公开(公告)号：US20240088869A1

公开(公告)日：2024-03-14

申请号：US18274236

申请日：2021-10-31

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Tielin ZHANG ,  Hongbin LIU ,  Xinyan YI ,  Lishuai ZHAO ,  Peidong OUYANG

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02

CPC classification number: H03H9/173 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/178 ,  H03H2003/021 ,  H03H2009/02204

Abstract: A frequency-tunable film bulk acoustic resonator and a preparation method therefor are provided. The resonator includes a substrate, an air gap, a sandwiched structure formed by electrodes and piezoelectric layers, and an electrode lead-out layer, wherein the substrate is connected to the sandwiched structure formed by the electrodes and the piezoelectric layers, and a connection face of the substrate and the sandwiched structure formed by the electrodes and the piezoelectric layers is recessed towards inside of the substrate to form the air gap; and the electrode lead-out layer is connected to the sandwiched structure formed by the electrodes and the piezoelectric layers. The sandwiched structure formed by the electrodes and the piezoelectric layers includes a bottom electrode, piezoelectric layers, intermediate electrodes, and a top electrode, wherein the electrodes and the piezoelectric layers are alternately arranged to form the sandwiched structure.

公开(公告)号：US20220157609A1

公开(公告)日：2022-05-19

申请号：US17598891

申请日：2019-10-27

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Peiye SUN ,  Zhikun LIU ,  Lijun WAN ,  Dingbo CHEN ,  Xianfeng QUE ,  Shunan YAO ,  Runze LI

IPC: H01L21/3065 ,  H01J37/32

Abstract: The present invention discloses a precise etching apparatus for preparing a recessed-gate enhancement device and an etching method for the same. The apparatus provided by the present invention includes an inductively-coupled plasma etching chamber, a current detection device, an inductive coil, a radio frequency source, a mechanical pump, and a molecular pump. The current detection device is connected with the inductively-coupled plasma etching chamber. The inductive coil is connected with the inductively-coupled plasma etching chamber. The radio frequency source is connected with the inductive coil. The mechanical pump and the molecular pump are connected with the inductively-coupled plasma etching chamber. When a displayed current value is zero during an HEMT device preparation process, the apparatus shuts off a two-dimensional electron gas channel, and etching is terminated, thereby preventing gate leakage caused by over-etching or damage to the two-dimensional electron gas channel, thus achieving precise etching.

公开(公告)号：US20220102540A1

公开(公告)日：2022-03-31

申请号：US17439820

申请日：2019-05-15

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Dingbo CHEN ,  Zhikun LIU ,  Lijun WAN

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L21/02 ,  H01L29/40

Abstract: A GaN-HEMT device with a sandwich structure and a method for preparing the same are provided. The GaN-HEMT device includes an epitaxial layer and electrodes, wherein the epitaxial layer includes a GaN channel layer (2) and an AlyGa1-y barrier layer (1), and is arranged from top to bottom; the electrodes include a gate electrode (6), a source electrode (7), a drain electrode (5) and a field plate electrode (10), wherein the field plate electrode (10) and the gate electrode (6) are respectively fabricated on an upper surface and a lower surface of the epitaxial layer, and the field plate electrode (10) extends to a region beyond the epitaxial layer and is connected with the gate electrode (6) to form the sandwich structure, and the source electrode (7) and the drain electrode (5) are respectively located at two ends of the epitaxial layer.

公开(公告)号：US20180090316A1

公开(公告)日：2018-03-29

申请号：US15563599

申请日：2016-08-18

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Fangliang GAO ,  Lei WEN ,  Shuguang ZHANG ,  Jingling LI

IPC: H01L21/02 ,  C30B29/42 ,  C30B25/18 ,  C30B25/10 ,  H01L21/324

CPC classification number: H01L21/02505 ,  C30B25/10 ,  C30B25/183 ,  C30B29/42 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02661 ,  H01L21/02694 ,  H01L21/3245 ,  H01L31/1852 ,  Y02E10/544

Abstract: Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning; (2) Si (111) substrate preprocessing; (3) Si (111) substrate oxide film removal; (4) first InxGa1-xAs buffer layer growth; (5) first InxGa1-xAs buffer layer in situ annealing; (6) GaAs buffer layer growth; (7) GaAs buffer layer in situ annealing; (8) second InxGa1-xAs buffer layer growth; (9) second InxGa1-xAs buffer layer in situ annealing; (10) GaAs epitaxial thin film growth. Also disclosed is a GaAs thin film grown on an Si substrate. The GaAs thin film obtained by the present invention has a good crystal quality, an even surface, and a positive promotional significance with regard to the preparation of semiconductor devices, particularly in the field of solar cells.

公开(公告)号：US20250167765A1

公开(公告)日：2025-05-22

申请号：US19017865

申请日：2025-01-13

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Kaibin XU ,  Zhipeng CHEN ,  Han HU ,  Yuhan ZHU

IPC: H03H9/54 ,  H03H3/02 ,  H03H9/17

Abstract: A method for preparing a hybrid filter on a chip with IPD and FBAR, includes: preparing a leakage isolation layer on a supporting substrate by deposition; obtaining an inductor layer on the leakage isolation layer, leaving a window at a bottom of a groove surrounding a cross section of a TGV inductor stack on a mask, and patterning an inductor metal simultaneously; forming a first insulating layer on the inductor metal, and forming lead through holes by photolithography; repeating steps and alternately to obtain a three-layer stacked TGV inductor; depositing a second insulating layer on the TGV inductor; depositing two capacitor layers on the second insulating layer, and depositing a third insulating layer between the two capacitor layers to form an MIM capacitor; and preparing a BAW resonator on the MIM capacitor, and connecting the TGV inductor, the MIM capacitor and the BAW resonator through the lead through holes.

