公开(公告)号：DE69801612T2

公开(公告)日：2002-06-20

申请号：DE69801612

申请日：1998-05-14

Applicant: SONY CORP

Inventor： MACHIDA AKIO ,  NAGASAWA NAOMI ,  AMI TAKAAKI ,  SUZUKI MASAYUKI

IPC: C30B29/22 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L21/02

Abstract: It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity.

公开(公告)号：DE69801612D1

公开(公告)日：2001-10-18

申请号：DE69801612

申请日：1998-05-14

Applicant: SONY CORP

Inventor： MACHIDA AKIO ,  NAGASAWA NAOMI ,  AMI TAKAAKI ,  SUZUKI MASAYUKI

IPC: C30B29/22 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L21/02

Abstract: It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity.

公开(公告)号：DE69606123T2

公开(公告)日：2000-08-24

申请号：DE69606123

申请日：1996-08-20

Applicant: SONY CORP

Inventor： AMI TAKAAKI ,  HIRONAKA KATSUYUKI ,  IKEDA YUJI

IPC: C01G29/00 ,  C01G33/00 ,  C01G35/00 ,  C04B35/453 ,  C04B35/495 ,  C23C14/08 ,  C23C16/40 ,  C23C16/56 ,  H01G4/12 ,  H01L21/822 ,  H01L27/04 ,  C04B35/00

Abstract: The formation of an electrically conductive phase in an dielectric or ferroelectric composed of a bismuth compound is inhibited. Described is a process for producing a bismuth compound, which comprises introducing a gas of starting materials in an atmosphere under a pressure of 0.01 to 50 torr, depositing a precursor of a bismuth compound on a substrate, and thermally treating it in an oxidizing atmosphere.

公开(公告)号：DE69606123D1

公开(公告)日：2000-02-17

申请号：DE69606123

申请日：1996-08-20

Applicant: SONY CORP

Inventor： AMI TAKAAKI ,  HIRONAKA KATSUYUKI ,  IKEDA YUJI

IPC: C01G29/00 ,  C01G33/00 ,  C01G35/00 ,  C04B35/453 ,  C04B35/495 ,  C23C14/08 ,  C23C16/40 ,  C23C16/56 ,  H01G4/12 ,  H01L21/822 ,  H01L27/04 ,  C04B35/00

Abstract: The formation of an electrically conductive phase in an dielectric or ferroelectric composed of a bismuth compound is inhibited. Described is a process for producing a bismuth compound, which comprises introducing a gas of starting materials in an atmosphere under a pressure of 0.01 to 50 torr, depositing a precursor of a bismuth compound on a substrate, and thermally treating it in an oxidizing atmosphere.

公开(公告)号：JP2007116097A

公开(公告)日：2007-05-10

申请号：JP2006215342

申请日：2006-08-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMAE AKIRA ,  SHIOMI HARUNORI ,  KAZETAGAWA MUNEYUKI ,  AMI TAKAAKI ,  MIYAJIMA TAKAO ,  HIRAMATSU YUJI ,  HATADA IZUHO ,  OKANO NOBUKATA ,  TOMITANI SHIGETAKA ,  YANASHIMA KATSUNORI ,  HINO TOMOKIMI ,  NARUI HIRONOBU

IPC: H01L33/08 ,  C30B29/38 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32

