED BY LIFT-OFF, ETC. TO MAKE A MULTI-LAYERED STRUCTURE FOR FABRICATING OHMIC ELECTRODES. THE STRUCTURE IS ANNEALED AT 500 TO 600°C, E.G. 550°C FOR ONE SECOND BY, E.G. RTA METHOD TO FABRICATE AN OHMIC ELECTRODE(7).

    METHODS OF SELECTIVELY DIFFUSING IMPURITIES INTO SEMICONDUCTORS
    10.
    发明专利
    METHODS OF SELECTIVELY DIFFUSING IMPURITIES INTO SEMICONDUCTORS 未知

    公开(公告)号：GB2168194B

    公开(公告)日：1988-06-08

    申请号：GB8529057

    申请日：1985-11-26

    Applicant: SONY CORP

    Inventor： WADA MASARU ,  KATO YOJI

    IPC: H01L21/22 ,  H01L21/033 ,  H01L21/223 ,  H01L21/302

    Abstract: A method for selectively diffusing impurities such as zinc into the substrate of a compound semiconductor such as gallium arsenide (GaAs). The method makes use of a diffusion mask in such a manner that the thickness of the oxygen-containing layer at the interface between the diffusion mask and the semiconductor substrate is less than 20 ANGSTROM so that the abnormal transverse diffusion that would otherwise occur at the interface in the vicinity of the opening of the diffusion mask on the semiconductor surface is suppressed. The result is an increased accuracy in the diffusion pattern of the impurities.

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