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11.发明专利
公开(公告)号：JP2002100805A
公开(公告)日：2002-04-05
申请号：JP2001200183
申请日：2001-06-29
Applicant: SONY CORP
Inventor： OKUYAMA HIROYUKI , DOI MASATO , BIWA TSUYOSHI , OHATA TOYOJI , KIKUTANI TOMOYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, which can be manufactured with superior crystallinity, while penetrating dislocation, etc., from a substrate side are restrained without increasing the number of manufacturing processes, and at the same time, enables micronization of a chip structure. SOLUTION: A crystal layer, having an oblique crystal face (e.g., an S plane) which is slanted to a main surface of a substrate, is formed on the substrate. A first conductivity-type layer, an active layer and a second conductivity-type layer, which are stretched on a surface which is parallel with the oblique crystal plane, are formed on the crystal layer. At this point, a reflecting surface, which is stretched on the surface parallel to the oblique crystal plane, may be formed. The crystal layer, having the oblique crystal plane which is slanted with respect to the main surface of the substrate, is superior in crystallinity. Since the crystal plane is slanted, penetrating dislocation is prevented, and micronization of an element and isolation between elements are facilitated.
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公开(公告)号：JP2002033288A
公开(公告)日：2002-01-31
申请号：JP2000217911
申请日：2000-07-18
Applicant: SONY CORP
Inventor： BIWA TSUYOSHI , OKUYAMA HIROYUKI , DOI MASATO , OHATA TOYOJI
Abstract: PROBLEM TO BE SOLVED: To provide a crystal growing method by which high quality crystals, having low dislocation density can be obtained in vapor growth technique of nitride semiconductor, such as nitride gallium based compound semiconductor. SOLUTION: A mask layer 13 for obstructing crystal growth is formed on a substrate 10, in such a manner that a first nitride semiconductor layer 11 faces the mask layer, having an uneven part on the surface, in a window region which is formed by opening a part of the mask layer. A second nitride semiconductor layer 17 is grown on a region, including the upper part of the mask layer 13 by crystal growth from the uneven part. Penetrating dislocation 12, where growth in the lateral direction is fast, is terminated by a gap part 18 where crystals do not exist, so that propagation to the upper part can be prevented more surely.
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公开(公告)号：JPH07202318A
公开(公告)日：1995-08-04
申请号：JP34964793
申请日：1993-12-28
Applicant: SONY CORP
Inventor： ISHIBASHI AKIRA , OHATA TOYOJI
Abstract: PURPOSE:To realize a semiconductor laser which can emit light at a short wavelength and has low threshold current density. CONSTITUTION:In a semiconductor laser having an active layer 5 of a single quantum well structure or of a multiple quantum well structure wherein a quantum well layer constituting the active layer 5 comprises Zn MgxCdySe1-z compound semiconductor (where 0 /pimeffe is satisfied. Here epsilon is dielectric constant of the quantum well layer, (h) is Planck's constant, meff is a converted effective mass of an exciter generated in the quantum well layer, and (e) is quantum of electricity.
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公开(公告)号：JPH07154035A
公开(公告)日：1995-06-16
申请号：JP11446794
申请日：1994-04-28
Applicant: SONY CORP
Inventor： ITO SATORU , OHATA TOYOJI , ISHIBASHI AKIRA , NAKAYAMA NORIKAZU
IPC: H01L33/06 , H01L33/10 , H01L33/12 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S3/18 , H01L33/00
Abstract: PURPOSE:To realize a blue or green semiconductor light emitting element which can operate without heating while exhibiting excellent light and carrier confinement characteristics and can be fabricated easily using a ZnMqSSe based compound conductor as the material of a clad layer. CONSTITUTION:An n-type Zn1-pMgpSqSe1-q clad layer 3, an n-type ZnSe optical waveguide layer 4, an active layer 5, a p-type ZnSe optical waveguide layer 6, a p-type Zn1-pMgpSqSe1-q clad layer 7, a p-type ZnSvSe1-v layer 8 and a p-type ZnSe contact layer 9 are formed sequentially on an n-type GaAs substrate 1 through an n-type ZnSe buffer layer 2. A p-type electrode 11 is formed on the p-type ZnSe contact layer 9 and an n-side electrode 12 is formed on the rear of the n-type GaAs substrate 1 thus constituting a semiconductor light emitting element, e.g. a semiconductor laser or a LED. The active layer 5 is composed of an i-type Zn1-zCdzSe, for example.
