-
公开(公告)号：DE112018001162T5
公开(公告)日：2019-12-05
申请号：DE112018001162
申请日：2018-03-06
Applicant: SONY CORP , SONY SEMICONDUCTOR SOLUTIONS CORP
Inventor： SUGIYAMA TAKAAKI , KIKUCHI KEN , YASUDA ATSUSHI , IMAI HIROKAZU , TOBITA HIROSHI
Abstract: Eine Anzeigeeinrichtung entsprechend einer Ausführungsform der vorliegenden Offenbarung weist Folgendes auf: ein Anzeigefeld, mehrere Pixel aufweisend; und eine Ansteuerungsvorrichtung, die ein Ansteuerungssignal an das Anzeigefeld ausgibt. Das Ansteuerungssignal veranlasst eines der Pixel, durch ein aktives PWM-Ansteuerungsverfahren in einer 1-Rahmen-Periode viele Male Licht zu emittieren.
-
公开(公告)号：JP2010287637A
公开(公告)日：2010-12-24
申请号：JP2009138745
申请日：2009-06-10
Inventor： OHASHI TATSUO , OMAE AKIRA , YASUDA ATSUSHI
IPC: H01L33/36
Abstract: PROBLEM TO BE SOLVED: To reduce current leak by forming a mesa structure without having to carry out etching. SOLUTION: The manufacturing method of a semiconductor light-emitting device includes a step of forming an n-type contact layer 12 on a substrate 11 by an epitaxial growth method; a step of forming an inorganic mask 21 on the n-type contact layer 12 which provides an opening 22 on the region; wherein a body part 16 is formed; a step of forming the body part 16 of mesa structure by forming an n-type layer 13, an active layer 14 and a p-type layer 15, in this order, on the n-type contact layer 12 in the opening 22 of the inorganic mask 21 by epitaxial growth method; a step of removing the inorganic mask 21; a step of forming an electrode forming layer 23 on the n-type contact layer 12 and on the surface of the body part 16; and a step of forming a p electrode 18 on the p-type layer 15; by forming an n electrode 17 on the n-type contact layer 12 by patterning the electrode forming layer 23. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：通过形成台面结构而不必进行蚀刻来减少电流泄漏。 解决方案：半导体发光器件的制造方法包括通过外延生长法在衬底11上形成n型接触层12的步骤; 在n型接触层12上形成无机掩模21的步骤，其在该区域上提供开口22; 其中形成主体部分16; 通过在该开口22中的n型接触层12上依次形成n型层13，有源层14和p型层15来形成台面结构的主体部分16的步骤 无机掩模21通过外延生长法; 去除无机掩模21的步骤; 在n型接触层12上和主体部16的表面上形成电极形成层23的工序; 以及在p型层15上形成p电极18的工序; 通过图案化电极形成层23，在n型接触层12上形成n电极17。（C）2011，JPO＆INPIT
-
公开(公告)号：JP2008227423A
公开(公告)日：2008-09-25
申请号：JP2007067724
申请日：2007-03-16
Inventor： OTOMO KOJI , AOYANAGI HIDEKAZU , FUJINO TOYOMI , YASUDA ATSUSHI
IPC: H01L33/50 , F21S2/00 , F21S8/04 , F21Y101/02 , G02F1/13357
CPC classification number: H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: PROBLEM TO BE SOLVED: To provide a light source device and a liquid crystal display device capable of improving electrostatic breakdown voltage of a light emitting element without damaging color mixing properties of each RGB color.
