公开(公告)号：JP2013033930A

公开(公告)日：2013-02-14

申请号：JP2012111478

申请日：2012-05-15

Applicant: Sumitomo Electric Ind Ltd ,  住友電気工業株式会社 ,  Sony Corp ,  ソニー株式会社

Inventor： SHIOYA YOHEI ,  YOSHIZUMI YUSUKE ,  KYONO TAKASHI ,  SUMITOMO TAKAMICHI ,  UENO MASANORI ,  YANASHIMA KATSUNORI ,  TASAI KUNIHIKO ,  NAKAJIMA HIROSHI

IPC: H01S5/343

CPC classification number: H01L33/14 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0421 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

Abstract: PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor element including a p-type contact layer without destroy in crystallinity and having a comparatively small contact resistance and comparatively high carrier concentration, and provide a manufacturing method of the group III nitride semiconductor element.SOLUTION: A group III nitride semiconductor element comprises: a contact layer 25a provided on a luminescent layer 17; a contact layer 25b provided on the contact layer 25a and directly contacting the contact layer 25a; and an electrode 37 provided on the contact layer 25b and directly contacting the contact layer 25b. The contact layer 25a and the contact layer 25b are composed of the same p-type gallium nitride-based semiconductors. A p-type dopant concentration of the contact layer 25a is lower than a p-type dopant concentration of the contact layer 25b. A boundary face J1 between the contact layer 25a and the contact layer 25b inclines at an angle of 50 degrees and over to less than 130 degrees with respect to a surface Sc orthogonal to a reference axis Cx extending along a c axis. A film thickness of the contact layer 25b is 20 nm and under.

Abstract translation: 要解决的问题：为了提供包括p型接触层的III族氮化物半导体元件，其结晶度不破坏，并且具有相对较小的接触电阻和较高的载流子浓度，并且提供III族氮化物的制造方法 半导体元件。 解决方案：III族氮化物半导体元件包括：设置在发光层17上的接触层25a; 设置在接触层25a上并直接接触接触层25a的接触层25b; 以及设置在接触层25b上并直接接触接触层25b的电极37。 接触层25a和接触层25b由相同的p型氮化镓系半导体构成。 接触层25a的p型掺杂剂浓度低于接触层25b的p型掺杂剂浓度。 接触层25a和接触层25b之间的边界面J1相对于与沿着c轴延伸的基准轴Cx正交的面Sc倾斜50度以上且小于130度。 接触层25b的膜厚为20nm以下。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2007297247A

公开(公告)日：2007-11-15

申请号：JP2006127422

申请日：2006-05-01

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SHIOMI HARUNORI ,  MIYASHITA HIROKO ,  YANASHIMA KATSUNORI

IPC: C30B29/10 ,  C23C14/06 ,  C30B1/02 ,  H01L21/363

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an oxycalcogenide-based semiconductor single crystal thin film by which the oxycalcogenide-based semiconductor single crystal thin film excellent in crystallinity can be formed on a large-area substrate.
SOLUTION: A non-single crystal AMOX-based thin film 12 (wherein, A is at least one element selected from the group consisting of lanthanoids and Y; M is at least one element selected from the group consisting of Cu and Cd; X is at least one element selected from the group consisting of S, Se and Te) is formed on the substrate 11. At least a part of the surface of the thin film is covered with powders consisting of a material containing at least one element selected from the group consisting of A, M and X. A pressed powder compact 17 obtained by pressing the powders is annealed in vacuum or an inert gas atmosphere and then a single crystal AMOX-based thin film is formed by crystallizing the non-single crystal AMOX-based thin film 12.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种形成基于氧化物半胱氨酸盐的半导体单晶薄膜的方法，通过该方法可以在大面积基板上形成结晶度优异的氧化碳化物系半导体单晶薄膜。 解决方案：非单晶AMOX基薄膜12（其中，A为选自镧系元素和Y的至少一种元素; M为选自Cu和Cd中的至少一种元素 ; X是选自S，Se和Te中的至少一种元素）形成在基底11上。薄膜表面的至少一部分用包含至少一种元素的材料 选自由A，M和X组成的组。通过压制粉末获得的压制粉末17在真空或惰性气体气氛中退火，然后通过使非单晶结晶化而形成单晶AMOX基薄膜 AMOX型薄膜12.版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006222225A

