公开(公告)号：FR2846147A1

公开(公告)日：2004-04-23

申请号：FR0212851

申请日：2002-10-16

Applicant: ST MICROELECTRONICS SA

Inventor： CAZAUX YVON ,  ROY FRANCOIS

IPC: H01L27/146 ,  H04N5/363 ,  H04N5/374 ,  H04N3/15

Abstract: The device is designed for controlling a photosensitive cell comprising a photodiode which can be discharged into the read mode (S) by the intermediary of a MOS transfer transistor. The device provides a signal (T) for controlling the gate of the transfer transistor so that at the low signal level the transfer transistor is nonconducting and at the high signal level the transfer transistor is conducting. The device also provides a signal for controlling the transition between two levels of a determined average slope. The device which is the last stage of a control circuit providing the charge-transfer control signal (T) in response to a control signal (C) comprises two complementary MOS transistors connected in series with one constant current source (I) in the first embodiment, or two constant current sources (I,I') in the second embodiment. The gates of the two transistors are connected together and receive the binary control signal (C). The control signal (T) has a finite slope between two levels, and a plateau intermediate between two levels. The duration (Td) of the transition can be adjusted by the intensity of the current provided by the constant current source and is greater than 50 ns; the maximum value is about 0.5 microsecond. The control signal (T) is output simultaneously to the gates of the transfer transistors of several photosensitive cells. The method (claimed) for controlling a photosensitive cell comprising a photodiode is implemented by the device (claimed).

公开(公告)号：FR2824665A1

公开(公告)日：2002-11-15

申请号：FR0106132

申请日：2001-05-09

Applicant: ST MICROELECTRONICS SA

Inventor： CAZAUX YVON

IPC: H01L27/146 ,  H01L31/00 ,  H01L31/0352

Abstract: A photodetector formed in an active area of a semiconductor substrate of a first conductivity type, including a MOS transistor and a photodiode formed of the junction between the substrate and a region of a second conductivity type also forming the source of the MOS transistor, a heavily-doped layer of the first conductivity type covering the source region and a portion of the substrate, said portion of the substrate being delimited by an opening of the source region extending in a centered manner from the side of the source region opposite to the channel region of the transistor, towards this channel region.

公开(公告)号：FR2888989A1

公开(公告)日：2007-01-26

申请号：FR0552260

申请日：2005-07-21

Applicant: ST MICROELECTRONICS SA

Inventor： CAZAUX YVON ,  HERAULT DIDIER

IPC: H01L27/146 ,  H04N5/30

Abstract: L'invention concerne un capteur d'images comprenant un ensemble de pixels, chaque pixel comprenant une photodiode (103) et un transistor d'accès (104) relié à un circuit de lecture (T1, T2, T3), la photodiode et le transistor d'accès étant formés dans et au-dessus d'un premier substrat semiconducteur (100), tout ou partie du circuit de lecture étant formé dans un second substrat semiconducteur (101), le second substrat étant placé au-dessus du premier substrat et séparé de ce dernier par une couche isolante intermédiaire (102) recouvrant le transistor d'accès, la photodiode recevant des photons incidents arrivant dans le premier substrat semiconducteur du côté de sa face inférieure opposée à ladite couche isolante intermédiaire.