公开(公告)号：EP3930010A1

公开(公告)日：2021-12-29

申请号：EP21180942.1

申请日：2021-06-22

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BELLOCCHI, Gabriele ,  BADALA', Paolo ,  CRUPI, Isodiana

IPC: H01L31/0224 ,  H01L31/105 ,  H01L31/18

Abstract: A device (50) for detecting UV radiation, comprising: a SiC substrate (53) having an N doping; a SiC drift layer (52) having an N doping, which extends over the substrate (53); a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region (59) having a P doping, which extends in the drift layer (52); and an ohmic-contact region (60) including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region (59). The ohmic-contact region (60) is transparent to the UV radiation to be detected.