公开(公告)号：JP2006190851A

公开(公告)日：2006-07-20

申请号：JP2005002057

申请日：2005-01-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OKUYAMA HIROYUKI ,  BIWA TSUYOSHI ,  KOJIMA SHIGERU ,  OHATA TOYOJI

IPC: H01L33/08 ,  H01L33/22 ,  H01L33/30 ,  H01L33/42 ,  H01L33/54 ,  H01L33/56

Abstract: PROBLEM TO BE SOLVED: To provide an integrated light emitting diode which can greatly reduce thermal resistance and of which the light emitting efficiency is high.
SOLUTION: An n-type GaN layer 15, an active layer 16, and a p-type GaN layer 17 are grown on a substrate in order, and after a p-side electrode 18 is formed thereon, these semiconductor layers are etched while the electrode 18 is used as a mask so as to form micro light emitting diodes of 20 μm or less in size. The conductive layer 21 of a semiconductor substrate 20 is stuck to the p-side electrode 18 of the micro light emitting diodes to make a heat sink. The substrate is peeled off by a laser peeling method, and then the semiconductor layer exposed by peeling is etched or polished to be flattened, and the flat surface is made uneven to scatter the light of an emitted wavelength, and then an n-side electrode 22 comprised of a transparent electrode is formed on the n-type GaN layer 15. Then, the semiconductor substrate 20 wherein the micro light emitting diodes are formed is cut into chips to obtain the integrated light emitting diode.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供可以大大降低热阻并且其发光效率高的集成发光二极管。 解决方案：在衬底上依次生长n型GaN层15，有源层16和p型GaN层17，并且在其上形成p侧电极18之后，这些半导体层是 在电极18用作掩模时蚀刻，以形成20μm以下的微小发光二极管。 将半导体衬底20的导电层21粘贴到微型发光二极管的p侧电极18上以形成散热片。 通过激光剥离法将基板剥离，然后通过剥离曝光的半导体层被蚀刻或抛光而变平，并且使平坦表面不均匀以散射发射波长的光，然后是n侧电极 在n型GaN层15上形成由透明电极构成的透明电极22.然后，将其中形成有微型发光二极管的半导体衬底20切成芯片以获得集成发光二极管。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005294867A

公开(公告)日：2005-10-20

申请号：JP2005186712

申请日：2005-06-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： BIWA TSUYOSHI ,  OKUYAMA HIROYUKI ,  DOI MASATO ,  OHATA TOYOJI

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor device which solves problems, such as deterioration of an active layer caused by a growth temperature of the active layer and nitride semiconductor layers laminated after that, and which is superior in device characteristics, such as luminous characteristic. SOLUTION: The active layer 13 with vapor-phase epitaxy formed on a substrate 10 is a mixed crystal including In, wherein an In composition ratio of the active layer 13 is set to be X(%), and the growth temperature T(°C) of all the nitride semiconductor layers, laminated after the vapor-phase epitaxy, is set to be (1,080-4.27X) or lower, thereby the problems, such as generation of nitrogen vacancy and In metallization caused, for example, by cutting of an In-N bond in the active layer 13 are prevented beforehand, and crystallinity of the active layer is kept to be satisfactory. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种解决诸如有源层的生长温度和层叠之后的氮化物半导体层引起的有源层劣化等问题的氮化物半导体器件的制造方法，其优点 在器件特性，如发光特性。 解决方案：在衬底10上形成气相外延的有源层13是包括In的混合晶体，其中活性层13的In组成比设定为X（％），生长温度T 在气相外延后层叠的氮化物半导体层的全部（℃）设定为（1,080〜4.27×）以下，由此产生氮空位和金属化等问题，例如， 预先防止有源层13中的In-N键的切断，有效层的结晶性保持良好。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005150673A

公开(公告)日：2005-06-09

申请号：JP2004120335

申请日：2004-04-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KOJIMA KENSUKE ,  TOMOTA KATSUHIRO ,  OHATA TOYOJI ,  DOI MASATO

