公开(公告)号：US20240178313A1

公开(公告)日：2024-05-30

申请号：US18281790

申请日：2022-09-23

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Nengtao WU ,  Zhiheng XING ,  Shanjie LI ,  Fanyi ZENG ,  Ling LUO

IPC: H01L29/778 ,  H01L21/225 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7787 ,  H01L21/2258 ,  H01L29/2003 ,  H01L29/66462

Abstract: An enhanced GaN high electron mobility transistor (HEMT) radio-frequency device and a manufacturing method thereof are provided. The enhanced GaN HEMT radio-frequency device includes a substrate, a first AlN interposed layer, a GaN buffer layer, a GaN trench layer, a second AlN interposed layer, an AlGaN barrier layer, a p-AlGaN layer, a metal drain electrode, a metal source electrode, and a metal gate electrode. Under an extremely high vacuum degree, metal Mg is doped and diffused to the AlGaN layer to form the p-AlGaN layer, and the metal Mg further forms a p-n junction with the undoped AlGaN layer, thereby depleting a two-dimensional electron gas (2DEG) under the gate. A HfO2 layer covers the metal Mg to prevent oxidation of the metal Mg.

公开(公告)号：US20230378280A1

公开(公告)日：2023-11-23

申请号：US18030516

申请日：2022-07-28

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Wenliang WANG ,  Shanjie LI ,  Guoqiang LI ,  Zhiheng XING ,  Nengtao WU

IPC: H01L29/40 ,  H01L23/31 ,  H01L23/29 ,  H01L29/423 ,  H01L21/56

CPC classification number: H01L29/401 ,  H01L23/3171 ,  H01L23/291 ,  H01L29/42376 ,  H01L21/56 ,  H01L29/66462

Abstract: A preparation method of a double-T-shaped gate based on double-layer passivation accurate etching includes: sequentially growing two passivation layers on an epitaxial structure, where the two passivation layers include a bottom passivation layer and a top passivation layer; performing a first exposure on the top passivation layer and etching the top passivation layer and the bottom passivation layer in a first exposure region from top to bottom to form a gate root region; performing a second exposure on the top passivation layer and etching the top passivation layer in a second exposure region to form a lower gate cap region; and performing a third exposure on the top passivation layer to form a top gate cap exposure region and performing metal evaporation and removing a photoresist to form a double-T-shaped gate structure in the two passivation layers.

公开(公告)号：US20230030977A1

公开(公告)日：2023-02-02

申请号：US17789789

申请日：2020-07-07

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Wenliang WANG ,  Guoqiang LI ,  Yuhui YANG ,  Deqi KONG ,  Zhiheng XING

IPC: H01L29/872 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/311 ,  H01L29/66 ,  H01L23/29 ,  H01L23/31 ,  H01L29/20 ,  H01L29/205

Abstract: The present invention provides a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate and a preparation method therefor and belongs to the field of rectifiers. The rectifier comprises a silicon substrate, a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer, a non-doped InGaN layer and a SiNx passivation layer that are stacked in sequence. The rectifier further comprises a mesa isolation groove and a Schottky contact electrode that are arranged at one side. The mesa isolation groove is in contact with the non-doped GaN layer, the non-doped InGaN layer, the SiNx passivation layer and the Schottky contact electrode. The Schottky contact electrode is in contact with the mesa isolation groove and the non-doped GaN layer. The thickness of the two-dimensional AlN layer is only several atomic layers, thus the received stress and polarization intensity are greater than those of the AlGaN layer.