CPC classification number: H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting diode which emits light efficiently and which can be manufactured at low costs by a single epitaxial growth, and to provide a manufacturing method of the same. SOLUTION: A substrate 11 having a plurality of protrusions 12 is formed on one main surface of the substrate 11 such as a sapphire substrate wherein the protrusion 12 is made of a material different in type from that of the substrate, an SiO 2 film e.g., and a first nitride-based group III-V compound semiconductor layer 15 is grown on each recess 13 between the protrusions 12 until making a triangle in section wherein a bottom surface of the recess becomes a base of the triangle. Thereafter, a second nitride-based group III-V compound semiconductor layer 15 is laterally grown on the substrate from the first nitride-based group III-V compound semiconductor layer 15. The protrusions 12 are triangular or trapezoidal e.g. in section. On the second nitride-based group III-V compound semiconductor layer 15, a third nitride-based group III-V compound semiconductor layer 15 including an active layer and a nitride-based group III-V compound semiconductor layer 15 are formed. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种有效发光并且可以通过单次外延生长以低成本制造的发光二极管，并提供其制造方法。 解决方案：具有多个突起12的基板11形成在诸如蓝宝石基板的基板11的一个主表面上，其中突起12由与基板不同的材料制成， SB> 2 膜，并且在突起12之间的每个凹部13上生长第一氮化物基III-V族化合物半导体层15，直到形成三角形，其中凹部的底表面成为基底 的三角形。 此后，第二氮化物基III-V族化合物半导体层15从第一氮化物基III-V族化合物半导体层15横向生长在衬底上。突起12是三角形或梯形的。 在部分。 在第二氮化物基III-V族化合物半导体层15上，形成包括有源层和氮化物基III-V族化合物半导体层15的第三氮化物基III-V族化合物半导体层15。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006108202A

公开(公告)日：2006-04-20

申请号：JP2004289544

申请日：2004-10-01

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SETO MASAHIRO ,  INOUE TOMOKO ,  KURAMOCHI NAOYOSHI ,  HITSUDA YUKIHISA ,  OKANO NOBUKATA ,  SHIOMI HARUNORI ,  MIYAJIMA TAKAO ,  AMI TAKAAKI

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing light emitting element by which the yield of a light emitting element can be improved by reducing the influence of the warping of a substrate caused by epitaxial growth. SOLUTION: The method of manufacturing the light emitting element includes an epitaxial growth step of adhering a film to the surface of the substrate through epitaxial growth, a flattening step of flattening the rear surface of the substrate by grinding after the epitaxial growth step, and a substrate treating step of performing prescribed treatment to the surface of the substrate after the flattening step. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种制造发光元件的方法，通过减少由外延生长引起的基板翘曲的影响，可以提高发光元件的产量。 解决方案：制造发光元件的方法包括外延生长步骤，其通过外延生长将膜粘附到衬底的表面;平坦化步骤，在外延生长步骤之后通过研磨来平坦化衬底的后表面 以及在平坦化工序后对基板的表面进行规定处理的基板处理工序。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005332845A

公开(公告)日：2005-12-02

申请号：JP2004147198

申请日：2004-05-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SHIOMI HARUNORI ,  AMI TAKAAKI ,  SETO MASAHIRO ,  OKANO NOBUKATA ,  KURAMOCHI NAOYOSHI ,  HITSUDA YUKIHISA ,  INOUE TOMOKO

IPC: C23C16/34 ,  H01L21/20 ,  H01L21/205 ,  H01L21/268 ,  H01S5/042 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor element by which a low-resistance p-type nitride semiconductor layer can be obtained without diffusing a p-type dopant and thereby such a nitride semiconductor element can be fabricated that has good characteristics with a very precisely controlled dopant concentration profile in the depthwise direction.
SOLUTION: All of a p-type cap layer 6, a p-type clad layer 7, a p
- -type contact layer 8, and a p
+ -type contact layer 9 which consist of a crystalline nitride semiconductor, already contain a p-type dopant, and are formed in this order. By irradiating laser light (ν) on these p-type nitride semiconductor layers 6-9, the p-type dopants contained therein are activated. The laser light (ν) has a photon energy higher than a binding energy between the p-type dopants contained in the nitride semiconductor layers 6-9 and hydrogen. It is preferred that the laser light (ν) is irradiated at a pulse width of 1 μsec or less.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种制造氮化物半导体元件的方法，通过该方法可以获得低电阻p型氮化物半导体层而不扩散p型掺杂剂，由此可以制造这种氮化物半导体元件 其具有在深度方向上具有非常精确控制的掺杂剂浓度分布的良好特性。 解决方案：所有的p型覆盖层6，p型覆盖层7，ap - 型接触层8和ap + / SP>型 由结晶氮化物半导体构成的接触层9已经含有p型掺杂剂，并且依次形成。 通过在这些p型氮化物半导体层6-9上照射激光（ν），其中包含的p型掺杂剂被激活。 激光（ν）具有高于氮化物半导体层6-9中包含的p型掺杂剂和氢之间的结合能的光子能量。 优选以1μsec以下的脉冲宽度照射激光（ν）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2000281494A

