公开(公告)号：AU2012296657A1

公开(公告)日：2014-02-27

申请号：AU2012296657

申请日：2012-08-14

Applicant: SPECTRASENSORS INC

Inventor： SCHREMPEL MATHIAS ,  FEITISCH ALFRED ,  NEUBAUER GABI

IPC: H01S5/022 ,  H01L23/485 ,  H01S5/042

Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride

公开(公告)号：AU2011318585A1

公开(公告)日：2013-05-09

申请号：AU2011318585

申请日：2011-02-15

Applicant: SPECTRASENSORS INC

Inventor： FEITISCH ALFRED ,  KELLER LUTZ ,  LIU XIANG ,  SCHREMPEL MATHIAS ,  HELBLEY KEITH BENJAMIN

IPC: G01N21/35 ,  G01N21/61

Abstract: A valid state of an analytical system that includes a light source (102) and a detector (106) can be verified by determining that deviation of first light intensity data quantifying a first intensity of light received at the detector from the light source after the light has passed at least once through each of a reference gas in a validation cell (114) and a zero gas from a stored data set does not exceed a pre-defined threshold deviation. The stored data set can represent at least one previous measurement collected during a previous instrument validation process performed on the analytical system. The reference gas can include a known amount of an analyte. A concentration of the analyte in a sample gas in a measurement cell (112) can be determined by correcting second light intensity data quantifying a second intensity of the light received at the detector after the light passes at least once through each of the reference gas in the validation cell and a sample gas containing an unknown concentration of the analyte compound. Related systems, methods, and articles of manufacture are also described.

公开(公告)号：CA2815323A1

公开(公告)日：2012-04-26

申请号：CA2815323

申请日：2011-02-15

Applicant: SPECTRASENSORS INC

Inventor： FEITISCH ALFRED ,  KELLER LUTZ ,  LIU XIANG ,  SCHREMPEL MATHIAS ,  HELBLEY KEITH BENJAMIN

IPC: G01N21/35 ,  G01N21/61

Abstract: A valid state of an analytical system that includes a light source (102) and a detector (106) can be verified by determining that deviation of first light intensity data quantifying a first intensity of light received at the detector from the light source after the light has passed at least once through each of a reference gas in a validation cell (114) and a zero gas from a stored data set does not exceed a pre-defined threshold deviation. The stored data set can represent at least one previous measurement collected during a previous instrument validation process performed on the analytical system. The reference gas can include a known amount of an analyte. A concentration of the analyte in a sample gas in a measurement cell (112) can be determined by correcting second light intensity data quantifying a second intensity of the light received at the detector after the light passes at least once through each of the reference gas in the validation cell and a sample gas containing an unknown concentration of the analyte compound. Related systems, methods, and articles of manufacture are also described.