公开(公告)日：2006-08-24

申请号：JP2005033466

申请日：2005-02-09

Applicant: SONY CORP

Inventor： OKANO NOBUKATA ,  SHIOMI HARUNORI ,  KAZETAGAWA MUNEYUKI ,  OMAE AKIRA ,  ARIMOCHI SUKEYUKI ,  AMI TAKAAKI ,  YANASHIMA KATSUNORI ,  NARUI HIRONOBU

IPC: H01S5/343 ,  H01L21/324

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a p-type nitride semiconductor capable of activating p-type impurities while controlling the shortage of nitrogen, and to provide a method of manufacturing a semiconductor apparatus using it. SOLUTION: After forming a nitride semiconductor 12 including p-type impurities, the p-type impurities are activated by heat treatment in atmosphere containing such a halogenated nitrogen gas as NF 3 . Since the halogenated nitrogen gas is decomposed at low temperature of 200°C or less so that nitrogen and halogen may be produced, the discharge of hydrogen can be promoted by making halogen draw hydrogen contained in the nitride semiconductor 12, while enabling it to suppress the coming-off of nitrogen from the nitride semiconductor 12 caused by nitrogen. Therefore, the p-type impurities can be activated, while controlling the shortage of nitrogen. COPYRIGHT: (C)2006,JPO&NCIPI

公开(公告)号：JP2005203248A

公开(公告)日：2005-07-28

申请号：JP2004008848

申请日：2004-01-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YASUDA TOSHIKAZU ,  MEMESAWA SATOHIKO ,  KAZETAGAWA MUNEYUKI ,  OMAE AKIRA ,  YANASHIMA KATSUNORI

IPC: H05B33/10 ,  C23C14/24 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide a vapor deposition method and a vapor deposition device wherein by suppressing adhesion and accumulation of vapor deposition materials in a vacuum chamber to the minimum, vapor deposition film of homogeneous film-thickness and high-purity can be formed while keeping utilization efficiency and film-forming rate of the vapor deposition materials high, and on that occasion, wherein an amorphous organic compound film having smooth surface characteristic and a multi-component vapor deposition film can be fabricated. SOLUTION: In the vacuum chamber 1, the substrate 3 and the vapor deposition source 5 are opposed, and at the vapor deposition source 5, an introduction part 11 of a gas 15 and a gas flow passage 12 which penetrates the center part of the vapor deposition source 5 from the lower part to the upper part are installed, and a gas flow 10 which goes from the vapor deposition source 5 into the direction of the substrate 3 is formed, and vapor molecules of the vapor deposition material discharged from the vapor deposition source 5 along the gas flow passage 10 is brought about to the substrate 3. Furthermore, a peripheral wall of a container 5b to house the vapor deposition material 5a is installed in a protruded state, and this peripheral wall protruding part 20 is controlled in a temperature in which the vapor deposition material 5a is not accumulated, and the vapor molecules are made to function as a barrier and a guide to guide the vapor molecules toward the substrate 3. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种气相沉积方法和气相沉积装置，其中通过将真空室中的气相沉积材料的粘附和积聚抑制到最小的膜厚度和高纯度罐的蒸镀膜 同时保持蒸镀材料的利用效率和成膜速度，同时能够制造具有光滑表面特性的非晶有机化合物膜和多成分气相沉积膜的场合。 解决方案：在真空室1中，基板3和气相沉积源5相对，并且在气相沉积源5处，气体15的引入部分11和穿过中心部分的气体流路12 从下部到上部安装气相沉积源5，并且形成从气相沉积源5进入基板3的方向的气流10，并将蒸气分子从 沿着气体流路10的气相沉积源5到达基板3.此外，容纳蒸镀材料5a的容器5b的周壁以突出的状态设置，该周壁突出部20为 控制在气相沉积材料5a不积聚的温度下，并且使蒸气分子作为阻挡层和用于将蒸汽分子引向衬底3的引导件。版权所有（（ C）2005，JPO＆NCIPI

