公开(公告)号：ITUA20164739A1

公开(公告)日：2017-12-29

申请号：ITUA20164739

申请日：2016-06-29

Applicant: ST MICROELECTRONICS SRL ,  ST MICROELECTRONICS CROLLES 2 SAS ,  ST MICROELECTRONICS ROUSSET

Inventor： CONTE ANTONINO ,  CASTALDO ENRICO ,  BIANCHI RAUL ANDRES ,  LA ROSA FRANCESCO

IPC: G04F10/10

公开(公告)号：DE602005010403D1

公开(公告)日：2008-11-27

申请号：DE602005010403

申请日：2005-05-25

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTE ANTONINO ,  SBERNO GIAMPIERO ,  MICCICHE MARIO ,  CASTALDO ENRICO

IPC: G11C16/16

Abstract: A non-volatile memory device is proposed. The memory device (100) includes a plurality of blocks (115) of memory cells (125), each block having a common biasing node (SL) for all the memory cells of the block, biasing means (150) for providing a biasing voltage, and selection means (140, 145) for selectively applying the biasing voltage to the biasing node of a selected block, for each block the selection means including first switching means (N8, N9, N10) and second switching means (N7) connected in series, the first switching means being connected with the biasing node and the second switching means being connected with the biasing means, wherein the second switching means of all the blocks are connected in parallel, the selection means including means (145) for closing the first switching means of the selected block and the second switching means of all the blocks, and for opening the second switching means of each unselected block.