公开(公告)号：ITVA980012A1

公开(公告)日：1999-12-06

申请号：ITVA980012

申请日：1998-06-05

Applicant: ST MICROELECTRONICS SRL

Inventor： LOSAVIO ALDO

IPC: H01L21/762

Abstract: A method for recovering the original properties of a silicon oxide film that has suffered a high energy implantation of dopants in the underlying silicon substrate, includes a brief heat treatment without causing an excessive lateral diffusion in the silicon substrate of the implanted dopants. Heat treating in an oven at a temperature of 800° C. for few minutes per wafer, which was subjected to high energy implantation, makes it possible to recover etch rate characteristics that are practically similar to those of the original non-implanted silicon oxide.

公开(公告)号：DE69417211T2

公开(公告)日：1999-07-08

申请号：DE69417211

申请日：1994-04-12

Applicant: ST MICROELECTRONICS SRL

Inventor： LOSAVIO ALDO ,  BACCHETTA MAURIZIO

IPC: H01L21/8247 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L29/788 ,  H01L29/792

Abstract: A planarization process for the manufacturing of integrated circuits, particularly for non-volatile semiconductor memory devices, comprises the steps of: forming a first layer (12) of undoped oxide acting as a barrier layer over a semiconductor substrate (3) wherein integrated devices (M,MC1,MC2) have been previously obtained; forming a second layer (13) of oxide containing phosphor over the first undoped oxide; forming a third layer (14) of oxide containing phosphor and boron over the second oxide layer, the concentration of phosphor being lower than or equal to the concentration of boron; performing a thermal process at a temperature sufficient to melt the third oxide layer (14), to obtain a planar surface.