公开(公告)日：2000-10-10

申请号：JP8492199

申请日：1999-03-26

Applicant: SONY CORP

Inventor： AMI TAKAAKI ,  ISHIDA YUICHI ,  NAGASAWA NAOMI ,  SUZUKI MASAYUKI ,  MACHIDA AKIO

IPC: H01L21/8247 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B33/02 ,  H01L21/302 ,  H01L21/314 ,  H01L21/316 ,  H01L21/461 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To realize an epitaxial rare earth oxide (110)/silicon (001) structure by well epitaxially growing a rare earth oxide such as cerium oxide of the (110) face orientation on a silicon substrate of the (001) face orientation at a lower growth temperature than that of a conventional method. SOLUTION: The surface of an Si substrate 1 of the (001) face orientation is converted into a dimer structure by surface reconstruction of 2×1 and 1×2 and a raw material comprising at least one or more kinds of rare earth elements is used in an atmosphere containing an oxidizing gas to epitaxially grow a cubic or a tetragonal rare earth oxide, e.g. a CeO2 membrane 2 of the (110) face orientation. At the time of the growth, the feed of the oxidizing gas to the surface of the Si substrate 1 is started and the feed of the raw material comprising at least the one or more kinds of the rate earth elements is then carried out.

公开(公告)号：JP2000236075A

公开(公告)日：2000-08-29

申请号：JP3481599

申请日：1999-02-12

Applicant: SONY CORP

Inventor： HIRONAKA KATSUYUKI ,  SUGIYAMA MASATAKA ,  ISOBE CHIHARU ,  AMI TAKAAKI

IPC: H01L21/8247 ,  C23C16/40 ,  H01L21/02 ,  H01L21/311 ,  H01L21/314 ,  H01L21/3213 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To obtain a dielectric capacitor of good characteristics even when an area of a dielectric capacitor is reduced when manufacturing a dielectric capacitor, wherein the dielectric film of a perovskite type crystal structure is used or a semiconductor memory with such a dielectric capacitor. SOLUTION: When a dielectric capacitor wherein an SBT film is used as a dielectric film is manufactured, an IrO2 film 2 and an Ir film 3 as a lower electrode, an amorphous film 4 as the precursor film of an SBT film, and a Pt film 5 as an upper electrode are formed on an Si substrate 1 one by one. After the Pt film 5, the amorphous film 4, the Ir film 3 and the IrO2 film 2 are subjected to patterning into a shape of a dielectric capacitor and the amorphous film 4 is subjected to heat treatment. Thereby, an SBT film 6 is obtained by making phase change for an amorphous phase in the amorphous film 4 into a crystal phase of a perovskite type crystal structure.

公开(公告)号：JPH02233522A

公开(公告)日：1990-09-17

申请号：JP5565989

申请日：1989-03-08

Applicant: SONY CORP

Inventor： SUZUKI MASAYUKI ,  AMI TAKAAKI ,  MORI YOSHIFUMI

IPC: C01G3/00 ,  H01C7/10 ,  H01C10/30

Abstract: PURPOSE:To obtain an oxide material having largely varying electrical resistance at low temperature according to the applied voltage by using Sr, Ca, Ba, Cu and O as essential components of the oxide. CONSTITUTION:SrCO3, CuO and, as necessary. CaO and BaCO3 are mixed in a ball mill, calcined at about 900 deg.C in an oxidizing atmosphere, crushed, formed and calcined at about 980 deg.C for about 15hr in an oxidizing atmosphere to obtain an oxide material of formula (0