公开(公告)号：EP3896719A1

公开(公告)日：2021-10-20

申请号：EP21167866.9

申请日：2021-04-12

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BADALA', Paolo ,  BASSI, Anna ,  BELLOCCHI, Gabriele

IPC: H01L21/28 ,  H01L29/45 ,  H01L21/268 ,  H01L21/265 ,  H01L21/329 ,  H01L29/872 ,  H01L29/16

Abstract: A method for manufacturing a SiC-based electronic device (50), comprising the steps of: implanting, at a front side (52a) of a solid body (52) of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region (59') that extends in depth in the solid body starting from the front side (52a) and has a top surface co-planar with said front side (52a); and generating a laser beam (82) directed towards the implanted region (59') in order to generate heating of the implanted region (59') at temperatures comprised between 1500°C and 2600°C so as to form an ohmic contact region (59") including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region (59') and, simultaneously, activation of the dopant species of P type.

公开(公告)号：EP4333027A1

公开(公告)日：2024-03-06

申请号：EP23190768.4

申请日：2023-08-10

Applicant: STMicroelectronics S.r.l.

Inventor： SAGGIO, Mario Giuseppe ,  CAMALLERI, Cateno Marco ,  BELLOCCHI, Gabriele ,  RASCUNA', Simone

IPC: H01L21/336 ,  H01L29/45 ,  H01L29/78 ,  H01L29/12

Abstract: Method of manufacturing an electronic device (20), comprising forming an ohmic contact (59; 61) at an implanted region (26; 55) of a semiconductor body (48). Forming the ohmic contact provides for performing a high-temperature thermal process for allowing a reaction between a metal material and the material of the semiconductor body, for forming a silicide of the metal material. The step of forming the ohmic contact is performed prior to a step of forming one or more electrical structures (52, 56) which include materials that may be damaged by the high temperature of the thermal process of forming the silicide.

公开(公告)号：EP4187621A1

公开(公告)日：2023-05-31

申请号：EP22206027.9

申请日：2022-11-08

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  PUGLISI, Valeria ,  BELLOCCHI, Gabriele

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/16 ,  H01L21/329 ,  H01L29/40 ,  H01L23/31

Abstract: An electronic device (50; 100) comprising: a semiconductor body (53) of silicon carbide; a first insulating layer (61) on a first surface (53a) of the semiconductor body (53), of a first material with electrical-insulator or dielectric characteristics; a first layer of metal material (58) extending in part on the first surface (53a) of the semiconductor body (53) and in part on the first insulating layer (61); an interface layer (63) on the first layer of metal material (58) and on the first insulating layer (61), of a second material different from the first material; and a passivation layer (69) of said first material on the interface layer (63). The first material is silicon oxide, and the second material is silicon nitride.

公开(公告)号：EP3945607A1

公开(公告)日：2022-02-02

申请号：EP21187915.0

申请日：2021-07-27

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  CHIBBARO, Claudio

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/36 ,  H01L29/16 ,  H01L21/329

Abstract: An electronic device (50), comprising: a solid body (52, 53) of SiC having a surface (52a) and presenting a first conductivity type (N); a first implanted region (59') and a second implanted region (59') of a P type, which extend into the solid body (52, 53) in a direction (Z) starting from the surface (52a) and delimit between them a surface portion (64) of said solid body; a Schottky contact on the surface and in direct contact with the surface portion (64); and ohmic contacts on the surface and in direct contact with the first and second implanted regions (59'). The solid body (52, 53) comprises an epitaxial layer (52) including the surface portion (64) and a bulk portion, wherein the surface portion (64) houses a plurality of doped sub-regions (64a-64c) which extend in succession one after another in the direction (Z), are of an N type, and have a respective conductivity level higher than that of the bulk portion.

公开(公告)号：EP4322229A3

公开(公告)日：2024-05-22

申请号：EP23220528.6

申请日：2021-06-22

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BELLOCCHI, Gabriele ,  BADALA', Paolo ,  CRUPI, Isodiana

IPC: H01L31/0224 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L21/0485 ,  H01L31/1864 ,  H01L31/105 ,  H01L31/022408 ,  Y02P70/50

Abstract: A device (50) for detecting UV radiation, comprising: a SiC substrate (53) having an N doping; a SiC drift layer (52) having an N doping, which extends over the substrate (53); a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region (59) having a P doping, which extends in the drift layer (52); and an ohmic-contact region (60) including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region (59). The ohmic-contact region (60) is transparent to the UV radiation to be detected.