SOLUTION: The light source device 11 includes: an LED chip group 12 which is comprised of LED chips of each RGB color to produce white color by mixing each coloured light; protective elements 15G1, 15G2 and 15B which protect green and blue LED chips 12G1, 12G2 and 12B from electrostatic discharge damage of them; and a wiring board 13 mounted with these LED chip group and protective elements. The wiring board 13 is mounted with a plurality of sets of LED chip groups 12, and the protective elements are mounted at the place out of mixing regions of each color of the LED chip groups 12 in the wiring board. Thereby, without damaging color mixing properties of coloured lights emitted from the LED chips of each color, electrostatic breakdown voltage of the LED chips is improved.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：提供能够改善发光元件的静电击穿电压而不损害每种RGB颜色的混色特性的光源装置和液晶显示装置。 解决方案：光源装置11包括：LED芯片组12，其由每个RGB颜色的LED芯片组成，以通过混合每个有色光产生白色; 保护元件15G1,15G2和15B，其保护绿色和蓝色LED芯片12G1,12G2和12B免受它们的静电放电损坏; 以及安装有这些LED芯片组和保护元件的布线板13。 布线板13安装有多组LED芯片组12，并且保护元件安装在布线板中的LED芯片组12的各颜色的混合区域之外的位置处。 由此，不损害从各种颜色的LED芯片发出的有色光的混色特性，提高了LED芯片的静电击穿电压。 版权所有（C）2008，JPO＆INPIT
-
4.发明专利Formation method of metal thin film, and multilayer interconnection and thin-film substrate 审中-公开金属薄膜的形成方法，以及多层互连和薄膜基板
公开(公告)号：JP2006012975A
公开(公告)日：2006-01-12
申请号：JP2004185108
申请日：2004-06-23
Inventor： YASUDA ATSUSHI , SATO JUNICHI
IPC: H01L21/3205 , H01L23/52
Abstract: PROBLEM TO BE SOLVED: To provide a thin-film substrate equipped with the formation method of a metal thin film and multilayer interconnection, a metal thin film thus formed, and a thin film substrate with multilayer interconnection having high reliability, superior in electromigration resistance, and stress migration resistance, while maintaining degree of integration.
SOLUTION: A metal thin film 3 and a heat-absorbing layer 4 for absorbing thermal energy are formed on a substrate 1. By irradiating a first pulse laser beam E1 to the heat-absorbing layer 4, a first heat-treatment is carried out to the metal thin film 3 so as to perform recrystallization. By further making a second pulse laser beam E2 irradiated to the whole substrate surface, after the heat absorption layer 4 has been patterned into a predetermined shape, a second heat-treatment is carried out by the selective temperature distribution which has a high-temperature region and a low-temperature region with respect to the metal thin film 3. While maintaining a low-temperature region as a nucleus, recrystallization is performed to the metal thin film 3 in the mode based on the shape of the heat absorption layer 4, so that the metallic wiring can be formed, wherein grain boundary triple points is unlikely to exist.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：为了提供一种配备有金属薄膜和多层互连的形成方法的薄膜基板，由此形成的金属薄膜以及具有高可靠性的多层互连的薄膜基板， 同时保持整合度。 解决方案：在基板1上形成用于吸收热能的金属薄膜3和吸热层4.通过将第一脉冲激光束E1照射到吸热层4，第一热处理为 对金属薄膜3进行再结晶。 通过进一步制造照射到整个基板表面的第二脉冲激光束E2，在将吸热层4图案化为预定形状之后，通过具有高温区域的选择性温度分布进行第二热处理 和相对于金属薄膜3的低温区域。在保持作为核的低温区域的同时，以基于吸热层4的形状的方式对金属薄膜3进行再结晶，因此 可以形成金属布线，其中不可能存在晶界三重点。 版权所有（C）2006，JPO＆NCIPI
-
5.发明专利Semiconductor light-emitting element and semiconductor light-emitting element array 有权半导体发光元件和半导体发光元件阵列
公开(公告)号：JP2011211084A
公开(公告)日：2011-10-20
申请号：JP2010079294
申请日：2010-03-30
Inventor： OMAE AKIRA , YASUDA ATSUSHI
IPC: H01L33/50
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of forming a wavelength conversion structure, having a large Stokes shift in a chip, in a simple method, and to provide an array of the semiconductor light-emitting elements.SOLUTION: A chromaticity conversion layer 15 is formed on the upper surface of a pillar-like mesa part 16 which includes an active layer. The chromaticity conversion layer 15 is formed on the mesa part 16, at a position different from the position of a passage through which current is poured in the active layer by a lower electrode 35 and an upper electrode 31. The chromaticity conversion layer 15 has a multi quantum well structure formed, by alternately laminating a well layer and a barrier layer, with each being made of, for example, GaInN at a different composition ratio, so as to absorb the ultraviolet light emitted from the active layer and emit a light of a predetermined wavelength (in a red band, a green band, or a blue band).
