公开(公告)号：JP2001101981A

公开(公告)日：2001-04-13

申请号：JP27950799

申请日：1999-09-30

Applicant: SONY CORP

Inventor： YASUDA ATSUSHI

IPC: H01J29/48 ,  H01J29/82

Abstract: PROBLEM TO BE SOLVED: To provide a color cathode-ray tube which minimizes the influence of a magnetic field from a deflection yoke to a electron gun in the color cathode-ray tube. SOLUTION: Provided is an electron gun 24 having a support spring 27 directly mounted on a final stage electrode G6 forming a main electronic lens with no shiled cups, and a deflection yoke 25 disposed at a tube body 22.

公开(公告)号：JP2001243873A

公开(公告)日：2001-09-07

申请号：JP2000053008

申请日：2000-02-29

Applicant: SONY CORP

Inventor： YASUDA ATSUSHI

IPC: H01J3/02 ,  H01J1/308 ,  H01J3/30 ,  H01J29/04 ,  H01J29/48 ,  H01J29/74 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide an electron emission device wherein the deflection factor of electrons emitted from an electron emission region is less dependent on the position of the electron emission region. SOLUTION: The electron emission device comprises (a) an electron emission region 10 having an electron emission part 12 for emitting electrons into a vacuum and (b) a first electrode 21 and a second electrode 22 opposed to each other with the electron emission region 10 held therebetween, the electron emission part 12 being shifted to the first electrode 21.

公开(公告)号：JPH11219666A

公开(公告)日：1999-08-10

申请号：JP21945798

申请日：1998-08-03

Applicant: SONY CORP

Inventor： YASUDA ATSUSHI

IPC: H01J29/07 ,  H01J31/20

Abstract: PROBLEM TO BE SOLVED: To reduce video moire without deteriorating resolution and to improve picture quality by providing a spot size with the moire modulation factor smaller than a specific value, and providing an aperture grille pitch with the moire wavelength smaller than a specific value. SOLUTION: When an aperture grille is used as a color selecting mechanism, it has a spot size with the moire modulation factor smaller than 0. 6, and it has an aperture grille pitch with the moire wavelength smaller than 5 mm. The aperture grille pitches corresponding to positions on a fluorescent screen are distributed in the relation a

公开(公告)号：JP2006190854A

公开(公告)日：2006-07-20

申请号：JP2005002075

申请日：2005-01-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YASUDA ATSUSHI ,  HINO TOMOKIMI ,  KAWASAKI TAKAHIKO

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/22 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44

Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode which can improve light emitting efficiency and an optical output. SOLUTION: The light emitting diode is provided with a plurality of laminated semiconductors 10 including an active layer 4 on a substrate 1. In each of the laminated semiconductors 10, a processing surface 12 on its one side becomes a light emitting surface. A reflection metallic layer 8 is formed on a processing surface on the opposite side to the one side, and it comprises a light reflection surface 11. The laminated semiconductors 10 are arranged on the substrate 1 in a manner that the light reflection surfaces 11 of the respective laminated semiconductors 10 may be opposite to the light emitting surfaces of the other laminated semiconductors. An internal reflection layer 2 is formed between the laminated semiconductor 10 and the substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种可以提高发光效率和光输出的发光二极管。 解决方案：发光二极管在基板1上设置有包括有源层4的多个层叠半导体10.在每个层叠半导体10中，其一侧的处理表面12成为发光面。 反射金属层8形成在与一侧相反的一侧的处理用面上，具有光反射面11.叠层半导体10以这样的方式配置在基板1上， 各层叠半导体10可以与其他层叠半导体的发光面相反。 在层叠半导体10和基板1之间形成内反射层2.版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2002075168A

公开(公告)日：2002-03-15

申请号：JP2000259561

申请日：2000-08-29

Applicant: SONY CORP

Inventor： YASUDA ATSUSHI

IPC: H01J9/02 ,  H01J1/308 ,  H01J29/04 ,  H01L29/66 ,  H01L29/80

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a junction semiconductor device which forms a shallow p-n junction and has low sheet resistance. SOLUTION: In this manufacturing method, a buffer film 21, such as a thermal oxide film or the like, is formed on a P-type silicon substrate 12, then a mask 22 is covered on the buffer film 21. A high-density P-type domain 14 is formed in the substrate by means of an ion-implantation through the mask 22, and the buffer film is removed and a second buffer film 24 such as a thermal oxide film or the like, is formed. Additionally, by means of an ion-implantation through the second buffer film, a first N-type region 16 and a second dash N-type region 17 are formed, then a mask 26 is produced on the second buffer film 24, and also by means of a ion- implantation through the mask, a second N-type region is converted to a second N-type region 18 having high impurity density and low sheet resistance. Consequently, the second N-type region 18, with low sheet resistance is formed, without change in the junction depth, and further, the electron emission element and the display device having high efficiency are obtained, by using this junction semiconductor as an electron emission element.