公开(公告)号：JP2005024798A

公开(公告)日：2005-01-27

申请号：JP2003188923

申请日：2003-06-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SUZUKI KENJI ,  NARUI HIRONOBU ,  YANASHIMA KATSUNORI

IPC: G02B27/02 ,  H04N5/64

Abstract: PROBLEM TO BE SOLVED: To provide a head mount display which is small-sized and whose cost is low.
SOLUTION: In the display, a display unit 2 mounted on user's head is provided with a micro display 5 such as reflection type liquid crystal display and an image forming lens 6 for forming an image on retinas 21 of the user. A light source unit 3 is provided with light emission diodes 10R, 10G, 10B on a case 3a independent of the display unit 2. The display unit 2 is connected to the light source unit 3 by means of optical wiring 4. The light emitted from light emission diodes 10R, 10G, 10B is made incident on the optical wiring 4, is guided by the optical wiring 4 and the micro display 5 is irradiated with the light. Accordingly, by using the optical wiring 4, the light source unit 3 is separated and, therefore, the display unit 2 can be made small.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供小型的并且成本低的头戴式显示器。 解决方案：在显示器中，安装在用户头部上的显示单元2设置有诸如反射型液晶显示器的微型显示器5和用于在使用者的视网膜21上形成图像的图像形成透镜6。 光源单元3在独立于显示单元2的壳体3a上设置有发光二极管10R，10G，10B。显示单元2通过光布线4连接到光源单元3。 发光二极管10R，10G，10B入射到光配线4上，由光配线4引导，微显示器5被照射。 因此，通过使用光配线4，光源单元3被分离，因此可以使显示单元2变小。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004204289A

公开(公告)日：2004-07-22

申请号：JP2002374244

申请日：2002-12-25

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MEMESAWA SATOHIKO ,  YANASHIMA KATSUNORI ,  SASAKI KOJI ,  TANAKA SADAO ,  NARUI HIRONOBU

IPC: H05B33/10 ,  C23C14/06 ,  C23C14/24 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic EL panel, which prevents upsizing of the apparatus, and sequentially, effectively and adequately forms a film by a POVPD method and a vacuum deposition method.
SOLUTION: In a film-forming apparatus 100, a substrate 200 is held by a substrate holder 112 supported by a holder-rotating mechanism 113. When an organic layer is formed, an organic material in an organic raw material vessel 133 is heated and vaporized by a raw material heater 134, is mixed with a carrier gas from a carrier gas bomb 131, is discharged from an organic gas nozzle 138 into a chamber 111, and drift onto the surface of the substrate 200 that is directed to a gas nozzle. When an electrode layer or a sealing layer is formed, a film-forming material in a crucible 151 is vaporized by a crucible heater 152, and drifts toward the surface of the substrate 200 perpendicularly directed downward. The manufacturing method can form a plurality of layers with the different methods while keeping a sucked vacuum state in one chamber 111.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004146852A

公开(公告)日：2004-05-20

申请号：JP2004029739

申请日：2004-02-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve crystallinity and electric conductivity, and also to homogenize the composition ratio and p-type impurity concentration in a growth surface of a crystal. SOLUTION: Alternate stacking of a plurality of first and second layers 11 and 12, respectively, with each first layer 11 and each second layer 12 stacking one over another and subsequent heat-treatment yield third layers between the first layers 11 and second layers 12, wherein the first layers 11 are AlGaN mixed crystal approximately 1 to 100nm thick and second layers 12 are Mg-doped p-type GaN approximately 1 to 100 nm thick. The third layers contain aluminum in a lower concentration than the first layers and contain p-type impurity in a lower concentration than the second layers. It is feasible to form the third layers by forming the first and second layers that have different contents of aluminum and different concentrations of the p-type impurity from each other, through separate processes, and subsequently heat-treatment, whereby it is enabled to manufacture with facility a good-quality p-type group III nitride compound semiconductor having properties of p-type AlGaN mixed crystal as a whole. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004143521A