公开(公告)号：US20240332443A1

公开(公告)日：2024-10-03

申请号：US18271678

申请日：2022-01-25

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Jixing CHAI ,  Wenliang WANG ,  Hao LI

IPC: H01L31/101 ,  H01L31/0216 ,  H01L31/0304 ,  H01L31/18

CPC classification number: H01L31/1013 ,  H01L31/02161 ,  H01L31/03048 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1868

Abstract: A chip for visible-light communication (VLC), a preparation method, and an application of the chip includes a substrate, a buffer layer, an intrinsic GaN layer, a first GaN layer, an i-InxGa1-xN functional layer, a second GaN layer, an i-InyGa1-yN functional layer, a third GaN layer, and a top electrode that are stacked sequentially, where 0≤x

公开(公告)号：US20160218006A1

公开(公告)日：2016-07-28

申请号：US15026726

申请日：2014-12-05

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Fangliang GAO ,  Yunfang GUAN ,  Lei WEN ,  Jingling LI ,  Shuguang ZHANG

IPC: H01L21/02 ,  H01L29/201

CPC classification number: H01L21/02546 ,  C30B25/183 ,  C30B29/42 ,  H01L21/02052 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L29/201 ,  H01L31/03046 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/544

Abstract: The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature In0.4Ga0.6As buffer layer, a high temperature In0.4Ga0.6As buffer layer and an In0.53Ga0.47As expitaxial film, arranged sequentially, wherein the low temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 350˜380®C.; the high temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 500˜540° C., and the sum of the thickness of the low temperature In0.4Ga0.6As buffer layer and the thickness of the high temperature In0.4Ga0.6As buffer layer is 10˜20 nm. The invention further discloses a method for preparing the InGaAs film. The InGaAs film grown on the Si substrate of the present invention has good crystal quality, is almost completely relaxed, and has a simple preparation process.

Abstract translation: 本发明公开了一种在Si衬底上生长的InGaAs膜，它包括Si衬底，低温In0.4Ga0.6As缓冲层，高温In0.4Ga0.6As缓冲层和In0.53Ga0.47As外延膜， 其中低温In0.4Ga0.6As缓冲层是在350〜380℃的温度下生长的In 0.4 Ga 0.6 As缓冲层; 高温In0.4Ga0.6As缓冲层是在500〜540℃的温度下生长的In 0.4 Ga 0.6 As缓冲层，低温In0.4Ga0.6As缓冲层的厚度和 高温In0.4Ga0.6As缓冲层的厚度为10〜20nm。 本发明还公开了一种制备InGaAs薄膜的方法。 在本发明的Si衬底上生长的InGaAs膜具有良好的晶体质量，几乎完全松弛，并且具有简单的制备工艺。

公开(公告)号：US20250096764A1

公开(公告)日：2025-03-20

申请号：US18580179

申请日：2023-10-31

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Han HU ,  Chenyang LI ,  Tianyou LUO ,  Peidong OUYANG

IPC: H03H3/02 ,  G06F30/22 ,  G06F111/04

Abstract: A Kriging model-based optimal design method and device for a bulk acoustic resonator, and a storage medium are provided. The Kriging model-based optimal design method includes: determining a structure and a material of a resonator, establishing a corresponding MASON model, and performing one-dimensional simulation on the MASON model to obtain a simulation result; determining, based on the simulation result, a design variable for optimizing the resonator, and constructing a Kriging surrogate model; determining an optimization goal, constructing an optimization problem model based on the optimization goal and the Kriging surrogate model, and solving the optimization problem model to obtain an optimal solution; and reducing upper and lower limits of the design variable to improve optimization accuracy. The Kriging model-based optimal design method can predict a performance indicator of an unknown region based on a data characteristic of an existing variable, thereby saving a time cost of actually preparing a device.

公开(公告)号：US20240355952A1

公开(公告)日：2024-10-24

申请号：US18245943

申请日：2022-01-25

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Wenliang WANG ,  Linhao LI ,  Guoqiang LI ,  Hongsheng JIANG

IPC: H01L31/108 ,  H01L31/0304 ,  H01L31/18

CPC classification number: H01L31/108 ,  H01L31/03048 ,  H01L31/1848

Abstract: The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded AlyGa1-yN layer, and an undoped N-polar plane AlxGa1-xN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiNz passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector′ in the UV solar-blind band.

公开(公告)号：US20240178313A1

公开(公告)日：2024-05-30

申请号：US18281790

申请日：2022-09-23

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Nengtao WU ,  Zhiheng XING ,  Shanjie LI ,  Fanyi ZENG ,  Ling LUO

IPC: H01L29/778 ,  H01L21/225 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7787 ,  H01L21/2258 ,  H01L29/2003 ,  H01L29/66462

Abstract: An enhanced GaN high electron mobility transistor (HEMT) radio-frequency device and a manufacturing method thereof are provided. The enhanced GaN HEMT radio-frequency device includes a substrate, a first AlN interposed layer, a GaN buffer layer, a GaN trench layer, a second AlN interposed layer, an AlGaN barrier layer, a p-AlGaN layer, a metal drain electrode, a metal source electrode, and a metal gate electrode. Under an extremely high vacuum degree, metal Mg is doped and diffused to the AlGaN layer to form the p-AlGaN layer, and the metal Mg further forms a p-n junction with the undoped AlGaN layer, thereby depleting a two-dimensional electron gas (2DEG) under the gate. A HfO2 layer covers the metal Mg to prevent oxidation of the metal Mg.