公开(公告)号：AU2015202533B2

公开(公告)日：2016-09-01

申请号：AU2015202533

申请日：2015-05-11

Applicant: SPECTRASENSORS INC

Inventor： NEUBAUER GABI ,  FEITISCH ALFRED ,  SCHREMPEL MATHIAS

IPC: H01S5/042 ,  H01S5/022

Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

公开(公告)号：CA2844789A1

公开(公告)日：2013-02-21

申请号：CA2844789

申请日：2012-08-14

Applicant: SPECTRASENSORS INC

Inventor： SCHREMPEL MATHIAS ,  FEITISCH ALFRED ,  NEUBAUER GABI

IPC: H01S5/022 ,  H01L23/485 ,  H01S5/042

Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride

公开(公告)号：CA2966470A1

公开(公告)日：2012-04-26

申请号：CA2966470

申请日：2011-02-15

Applicant: SPECTRASENSORS INC

Inventor： FEITISCH ALFRED ,  KELLER LUTZ ,  LIU XIANG ,  SCHREMPEL MATHIAS ,  HELBLEY KEITH BENJAMIN

IPC: G01J3/42 ,  G01J3/02

公开(公告)号：WO2017024046A3

公开(公告)日：2017-03-30

申请号：PCT/US2016045375

申请日：2016-08-03

Applicant: SPECTRASENSORS INC

Inventor： FEITISCH ALFRED ,  LIU XIANG ,  LUDLUM KEVIN ,  SCHREMPEL MATHIAS

IPC: G01J3/10 ,  G01J3/02 ,  G01J3/28 ,  G01J3/42 ,  G01J3/433 ,  G01N21/27 ,  G01N21/3504

CPC classification number: G01J3/0286 ,  G01J3/10 ,  G01J3/28 ,  G01J3/42 ,  G01J3/433 ,  G01J2003/4332 ,  G01J2003/4334 ,  G01N21/274

Abstract: Frequency registration deviations occurring during a scan of a frequency or wavelength range by a spectroscopic analysis system can be corrected using passive and/or active approaches. A passive approach can include determining and applying mathematical conversions to a recorded field spectrum. An active approach can include modifying one or more operating parameters of the spectroscopic analysis system to reduce frequency registration deviation.

Abstract translation: 通过光谱分析系统在频率或波长范围的扫描期间发生的频率对准偏差可以使用无源和/或主动方法进行校正。 被动方法可以包括确定并应用数学转换到记录的场谱。 主动方法可以包括修改光谱分析系统的一个或多个操作参数以减少频率对准偏差。

公开(公告)号：CA2887911C

公开(公告)日：2017-06-27

申请号：CA2887911

申请日：2013-10-23

Applicant: SPECTRASENSORS INC

Inventor： FEITISCH ALFRED ,  NEUBAUER GABI ,  SCHREMPEL MATHIAS

IPC: H01S5/022 ,  B23K20/02 ,  H01S5/024 ,  H01S5/042

Abstract: A first contact surface (310) of a semiconductor laser chip (302) can be formed to a first target surface roughness and a second contact surface (312) of a carrier mounting (304) can be formed to a second target surface roughness. A first bond preparation layer (306) comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer (308) comprising a second metal can optionally be applied to the formed second contact surface. Both preparation layers may be made of gold and diffusion bonding results from a heating of device under pressure. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

公开(公告)号：AU2013334609B2

公开(公告)日：2016-12-01

申请号：AU2013334609

申请日：2013-10-23

Applicant: SPECTRASENSORS INC

Inventor： FEITISCH ALFRED ,  NEUBAUER GABI ,  SCHREMPEL MATHIAS

IPC: H01S5/022 ,  B23K20/02 ,  H01S5/024 ,  H01S5/042

Abstract: A first contact surface (310) of a semiconductor laser chip (302) can be formed to a first target surface roughness and a second contact surface (312) of a carrier mounting (304) can be formed to a second target surface roughness. A first bond preparation layer (306) comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer (308) comprising a second metal can optionally be applied to the formed second contact surface. Both preparation layers may be made of gold and diffusion bonding results from a heating of device under pressure. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

公开(公告)号：AU2013359242B2

公开(公告)日：2016-09-22

申请号：AU2013359242

申请日：2013-12-12

Applicant: SPECTRASENSORS INC

Inventor： KELLER LUTZ ,  FEITISCH ALFRED ,  SCOTT PETER ,  SCHREMPEL MATHIAS ,  ST JOHN NATHAN

IPC: G01N21/03 ,  G01N21/09

Abstract: A spectrometer cell can include a spacer, at least one end cap, and at least one mirror with a reflective surface. The end cap can be positioned proximate to a first contact end of the spacer such that the end cap and spacer at least partially enclose an internal volume of the spectrometer cell. The mirror can be secured in place by a mechanical attachment that may include attachment materials that are chemically inert to at least one reactive gas compound, be thermally stable above at least 120 °C, and be capable of holding an optical axis of the reflective surface in a fixed orientation relative to other components of the spectrometer cell and or a spectrometer device that comprises the spectrometer cell. The mirror can optionally be constructed of a material such as stainless steel, copper, aluminum, alumino-silicate, ceramic, or the like. Related methods, articles of manufacture, systems, etc. are described.