IPC: H01L21/764 ,  H01L21/306 ,  H01L33/30 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide etching method capable of carrying out the etching which is uniform and can be easily controlled even in various semiconductor devices, such as semiconductor device of a multilayer structure or multi-element semiconductor and to provide an element isolation method. SOLUTION: The etching is as follows: an etchant composed of hydrochloric acid is cooled at 5°C or lower and a phosphorus semiconductor layer is immersed in the etchant. It is desirable that the etchant is cooled at 0°C or lower, considering maintenance of an active layer area. The phosphorous semiconductor layer may be a multilayer structure and have a layer containing aluminum as well as have a layer containing gallium, indium, or phosphorus. The unevenness of the etching can be prevented by carrying out the etching divided into a plurality of times and by carrying out the cleaning to remove bubbles on the surface of the phosphorous semiconductor layer in an interval of etching. When carrying out a plurality of etching, the temperature range of the entchant is desirably at -5°C or lower, more preferably at -10°C or lower. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供即使在多层结构或多元件半导体的半导体器件等各种半导体器件中也能够进行均匀且易于控制的蚀刻的蚀刻方法，并且提供元件 隔离方法。 解决方案：蚀刻如下：将由盐酸组成的蚀刻剂冷却至5℃或更低，并将磷半导体层浸入蚀刻剂中。 考虑到活性层面积的维持，希望将蚀刻剂冷却至0℃以下。 磷半导体层可以是多层结构，并且具有包含铝的层以及具有包含镓，铟或磷的层。 可以通过进行多次分割的蚀刻并且通过在蚀刻的间隔中进行清洁以去除磷半导体层的表面上的气泡来防止蚀刻的不均匀性。 当进行多次蚀刻时，引入剂的温度范围优选为-5℃以下，更优选为-10℃以下。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004281739A

公开(公告)日：2004-10-07

申请号：JP2003071566

申请日：2003-03-17

Applicant: Sony Corp ,  ソニー株式会社

Inventor： DOI MASATO ,  WATANABE AKIHIKO ,  TOMOTA KATSUHIRO ,  OHATA TOYOJI

IPC: H01L33/32 ,  H01L33/36 ,  H01L33/40 ,  H01L33/48 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device sufficiently connecting electrically even to a small size element main body and capable of sufficiently taking out light even when a wiring layer is connected to the element main body, and to provide the manufacturing method of such a semiconductor light emitting device. SOLUTION: A first conductive layer, a light emitting layer, and a second conductive layer having the type of conduction opposite to that of the first conductive layer and penetrating light emitted by the light emitting layer to the outside of the element, are laminated, while a metal layer for pouring a current for driving the semiconductor light emitting device is formed on the second conductive layer so as to be contacted with only the side surface of the second conductive layer. Even when the element is small and correct alignment is difficult, connection between the conductive layer and the metal layer is permitted easily and emitted light can be taken out while avoiding the shielding of a metal film or the like whereby the take-out efficiency of light can be improved. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2003282942A

公开(公告)日：2003-10-03

申请号：JP2002237443

申请日：2002-08-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： BIWA TSUYOSHI ,  OKUYAMA HIROYUKI ,  DOI MASATO ,  OHATA TOYOJI

IPC: H01L33/08 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor device, as well as its manufacturing method, that has excellent characteristics even when its device architecture is turned into three dimensions due to, e.g. selective growth, etc. SOLUTION: The nitride semiconductor device has a side face part 16s and a top layer part 16t, and an electrode layer 21 is built, through a high-resistance region such as an undoped gallium nitride layer 17, etc., onto the top layer part that is a crystal layer having grown to be a three-dimensional form. By having a high-resistance region at the top layer part 16t, current flows so that it detours around the high-resistance region of the top layer part 16t, thus establishing a current path that keeps off the tip layer part 16t, mainly passing the side face part 16s. As a result, a current flow through the top layer part 16t that has poor crystallizability is controlled. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种氮化物半导体器件及其制造方法，其具有优异的特性，即使其器件结构由于例如三维而变成三维也是如此。 选择性生长等。解决方案：氮化物半导体器件通过诸如未掺杂的氮化镓层17的高电阻区域具有侧面部分16s和顶层部分16t以及电极层21， 等等，形成为已经生长为三维形式的晶体层的顶层部分。 通过在顶层部分16t处具有高电阻区域，电流流动，使其在顶层部分16t的高电阻区域周围绕行，从而建立了电流路径，其保持尖端层部分16t，主要通过 侧面部16s。 结果，控制了结晶性差的顶层部16t的电流。 版权所有（C）2004，JPO

公开(公告)号：JP2003198062A

公开(公告)日：2003-07-11

申请号：JP2001395479

申请日：2001-12-26

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  DOI MASATO ,  BIWA TSUYOSHI ,  OHATA TOYOJI

IPC: H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser element of a structure which is excellent in reproducibility concerning production of an element. SOLUTION: In the structure of the semiconductor laser element, an active layer extending along a crystal surface tilted against a principal surface of a substrate is supported between a first conductive semiconductor layer and a second conductive semiconductor layer, and an end surface almost vertical to the crystal surface is made a resonant surface and an emitting area is made a part of an area in a tilted surface of the active layer. As a result, a variation in emission wave length can be controlled. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003124512A

