公开(公告)号：US20240120431A1

公开(公告)日：2024-04-11

申请号：US18276887

申请日：2021-12-30

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Sheng CHEN ,  Wenliang WANG ,  Jixing CHAI

IPC: H01L31/18 ,  C30B25/04 ,  C30B25/18 ,  C30B29/46 ,  H01L31/032

CPC classification number: H01L31/18 ,  C30B25/04 ,  C30B25/186 ,  C30B29/46 ,  H01L31/0324

Abstract: Clean version of the Abstract A preparation method for growing a germanium sulfide (GeS2) single-crystal thin film on a SiO2 substrate includes: cleaning a surface of a substrate with acetone, ethanol and deionized water, where the substrate is a Si/SiO2 substrate or a SiO2 glass substrate; photoetching the substrate, spin-coating a photoresist, and performing photoetching and dry etching or wet etching to obtain a groove pattern; depositing a germanium (Ge)-crystal layer in the groove pattern of the substrate to obtain a treated substrate; and putting the treated substrate into a chemical vapor deposition (CVD) device for growth, a growth source being high-purity sulfur (S) powder and high-purity Ge powder, thereby obtaining a GeS2 single-crystal thin film on the SiO2 substrate. The preparation method can grow GeS2 single crystals on the SiO2 substrate. The GeS2 single crystals have a high crystalline quality and a small surface roughness.

公开(公告)号：US20220328706A1

公开(公告)日：2022-10-13

申请号：US17732524

申请日：2022-04-29

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Wenliang WANG ,  Guoqiang LI ,  Baiyu SU ,  Zhengliang LIN ,  Deqi KONG ,  Wenjin MAI

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/0392

Abstract: An InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure and a preparation method and an application thereof are provided. The detector includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove structure, a mesa and a groove of the multiple quantum well layer are provided with a Si3N4 passivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.

公开(公告)号：US20250022973A1

公开(公告)日：2025-01-16

申请号：US18276667

申请日：2022-09-27

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Wenliang WANG ,  Jianhua DUAN ,  Guoqiang LI

IPC: H01L31/0304 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/18

Abstract: An epitaxial structure of a nonpolar AlGaN-based deep-ultraviolet (DUV) photoelectric detector and a preparation method thereof are provided. The epitaxial structure of the nonpolar AlGaN-based DUV photoelectric detector includes a nonpolar AlN buffer layer, a nonpolar Al0.15Ga0.85N buffer layer, and a nonpolar Al0.7Ga0.3N epitaxial layer that are sequentially grown on a LaAlO3 substrate. The LaAlO3 substrate takes a (100) plane as an epitaxial plane, and AlN[11-20] as an epitaxial growth direction. With the LaAlO3 substrate, the epitaxial structure reduces dislocations and stresses between the substrate and the epitaxial buffer layer. By designing two AlGaN epitaxial buffer layers with different components, the epitaxial structure reduces a dislocation density and a surface roughness of the nonpolar AlGaN epitaxial layer, further accelerates photoresponse and detectivity of the detector, and enhances overall performance of the nonpolar AlGaN-based DUV photoelectric detector.

公开(公告)号：US20240372020A1

公开(公告)日：2024-11-07

申请号：US18030513

申请日：2022-01-25

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Jixing CHAI ,  Wenliang WANG ,  Liang CHEN

IPC: H01L31/0304 ,  H01L31/101 ,  H01L31/11 ,  H01L31/18

Abstract: A photoelectric detector chip and a preparation method and application thereof are provided. The photoelectric detector chip includes a bottom electrode, a first GaN layer, an i-InyGa1-yN functional layer, a second GaN layer, an i-InxGa1-xN functional layer, a third GaN layer, and a top electrode that are stacked sequentially, where 0≤x≤1, and y>x; the first GaN layer, the second GaN layer, and the third GaN layer are an n-GaN layer, a p-GaN layer, and an n-GaN layer respectively. The photoelectric detector chip is a vertical-structure dual-band chip. Compared with a transverse structure, the vertical structure can reduce carrier transition time, increase the response speed of the detector, and effectively improve the −3 dB bandwidth of the detector. The dual bands allow the photoelectric detector chip to load voltages in different directions, thus achieving photoelectric detection in different bands.

公开(公告)号：US20240313143A1

公开(公告)日：2024-09-19

申请号：US18276662

申请日：2021-12-30

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Deqi KONG ,  Wenliang WANG ,  Liang CHEN

IPC: H01L31/101 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/18

CPC classification number: H01L31/1013 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/109 ,  H01L31/18

Abstract: A molybdenum diselenide (MoSe2)/InGaN multispectral photoelectric detector includes a substrate, a buffer layer, an InGaN layer and a MoSe2 layer that are arranged sequentially from bottom to top. The MoSe2 layer partially covers the InGaN layer. The photoelectric detector further includes a barrier layer and an electrode layer. The barrier layer is provided on the InGaN layer not covered by the MoSe2 layer and on a part of the MoSe2 layer. The electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe2 layer. A preparation method of the detector is further provided. The detector detects red light and blue light at the same time. While realizing a sensitivity enhanced micro-nano structure on a surface of a detector chip, the detector improves quantum efficiency in blue and red bands, and enhances resonant absorption for the blue light and red light.

