公开(公告)号：FR2910710A1

公开(公告)日：2008-06-27

申请号：FR0655830

申请日：2006-12-21

Applicant: ST MICROELECTRONICS SA

Inventor： BARBIER FREDERIC ,  CAZAUX YVON

IPC: H01L27/146 ,  H04N5/359 ,  H04N5/3745

Abstract: L'invention concerne un dispositif de commande d'un capteur d'images comprenant au moins une cellule photosensible (PIX) comprenant une photodiode (D) adaptée à se décharger dans un noeud de lecture (SN) par l'intermédiaire d'un premier transistor MOS (M4), le noeud de lecture étant relié à la grille d'un deuxième transistor MOS (M2) dont la source est reliée à un système de traitement. Le dispositif comprend un circuit de polarisation (Vclamp, SW) adapté à augmenter le potentiel de ladite source pendant la décharge de la photodiode vers le noeud de lecture.

公开(公告)号：FR2853794A1

公开(公告)日：2004-10-15

申请号：FR0304564

申请日：2003-04-11

Applicant: ST MICROELECTRONICS SA

Inventor： CAZAUX YVON ,  HERAULT DIDIER

IPC: H04N5/359 ,  H04N5/374 ,  H04N5/335

Abstract: The process involves isolating a photodiode from a reference potential at end of a wait state, by setting a transfer transistor when initialization transistor is blocked, and setting the initialization transistor when transfer transistor is blocked. Voltage of the photodiode is varied from an initialization voltage to a useful voltage during an integration phase. A voltage reading phase represents the useful voltage. An independent claim is also included for a device of controlling a photosensitive cell.

公开(公告)号：FR2824665B1

公开(公告)日：2004-07-23

申请号：FR0106132

申请日：2001-05-09

Applicant: ST MICROELECTRONICS SA

Inventor： CAZAUX YVON

IPC: H01L27/146 ,  H01L31/00 ,  H01L31/0352

Abstract: A photodetector formed in an active area of a semiconductor substrate of a first conductivity type, including a MOS transistor and a photodiode formed of the junction between the substrate and a region of a second conductivity type also forming the source of the MOS transistor, a heavily-doped layer of the first conductivity type covering the source region and a portion of the substrate, said portion of the substrate being delimited by an opening of the source region extending in a centered manner from the side of the source region opposite to the channel region of the transistor, towards this channel region.

公开(公告)号：FR2904143A1

公开(公告)日：2008-01-25

申请号：FR0653082

申请日：2006-07-24

Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE ,  ST MICROELECTRONICS CROLLES 2

Inventor： CAZAUX YVON ,  CORONEL PHILIPPE ,  FENOUILLET BERANGER CLAIRE ,  ROY FRANCOIS

IPC: H01L27/146 ,  H04N3/15

Abstract: L'invention concerne un capteur d'images comprenant des cellules photosensibles comportant des photodiodes (D) et au moins un circuit supplémentaire à forte dissipation thermique comportant des transistors (M7, M8). Le capteur d'images est réalisé de façon monolithique et comprend une couche (60) d'un matériau semiconducteur ayant des première et deuxième faces opposées (15, 16) et comprenant, du côté de la première face (15), des premières régions (34, 38) correspondant aux bornes de puissance des transistors, l'éclairage du capteur d'images étant destiné à être réalisé du côté de la deuxième face ; un empilement de couches isolantes (70) recouvrant la première face ; un renfort (78) thermiquement conducteur recouvrant l'empilement du côté opposé à la couche ; et des vias (76) thermiquement conducteurs reliant la couche au renfort.

公开(公告)号：FR3000606B1

公开(公告)日：2015-01-30

申请号：FR1350008

申请日：2013-01-02

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS ,  CAZAUX YVON

IPC: H01L27/146

公开(公告)号：FR3000606A1

公开(公告)日：2014-07-04

申请号：FR1350008

申请日：2013-01-02

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS ,  CAZAUX YVON

IPC: H01L27/146

Abstract: L'invention concerne un capteur d'image formé dans et sur un substrat semiconducteur (201), ayant une pluralité de pixels (200) comportant chacun : une zone photosensible (205), une zone de lecture, et une zone de stockage (207) s'étendant entre la zone photosensible (205) et la zone de lecture ; au moins une première électrode verticale isolée (203) s'étendant dans le substrat entre la zone photosensible (205) et la zone de stockage (207) ; et au moins une deuxième électrode verticale isolée (209) s'étendant dans le substrat entre la zone de stockage (207) et la zone de lecture (211).

公开(公告)号：FR2846147B1

公开(公告)日：2005-09-16

申请号：FR0212851

申请日：2002-10-16

Applicant: ST MICROELECTRONICS SA

Inventor： CAZAUX YVON ,  ROY FRANCOIS

IPC: H01L27/146 ,  H04N5/363 ,  H04N5/374 ,  H04N3/15

公开(公告)号：FR2824664A1

公开(公告)日：2002-11-15

申请号：FR0106131

申请日：2001-05-09

Applicant: ST MICROELECTRONICS SA

Inventor： CAZAUX YVON

IPC: H01L27/144 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/0376 ,  H04N5/361

Abstract: The photodetector comprises a photodiode (D) having amorphous silicon structure whose anode is connected to a reference potential (VSS) and cathode to a detection node (SN), an initialization MOS transistor (T1) connected between the node and a switch (30) for bringing the cathode of the photodiode to the first supply potential (VDD) during an initialization phase, andn two MOS transistors (T2,T3) for measuring the potential of the cathode of the photodiode. The initialization transistor (T1) and the switch (30) bring the cathode of the photodiode to a saturation potential (Vraz), which is close to the reference potential, immediately before the initialization phase. The switch (30) brings the drain of the transistor (T1) to the saturation potential (Vraz) or to the first supply potential (VDD). The initialization transistor (T1) is controlled in the mode of weak inversion, or in the mode of strong inversion. The measuring transistor (T2) has the gate connected to the cathode of the photodiode at the mode (SN). The measuring transistor (T3) is connected in series with the transistor (T2), and the series is connected between the first supply potential (VDD) and a read circuit (2). The two supply potentials are equal. A method for measuring light received by the photodiode includes the following steps: bringing, the cathode of the photodiode to the situation potential which is close to the reference potential; bringing the cathode of the photodiode to the supply potential, then isolating the cathode; effecting the first measurement of the potential of the cathode immediately after isolating the cathode; subjecting the photodiode to a luminous radiation during a determined period; and effecting the second measurement of the potential of the cathode and subtracting the second measurement from the first measurement.

公开(公告)号：FR2910710B1

公开(公告)日：2009-03-13

申请号：FR0655830

申请日：2006-12-21

Applicant: ST MICROELECTRONICS SA

Inventor： BARBIER FREDERIC ,  CAZAUX YVON

IPC: H01L27/146 ,  H04N5/359 ,  H04N5/3745

公开(公告)号：FR2888989B1

公开(公告)日：2008-06-06

申请号：FR0552260

申请日：2005-07-21

Applicant: ST MICROELECTRONICS SA

Inventor： CAZAUX YVON ,  HERAULT DIDIER

IPC: H01L27/146 ,  H04N5/30

Abstract: An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit being formed in a second semiconductor substrate, the second substrate being placed above the first substrate and separated therefrom by an intermediary insulating layer covering the access transistor, the photodiode receiving incident photons on its lower surface side opposite to the intermediary insulating layer.