公开(公告)日：2003-04-25

申请号：JP2001312207

申请日：2001-10-10

Applicant: SONY CORP

Inventor： OHATA TOYOJI

IPC: G09F9/33 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having good light emitting efficiency by setting the electrode forming position to solve the problems that when an electrode is formed by avoiding a region having a low crystallinity of a semiconductor light emitting element having a slope crystal layer inclined to the main surface of a substrate, when electrodes are not formed near the upper part of a too and near a bottom, the ratio of a light not reflected in a light extracting direction by the electrode of the light generated from the light emitting region is raised, as a result, even when the light emitting efficiency is raised by forming the electrode only on the region having good crystallinity, the light extracting efficiency cannot be raised and the effect of using only the region having the good crystallinity as the light emitting region cannot be sufficiently obtained. SOLUTION: The semiconductor light emitting element comprises electrodes formed halfway on the slope crystal surface as a light emitting region formed on the region having good crystallinity, and formed at a position for efficiently reflecting a generated light, thereby raising the light emitting efficiency of the entire light emitting element.

公开(公告)号：JP2002261335A

公开(公告)日：2002-09-13

申请号：JP2001200113

申请日：2001-06-29

Applicant: SONY CORP

Inventor： IWABUCHI TOSHIAKI ,  OHATA TOYOJI ,  DOI MASATO

IPC: G09F9/30 ,  G09F9/33 ,  G09F9/35 ,  H01L21/20 ,  H01L21/60 ,  H01L21/68 ,  H01L21/77 ,  H01L25/075 ,  H01L27/12 ,  H01L27/15 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/40 ,  H01L33/48 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide an image display device which is superior in various characteristics, such as resolution, image quality and light emission efficiency, and in which an image can be enlarged easily and manufacturing cost can be reduced, and to provide the manufacturing method. SOLUTION: In the image display device, a plurality of light-emitting elements are arranged and the image is displayed corresponding to a prescribed image signal. The occupancy area of one light-emitting elements is set to 25 μm to 10,000 μm , and it is mounted on a wiring substrate. At mounting, the enlargement transfer of two stages, which is a first transfer process for transferring the elements, so that they are detached much more than a state where the elements are arranged on a first substrate and holding them in a temporary holding member and a second transfer process for detaching the elements held by the temporary holding member much more and transferring them on a second substrate, is performed. A crystal growth layer, formed by the crystal growth of the light-emitting element, is mounted on the wiring substrate, so that it is inverted from that at the time of crystal growth in the normal direction of a substrate main face.

公开(公告)号：JP2002261327A

公开(公告)日：2002-09-13

申请号：JP2001061174

申请日：2001-03-06

Applicant: SONY CORP

Inventor： DOI MASATO ,  OKUYAMA HIROYUKI ,  BIWA TSUYOSHI ,  OHATA TOYOJI

IPC: C23C16/34 ,  H01L21/20 ,  H01L21/205 ,  H01L21/762 ,  H01L21/764 ,  H01L33/22 ,  H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element in which elements can be separated with proper reproducibility, even if selection growth is realized and to provide the manufacturing method. SOLUTION: In the semiconductor light-emitting element, a first growth layer 12 is formed on a growth substrate 11, a growth inhibition film 14 is formed on the first growth layer 12, and a second growth layer is formed by selection growth from an opening part made in the growth inhibiting film 14. An element separation groove for separating elements 13 is formed in the first growth layer 12, formed on the growth substrate 11. Selection growth is performed, after the element separation groove 13 has been formed.

公开(公告)号：JP2002182580A

公开(公告)日：2002-06-26

申请号：JP2000382759

申请日：2000-12-15

Applicant: SONY CORP

Inventor： IWABUCHI TOSHIAKI ,  YANAGISAWA YOSHIYUKI ,  OHATA TOYOJI ,  DOI MASATO

IPC: G02F1/1368 ,  G09F9/00 ,  H01L21/02 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  H01L33/32 ,  H01L33/48 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide such a selective transfer method of elements which prevents the impairment of positioning accuracy even after transfer and does not degrade the yield of transfer in transferring the finely worked elements and a method of manufacturing image display device. SOLUTION: The elements, such as plural light emitting diodes 42 and thin- film transistors for liquid crystal display, are formed on a first substrate 41 and thereafter portions of the elements among the plural elements are selectively peeled from the first substrate by element holding layers (thermoplastic resin layers 44) capable of holding the elements by plastic deformation and the respective elements are selectively transferred to a second substrate 43. In the selective transfer, the positions where the elements are held are exactly held by the plastic deformation of the element holding layers and therefore the improvement in the yield is made possible.