公开(公告)号：US20230378280A1

公开(公告)日：2023-11-23

申请号：US18030516

申请日：2022-07-28

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Wenliang WANG ,  Shanjie LI ,  Guoqiang LI ,  Zhiheng XING ,  Nengtao WU

IPC: H01L29/40 ,  H01L23/31 ,  H01L23/29 ,  H01L29/423 ,  H01L21/56

CPC classification number: H01L29/401 ,  H01L23/3171 ,  H01L23/291 ,  H01L29/42376 ,  H01L21/56 ,  H01L29/66462

Abstract: A preparation method of a double-T-shaped gate based on double-layer passivation accurate etching includes: sequentially growing two passivation layers on an epitaxial structure, where the two passivation layers include a bottom passivation layer and a top passivation layer; performing a first exposure on the top passivation layer and etching the top passivation layer and the bottom passivation layer in a first exposure region from top to bottom to form a gate root region; performing a second exposure on the top passivation layer and etching the top passivation layer in a second exposure region to form a lower gate cap region; and performing a third exposure on the top passivation layer to form a top gate cap exposure region and performing metal evaporation and removing a photoresist to form a double-T-shaped gate structure in the two passivation layers.

公开(公告)号：US20230030977A1

公开(公告)日：2023-02-02

申请号：US17789789

申请日：2020-07-07

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Wenliang WANG ,  Guoqiang LI ,  Yuhui YANG ,  Deqi KONG ,  Zhiheng XING

IPC: H01L29/872 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/311 ,  H01L29/66 ,  H01L23/29 ,  H01L23/31 ,  H01L29/20 ,  H01L29/205

Abstract: The present invention provides a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate and a preparation method therefor and belongs to the field of rectifiers. The rectifier comprises a silicon substrate, a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer, a non-doped InGaN layer and a SiNx passivation layer that are stacked in sequence. The rectifier further comprises a mesa isolation groove and a Schottky contact electrode that are arranged at one side. The mesa isolation groove is in contact with the non-doped GaN layer, the non-doped InGaN layer, the SiNx passivation layer and the Schottky contact electrode. The Schottky contact electrode is in contact with the mesa isolation groove and the non-doped GaN layer. The thickness of the two-dimensional AlN layer is only several atomic layers, thus the received stress and polarization intensity are greater than those of the AlGaN layer.

公开(公告)号：US20210217879A1

公开(公告)日：2021-07-15

申请号：US16769157

申请日：2018-01-31

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Wenliang WANG ,  Guoqiang LI ,  Xiaochan LI ,  Yuan LI

IPC: H01L29/66 ,  H01L21/3065 ,  H01L29/20 ,  H01L29/812 ,  H01L21/02

Abstract: The present invention discloses a method for preparing a GaN rectifier suitable for operating at an alternating current frequency of 35 GHz: sequentially growing, on a silicon substrate, an N-polar GaN buffer layer, a carbon doped semi-insulated N-polar GaN layer, a non-doped N-polar AlGaN layer, a non-doped N-polar GaN layer and a non-doped N-polar InGaN thin film to obtain a rectifier epitaxial wafer; preparing a pattern groove for a schottky contact electrode on the GaN rectifier epitaxial wafer, and depositing the schottky contact electrode in the groove; preparing a pattern for an ohmic contact electrode, and depositing a device ohmic contact electrode on the surface of the epitaxial wafer; subsequently, depositing a silicon nitride passivation layer at a part where there is no electrode on the surface of the epitaxial wafer, and preparing a surface electrode area; and finally, performing mesa isolation treatment on the GaN rectifier epitaxial wafer. The present invention realizes the preparation of a high-frequency GaN rectifier, and improves the performance stability of a rectifier device operating at a high power.

公开(公告)号：US20200343346A1

公开(公告)日：2020-10-29

申请号：US16961124

申请日：2018-10-19

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Fangliang GAO ,  Zhenzhu XU

IPC: H01L29/20 ,  H01L29/06 ,  H01L21/02

Abstract: An InN nanorod epitaxial wafer grown on an aluminum foil substrate (1) sequentially comprises the aluminum foil substrate (1), an amorphous aluminum oxide layer (2), an AlN layer (3) and an InN nanorod layer, (4) from bottom to top. The wafer can be prepared by pretreating the aluminum foil substrate with an oxidized surface and carrying out an in-situ annealing treatment; then, in a molecular beam epitaxial growth process, forming AlN nucleation sites on the annealed aluminum foil substrate, nucleating on the AlN and growing InN nanorods on the AlN. where the substrate temperature is 400-700° C., the pressure of a reaction chamber is 4.0-10.0×10−5 Torr and the beam ratio of V/III is 20-40.