Abstract translation: 要解决的问题：为了提供能够形成波长转换结构的半导体发光元件，以简单的方法在芯片中具有大的斯托克斯位移，并且提供半导体发光元件的阵列。解决方案： 色度转换层15形成在包括活性层的柱状台面部分16的上表面上。 色度转换层15形成在台面部分16的不同于通过下电极35和上电极31在有源层中注入电流的通道的位置的位置。色度转换层15具有 通过交替地层叠阱层和阻挡层而形成多量子阱结构，每个阱由不同的组成比例由GaInN制成，以便吸收从有源层发射的紫外光并发射 预定波长（红色波段，绿色波段或蓝色波段）。
-
Patent Agency Ranking
公开(公告)号：JP2007165726A
公开(公告)日：2007-06-28
申请号：JP2005362263
申请日：2005-12-15
Inventor： KOBAYASHI TOSHIMASA , WATABE YOSHIAKI , KURAMOCHI NAOYOSHI , HITSUDA YUKIHISA , YASUDA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting diode capable of improving light extraction efficiency. SOLUTION: In a first region 10A, a pn junction section 14 is composed of an n-type layer 12 and a p-type layer 13, and a p-side electrode 21 is formed on the p-type layer 13. A second region 10B includes a partial region of the n-type layer 12 and an n-side electrode 22 is provided. An inclined section 30 including one portion of the pn junction section 14 is provided at a boundary section 10C between both of them. A high reflection film 42 made of aluminum Al, silver Ag, and the like is provided at the inclined section 30, and light reaching the inclined section 30 is reflected by the high reflection film 42 and is extracted to the outside efficiently. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 解决的问题：提供能够提高光提取效率的半导体发光二极管。 解决方案：在第一区域10A中，pn结部分14由n型层12和p型层13构成，p侧电极21形成在p型层13上。 第二区域10B包括n型层12的部分区域和n侧电极22。 包括pn结部14的一部分的倾斜部30设置在两者之间的边界部10C。 由铝Al，银Ag等构成的高反射膜42设置在倾斜部分30处，并且到达倾斜部分30的光被高反射膜42反射并被有效地提取到外部。 版权所有（C）2007，JPO＆INPIT
-
公开(公告)号：JP2006352084A
公开(公告)日：2006-12-28
申请号：JP2006105647
申请日：2006-04-06
Applicant: SONY CORP
Inventor： OMAE AKIRA , TOMITANI SHIGETAKA , MAEDA YUUKI , SHIOMI HARUNORI , AMI TAKAAKI , MIYAJIMA TAKAO , YANASHIMA KATSUNORI , TANGE TAKASHI , YASUDA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode of significantly high light emitting efficiency that can be manufactured by one-time epitaxial growth at a low cost, and a manufacturing method thereof. SOLUTION: In a recess 11a formed on one main surface of a sapphire substrate 11, growth in a lateral direction is performed from a GaN layer 12, after burying the recess 11a by making the GaN layer 12 grow after passing through a state of a triangular cross section shape with its bottom face as a base. A light emitting diode structure is formed on the GaN layer 12 by growing a GaN based semiconductor layer including an active layer on the GaN layer 12. By using the GaN based light emitting diode, a light emitting diode backlight, etc. is manufactured. COPYRIGHT: (C)2007,JPO&INPIT
-
公开(公告)号：JP2003016922A
公开(公告)日：2003-01-17
申请号：JP2001194404
申请日：2001-06-27
Inventor： YASUDA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide an electron emitting device structure causing no electrification even when electrons emitted from an electron emission part collide. SOLUTION: This electron emitting device comprises (A) an electron emitting region 10 having an electron emission part 13 for emitting electrons in a vacuum, and a main part formed on a semiconductor substrate 11; and (B) a first deflecting electrode 31 and a second deflecting electrode 32 opposedly arranged with the electron emitting region 10 in between. The electrons emitted from the electron emission part 13 are deflected by applying positive electric potential higher than electric potential applied to the second deflecting electrode 32, to the first deflecting electrode 31. The first deflecting electrode 31 is disposed above the semiconductor substrate 11 through first and second insulating layers 21A, 22A, and at least a portion 121A of the first lower insulating layer 21A facing the electron emitting region 10 is covered with a conductive layer 40A.