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公开(公告)号：JPH0722706A
公开(公告)日：1995-01-24
申请号：JP15227793
申请日：1993-06-23
Applicant: SONY CORP
Inventor： NEMOTO KAZUHIKO , OGAWA MASAMICHI , OHATA TOYOJI
Abstract: PURPOSE:To provide light emitting device which is capable of completely new stereoscopec viewing where the efficiency for taking out output light is high, the device configuration can be miniaturized and light, and color purity and resolution of each color is high in the case of color display. CONSTITUTION:A plurality of laser devices 20 oscillating in a direction which is vertical to the main surface 1S of a substrate 1 are integrated on a substrate 1 and the dominant polarization directions of each irradiation light L of a plurality of laser devices 20 is constituted as two or more kinds of different directions as indicated by arrows (a) and (b).
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Patent Agency Ranking
公开(公告)号：JPH06104535A
公开(公告)日：1994-04-15
申请号：JP25309092
申请日：1992-09-22
Applicant: SONY CORP
Inventor： NEMOTO KAZUHIKO , OHATA TOYOJI , OGAWA MASAMICHI
Abstract: PURPOSE:To provide a multibeam semiconductor laser in which the interval of laser beam can be shortened without causing thermal interference between resonators and to increase design freedom of a system such as optical disk unit or magnetooptic disk unit employing the multibeam semiconductor laser. CONSTITUTION:A plurality of lasers 20A, 20B, each having resonator length in the direction of crystal axis , are disposed while opposing the light emitting edges on the main face, i.e., the crystal face {100}, of a semiconductor substrate. Crystal grow mirror faces 9A, 9B, each comprising a crystal face {110} making an angle of 45 deg. to the main face of the substrate, are disposed between the light emitting edges while opposing, respectively, thereto.
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公开(公告)号：JPH02174287A
公开(公告)日：1990-07-05
申请号：JP33013688
申请日：1988-12-27
Applicant: SONY CORP
Inventor： NARUI HIRONOBU , OHATA TOYOJI , MORI YOSHIFUMI
Abstract: PURPOSE:To acquire a semiconductor laser of a low threshold current of stable characteristics by forming a current block layer inside a mesa groove which forms a mesa protrusion in contact with a side of an active layer which is formed on the mesa protrusion through epitaxial growth extending over an entire thickness of the active layer, and by interposing it between first and second clad layers of second conductivity type. CONSTITUTION:An active layer 44 which becomes an operation region formed on a mesa protrusion 42 of a substrate 41 is interposed between a clad layer 43 of a first conductivity type and a first clad layer 45 of a second conductivity type, and a transverse direction thereof is made a BH structure which is enclosed with a current block layer 46. Both sides of the active layer 44 are controlled on an extensions of a slope 49 made by a crystal face 111B generated on a clad layer 2 of the first conductivity type, and also controlled by a current block layer 46 of the first conductivity type. That is, to make a protrusion 42 nearly a forward mesa, the current block layer 46 is formed as a surely flat surface 311 at both sides of an active layer 44 as a light emitting section which is interposed therebetween extending over the entire thickness thereof.
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公开(公告)号：JPH0265288A
公开(公告)日：1990-03-05
申请号：JP21782988
申请日：1988-08-31
Applicant: SONY CORP
Inventor： OHATA TOYOJI , NARUI HIRONOBU , MORI YOSHIFUMI
IPC: H01S5/00
Abstract: PURPOSE:To easily enable the formation of a semiconductor laser of a low threshold value by a method wherein a BH type semiconductor laser is made to have an active layer which has a refractive index difference in a lateral direction through a single crystal growth, and a current block layer is formed on both the sides of the active layer. CONSTITUTION:Both the sides of an active layer 3 are regulated not only by the extension of a slope 2a of a 111B crystal plane occurred in a first conductivity type clad layer 2 but also by a first conductivity type current block layer 5. That is, the current block layer 5 is formed on both sides of the active layer 3 or near both the sides of it sandwiching the stripe-like active layer 3 on a mesa-shaped protrusion 12. By this setup, a current is sufficiently constructed, so that the current does not expand and is concentrated onto the active layer 3 on the mesa-shaped protrusion 12. And, the current block layer 5 is formed between a second conductivity type clad layers 4 and 6 to regulate both the sides of the active layer 3 which become automatically active regions, so that a selective etching process, which is performed after the end of a continuous crystal growth, can dispense with and a manufacturing process can be simplified.