公开(公告)日：2004-05-20

申请号：JP2002309127

申请日：2002-10-24

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SASAKI KOJI ,  YANASHIMA KATSUNORI ,  NARUI HIRONOBU ,  MEMESAWA SATOHIKO

IPC: C23C14/12 ,  C23C14/22 ,  C23C14/24 ,  C23C14/26 ,  C23C16/455 ,  H01L51/50 ,  H05B33/10 ,  H05B33/14

CPC classification number: C23C14/225 ,  C23C14/12 ,  C23C14/228 ,  C23C14/26 ,  H05B33/10

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film deposition device for depositing an organic thin-film having uniform thickness on a substrate.
SOLUTION: The thin-film deposition device includes a vacuum chamber 11, a substrate holder 12 provided in the vacuum chamber 11, and a tubular gas supply end 22 that supplies gas toward a substrate mounting-face 12a on the substrate holder 12. The gas supply end 22 includes therein a plurality of barriers 42 that blocks the gas supply end 22 toward a gas supply port 21 of the gas supply end 22. Each of the barriers 42 is provided with a plurality of apertures 41.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004055401A

公开(公告)日：2004-02-19

申请号：JP2002213004

申请日：2002-07-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SASAKI KOJI ,  NARUI HIRONOBU ,  YANASHIMA KATSUNORI ,  TANAKA SADAO ,  MEMESAWA SATOHIKO

IPC: H05B33/10 ,  C23C14/04 ,  C23C14/12 ,  C23C14/24 ,  H01L51/40 ,  H01L51/50 ,  H01L51/56 ,  H05B33/14

CPC classification number: C23C14/24 ,  C23C14/042 ,  C23C14/12 ,  C23C14/228 ,  H01L51/001 ,  H01L51/56

Abstract: PROBLEM TO BE SOLVED: To decide an arrangement of a board in a chamber by considering various conditions for forming a high-quality organic film.
SOLUTION: A material gas is produced by evaporating or sublimating an organic material 11 in evaporation/sublimation chambers 4. A carrier gas is mixed in the material gas, and transported to a chamber 2 through transport pipes 5. A board 3 is held in a vertical form in the chamber 2, injectors 17 of the transport pipes 5 face to the the board 3 and spray the material gas on the board 3 in a direction perpendicular to it. By holding the board 3 in the vertical form, particles drop without adhering to the board, and flexures of the board 3 and a mask for selectively painting pixels can be restrained. Thus, generation of defects is prevented, and the high-quality organic film having an equalized film distribution can be formed.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004031181A

公开(公告)日：2004-01-29

申请号：JP2002187073

申请日：2002-06-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MEMESAWA SATOHIKO ,  TANAKA SADAO ,  YANASHIMA KATSUNORI ,  NARUI HIRONOBU ,  SASAKI KOJI

IPC: H05B33/10 ,  C23C14/04 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide a pattern film forming device capable of forming a pattern film with favorable positional accuracy by arranging a mask formed in a thin film on the surface of a wafer with high precision, and to provide a pattern film forming method.
SOLUTION: The pattern film forming device comprises a wafer holding means 3 vertically holding the wafer W, a mask holding means 5 holding a mask M on the main surface side of the wafer W held by the wafer holding means 3 in a state of being pulled by tension applied in the direction rectangular to the mask M, a position detecting means 7 detecting the positional relation of the wafer W held by the wafer holding means 3 and the mask M held by the mask holding means 5, and an alignment means 9 moving the wafer holding means 3 so as to adjust the wafer W and the mask M into a prescribed positional relation.
COPYRIGHT: (C)2004,JPO