Abstract translation: 要解决的问题：即使当从电子发射部分发射的电子碰撞时，也提供不引起电气化的电子发射器件结构。 解决方案：该电子发射器件包括（A）具有用于在真空中发射电子的电子发射部分13的电子发射区域10和形成在半导体衬底11上的主要部分; 和（B）第一偏转电极31和与其间的电子发射区10相对布置的第二偏转电极32。 从电子发射部分13发射的电子通过施加高于施加到第二偏转电极32的电位的正电位而偏转到第一偏转电极31.第一偏转电极31首先设置在半导体衬底11的上方， 第二绝缘层21A，22A以及面向电子发射区10的第一下部绝缘层21A的至少一部分121A被导电层40A覆盖。
-
公开(公告)号：JP2008270406A
公开(公告)日：2008-11-06
申请号：JP2007109153
申请日：2007-04-18
Inventor： NAKAMACHI KEIICHI , YASUDA ATSUSHI
IPC: H01L33/48 , F21S2/00 , F21Y101/02 , G02F1/13357
Abstract: PROBLEM TO BE SOLVED: To provide a light source substrate manufacturing method for manufacturing a light source substrate with high performance, while minimizing the number of processes and the amount of stock.
SOLUTION: The light source substrate manufacturing method including a wiring substrate and a plurality of chip shape light emitting diodes has a mounting process for directly mounting on the wiring substrate the light emitting diodes corresponding to data, which meet an extracting condition, based on optical characteristic data obtained by measuring each optical characteristic in the plurality of chip shape light emitting diodes arrayed on a wafer.
COPYRIGHT: (C)2009,JPO&INPITAbstract translation: 要解决的问题：提供一种用于制造具有高性能的光源基板的光源基板制造方法，同时最小化工艺数量和库存量。 解决方案：包括布线基板和多个芯片形状的发光二极管的光源基板的制造方法具有直接安装在布线基板上的与基于提取条件的数据相对应的发光二极管的安装处理 关于通过测量排列在晶片上的多个芯片形状发光二极管中的每个光学特性而获得的光学特性数据。 版权所有（C）2009，JPO＆INPIT
-
公开(公告)号：JP2007165725A
公开(公告)日：2007-06-28
申请号：JP2005362262
申请日：2005-12-15
Inventor： KOBAYASHI TOSHIMASA , WATABE YOSHIAKI , KURAMOCHI NAOYOSHI , HITSUDA YUKIHISA , YASUDA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting diode capable of restraining the influence of damage by dry etching at a level difference section and improving element characteristics and reliability. SOLUTION: A p-side electrode 21 and an n-side electrode 22 are provided at a first region 10A and a second region 10B, respectively. A boundary region 10C between both of them is set to a two-stage structure of a first level difference section 31 in a p-type cladding layer 13 and a second level difference section 33 straddling over a pn junction section 14 with a flat section 32 in between. The thickness of the p-type cladding layer 13 in the flat section 32 becomes small, thus preventing current from spreading laterally. Current C injected from the p-side electrode 21 enters the n-type cladding layer 12 after lowering to the flat section 32 along the first level difference section 31, and flows toward the n-side electrode 22 laterally; and the path of the current C is separated from the second level difference section 33. Even if a pn structure on the surface of the second level difference section 33 is damaged by dry etching, the generation of a leak path, or the like is restrained. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 解决的问题：提供一种半导体发光二极管，其能够通过干蚀刻来抑制电平差异部分的损伤的影响，并提高元件特性和可靠性。 解决方案：p侧电极21和n侧电极22分别设置在第一区域10A和第二区域10B。 它们之间的边界区域10C被设定为p型包覆层13中的第一电平差分部分31和跨平面部分32的pn接合部分14上的第二电平差值部分33的两级结构 之间。 平坦部32中的p型包覆层13的厚度变小，防止电流横向扩散。 从p侧电极21注入的电流C在沿着第一电平差分部分31下降到平坦部分32之后进入n型包层12，并横向向n侧电极22流动。 并且电流C的路径与第二电平差值部分33分离。即使第二电平差值部分33的表面上的pn结构被干蚀刻损坏，也可以抑制泄漏路径的产生等 。 版权所有（C）2007，JPO＆INPIT
-
-
-
-
-
-
-
-
-
Search Results
15
records
(took 0.028 seconds)