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公开(公告)号：JP2010251359A
公开(公告)日：2010-11-04
申请号：JP2009095896
申请日：2009-04-10
Inventor： MIZUNO TAKESHI , TOMOTA KATSUHIRO , OHATA TOYOJI
CPC classification number: H01L21/268 , H01L21/6835 , H01L24/83 , H01L24/95 , H01L33/0079 , H01L2221/68322 , H01L2221/68359 , H01L2224/83005 , H01L2224/83192 , H01L2224/838 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01057 , H01L2924/12041 , H01L2924/19043 , H01L2924/3025 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a device transferring method for transferring a device onto a second substrate, arranged separately from a first substrate, with excellent positional accuracy without processing the device surface. SOLUTION: A first substrate 1 is provided with a device 5 via a release layer 3 having a planar shape equal to or smaller than the device 5. A second substrate 7 has an adhesive layer 9 provided thereon. The first/second substrates are arranged separately from and oppositely to each other in a state that the device 5 and the adhesive layer 9 are faced to each other. A laser beam Lh, having an irradiation area larger than the base area of the release layer 3, is irradiated onto the whole surface of the release layer 3 from the side of the first substrate 1 so as to ablate the release layer 3, to separate the device 5 from on the first substrate 1, and to transfer the device on the second substrate 7. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：提供一种用于将器件转移到与第一衬底分开布置的第二衬底上的器件转移方法，具有优异的位置精度而不处理器件表面。 解决方案：第一基板1经由具有等于或小于装置5的平面形状的剥离层3设置有装置5.第二基板7具有设置在其上的粘合层9。 第一/第二基板在装置5和粘合剂层9彼此面对的状态下彼此分开布置并相互布置。 具有大于剥离层3的基底面积的照射面积的激光束Lh从第一基板1的侧面照射到剥离层3的整个表面上，以便剥离剥离层3，以分离 装置5从第一基板1上移动并将装置转移到第二基板7上。版权所有：（C）2011，JPO＆INPIT
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公开(公告)号：JP2008060608A
公开(公告)日：2008-03-13
申请号：JP2007297078
申请日：2007-11-15
Inventor： DOI MASATO , TOMOTA KATSUHIRO , WATANABE AKIHIKO , OHATA TOYOJI
CPC classification number: H01L2924/12041
Abstract: PROBLEM TO BE SOLVED: To provide an element transfer method and a display device that can easily exfoliate a substrate after an element is transferred from the substrate, where elements are arranged, to another substrate, is capable of reducing the possibility of damage on the substrate, and can transfer an additional element onto the same substrate again once the transfer of element is done. SOLUTION: A plurality of elements arranged on a temporary holding substrate is held by being embedded to an adhesive layer formed on a transfer substrate and the elements are peeled off from a temporary holding substrate. The elements can be arranged on the large area transfer substrate by additionally embedding the other elements to the adhesive layer before the adhesive layer is cured. Embedding of the elements having different characteristics from the elements embedded previously to the adhesive layer can easily provide a multi-color display device and a display device having a drive circuit. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供一种元件转移方法和显示装置，其在将元件从衬底上排列的元件转移到另一衬底之后能够容易地剥离衬底，能够降低损坏的可能性 一旦完成了元件的转移，就可以再次将附加元件转移到同一基板上。 解决方案：布置在临时保持基板上的多个元件通过嵌入到形成在转印基板上的粘合剂层而被保持，并且元件从临时保持基板上剥离。 在粘合剂层固化之前，通过另外将其它元件嵌入到粘合剂层中，可以将这些元件布置在大面积转移基板上。 将具有不同特征的元件嵌入到先前嵌入到粘合剂层中的元件可以容易地提供具有驱动电路的多色显示装置和显示装置。 版权所有（C）2008，JPO＆INPIT
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