公开(公告)号：EP4191663A1

公开(公告)日：2023-06-07

申请号：EP22207266.2

申请日：2022-11-14

Applicant: STMicroelectronics S.r.l.

Inventor： PUGLISI, Valeria ,  BELLOCCHI, Gabriele ,  RASCUNA', Simone

IPC: H01L23/31 ,  H01L21/56 ,  H01L29/16

Abstract: An electronic device (50; 100), comprising: a semiconductor body (53) of silicon carbide; an insulating layer (61; 102) on a surface (53a) of the semiconductor body (53); a layer of metal material (58) extending in part on the surface (53a) of the semiconductor body (53) and in part on the insulating layer (61); a SiN interface layer on the layer of metal material and the insulating layer; a passivation layer (69) on the interface layer; and an anchoring element (82) that protrudes from the passivation layer (69) towards the first insulating layer (61; 102) and extends in the first insulating layer (61; 102) underneath the interface layer.

公开(公告)号：EP3965149A1

公开(公告)日：2022-03-09

申请号：EP21194172.9

申请日：2021-08-31

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  SAGGIO, Mario Giuseppe

IPC: H01L23/31 ,  H01L29/872

Abstract: A manufacturing method of an anchorage element (82) of a passivation layer (69), comprising: forming, in a semiconductor body (80) made of SiC and at a distance from a top surface (52a) of the semiconductor body (80), a first implanted region (84) having, along a first axis (X), a first maximum dimension (di); forming, in the semiconductor body (80), a second implanted region (85), which is superimposed to the first implanted region (84) and has, along the first axis (X), a second maximum dimension (d 2 ) smaller than the first maximum dimension (di); carrying out a process of thermal oxidation of the first implanted region (84) and second implanted region (85) to form an oxidized region (86'); removing said oxidized region (86') to form a cavity (83); and forming, on the top surface (52a), the passivation layer (69) protruding into the cavity (83) to form said anchorage element (82) fixing the passivation layer (69) to the semiconductor body (80).

公开(公告)号：EP3896720A1

公开(公告)日：2021-10-20

申请号：EP21167886.7

申请日：2021-04-12

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  SAGGIO, Mario Giuseppe ,  FRANCO, Giovanni

IPC: H01L21/28 ,  H01L29/45 ,  H01L21/268 ,  H01L21/265 ,  H01L21/329 ,  H01L21/336 ,  H01L29/872 ,  H01L29/78 ,  H01L29/16

Abstract: A method for manufacturing a SiC-based electronic device (50; 90), comprising the steps of: implanting, on a front side (52a; 22a) of a solid body (52; 22) made of SiC having a conductivity of an N type, dopant species of a P type thus forming an implanted region (59'; 34), which extends in the solid body starting from the front side (52a; 22a) and has a top surface coplanar with said front side (52a; 22a); and generating a laser beam (82; 96) directed towards the implanted region (59'; 34) in order to generate heating of the implanted region (59'; 34) to temperatures comprised between 1500°C and 2600°C so as to form a carbon-rich electrical-contact region (59"; 91) at said implanted region (59'; 34). The carbon-rich electrical-contact region (59"; 91) forms an ohmic contact.

公开(公告)号：EP3876263A1

公开(公告)日：2021-09-08

申请号：EP21161040.7

申请日：2021-03-05

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BADALA', Paolo ,  BASSI, Anna ,  SAGGIO, Mario Giuseppe ,  FRANCO, Giovanni

IPC: H01L21/04 ,  H01L29/66

Abstract: Method for manufacturing an electronic device (50) based on SiC, comprising the steps of: arranging a substrate (53) of SiC; forming a structural layer (52) of SiC on a front of the substrate; forming, in the structural layer (52), active regions of said electronic device (50), said active regions having a role in the generation and/or conduction of electric current during the use of the electronic device (50); forming, on the structural layer (52), a first electric terminal (58); forming an intermediate layer (72) of Titanium at the back of the substrate; heating the intermediate layer (72) by means of a LASER beam (82) in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds; and forming, on the intermediate layer, a second electric terminal (57) of the electronic device.

公开(公告)号：EP3706274A1

公开(公告)日：2020-09-09

申请号：EP20158399.4

申请日：2020-02-20

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics (Tours) SAS

Inventor： SIMONNET, Jean-Michel ,  NGO, Sophie ,  RASCUNA', Simone

IPC: H02H9/04

Abstract: La présente description concerne un circuit (110) comprenant une première diode (130) en un matériau semiconducteur présentant une largeur de bande interdite supérieure à celle du silicium, de sorte à assurer une protection contre des surtensions.