公开(公告)号：EP3896719A1

公开(公告)日：2021-10-20

申请号：EP21167866.9

申请日：2021-04-12

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BADALA', Paolo ,  BASSI, Anna ,  BELLOCCHI, Gabriele

IPC: H01L21/28 ,  H01L29/45 ,  H01L21/268 ,  H01L21/265 ,  H01L21/329 ,  H01L29/872 ,  H01L29/16

Abstract: A method for manufacturing a SiC-based electronic device (50), comprising the steps of: implanting, at a front side (52a) of a solid body (52) of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region (59') that extends in depth in the solid body starting from the front side (52a) and has a top surface co-planar with said front side (52a); and generating a laser beam (82) directed towards the implanted region (59') in order to generate heating of the implanted region (59') at temperatures comprised between 1500°C and 2600°C so as to form an ohmic contact region (59") including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region (59') and, simultaneously, activation of the dopant species of P type.

公开(公告)号：EP4333027A1

公开(公告)日：2024-03-06

申请号：EP23190768.4

申请日：2023-08-10

Applicant: STMicroelectronics S.r.l.

Inventor： SAGGIO, Mario Giuseppe ,  CAMALLERI, Cateno Marco ,  BELLOCCHI, Gabriele ,  RASCUNA', Simone

IPC: H01L21/336 ,  H01L29/45 ,  H01L29/78 ,  H01L29/12

Abstract: Method of manufacturing an electronic device (20), comprising forming an ohmic contact (59; 61) at an implanted region (26; 55) of a semiconductor body (48). Forming the ohmic contact provides for performing a high-temperature thermal process for allowing a reaction between a metal material and the material of the semiconductor body, for forming a silicide of the metal material. The step of forming the ohmic contact is performed prior to a step of forming one or more electrical structures (52, 56) which include materials that may be damaged by the high temperature of the thermal process of forming the silicide.

公开(公告)号：EP4187621A1

公开(公告)日：2023-05-31

申请号：EP22206027.9

申请日：2022-11-08

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  PUGLISI, Valeria ,  BELLOCCHI, Gabriele

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/16 ,  H01L21/329 ,  H01L29/40 ,  H01L23/31

Abstract: An electronic device (50; 100) comprising: a semiconductor body (53) of silicon carbide; a first insulating layer (61) on a first surface (53a) of the semiconductor body (53), of a first material with electrical-insulator or dielectric characteristics; a first layer of metal material (58) extending in part on the first surface (53a) of the semiconductor body (53) and in part on the first insulating layer (61); an interface layer (63) on the first layer of metal material (58) and on the first insulating layer (61), of a second material different from the first material; and a passivation layer (69) of said first material on the interface layer (63). The first material is silicon oxide, and the second material is silicon nitride.

公开(公告)号：EP4322229A3

公开(公告)日：2024-05-22

申请号：EP23220528.6

申请日：2021-06-22

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BELLOCCHI, Gabriele ,  BADALA', Paolo ,  CRUPI, Isodiana

IPC: H01L31/0224 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L21/0485 ,  H01L31/1864 ,  H01L31/105 ,  H01L31/022408 ,  Y02P70/50

Abstract: A device (50) for detecting UV radiation, comprising: a SiC substrate (53) having an N doping; a SiC drift layer (52) having an N doping, which extends over the substrate (53); a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region (59) having a P doping, which extends in the drift layer (52); and an ohmic-contact region (60) including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region (59). The ohmic-contact region (60) is transparent to the UV radiation to be detected.

公开(公告)号：EP4191663A1

公开(公告)日：2023-06-07

申请号：EP22207266.2

申请日：2022-11-14

Applicant: STMicroelectronics S.r.l.

Inventor： PUGLISI, Valeria ,  BELLOCCHI, Gabriele ,  RASCUNA', Simone

IPC: H01L23/31 ,  H01L21/56 ,  H01L29/16

Abstract: An electronic device (50; 100), comprising: a semiconductor body (53) of silicon carbide; an insulating layer (61; 102) on a surface (53a) of the semiconductor body (53); a layer of metal material (58) extending in part on the surface (53a) of the semiconductor body (53) and in part on the insulating layer (61); a SiN interface layer on the layer of metal material and the insulating layer; a passivation layer (69) on the interface layer; and an anchoring element (82) that protrudes from the passivation layer (69) towards the first insulating layer (61; 102) and extends in the first insulating layer (61; 102) underneath the interface layer.

公开(公告)号：EP4246554A1

公开(公告)日：2023-09-20

申请号：EP23161718.4

申请日：2023-03-14

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  ROCCAFORTE, Fabrizio ,  BELLOCCHI, Gabriele ,  VIVONA, Marilena

IPC: H01L21/20 ,  H01L29/04 ,  H01L29/872 ,  H01L21/02 ,  H01L29/06 ,  H01L29/16

Abstract: Method for manufacturing an electronic device (50; 80), comprising the steps of: forming, at a front side (2a) of a solid body (3, 2) of 4H-SiC having a first electrical conductivity (N), at least one implanted region (9') having a second electrical conductivity (P) opposite to the first electrical conductivity (N); forming, on the front side (2a), a 3C-SiC layer (52); and forming, in the 3C-SiC layer (52), an ohmic contact region (54; 84) which extends through the entire thickness of the 3C-SiC layer (52), up to reaching the implanted region (9'). A Silicon layer (56) may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the Silicon layer.

公开(公告)号：EP4322229A2

公开(公告)日：2024-02-14

申请号：EP23220528.6

申请日：2021-06-22

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BELLOCCHI, Gabriele ,  BADALA', Paolo ,  CRUPI, Isodiana

IPC: H01L31/105

Abstract: A device (50) for detecting UV radiation, comprising: a SiC substrate (53) having an N doping; a SiC drift layer (52) having an N doping, which extends over the substrate (53); a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region (59) having a P doping, which extends in the drift layer (52); and an ohmic-contact region (60) including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region (59). The ohmic-contact region (60) is transparent to the UV radiation to be detected.

公开(公告)号：EP4246553A1

公开(公告)日：2023-09-20

申请号：EP23160409.1

申请日：2023-03-07

Applicant: STMicroelectronics S.r.l.

Inventor： BELLOCCHI, Gabriele ,  RASCUNA', Simone ,  BADALA', Paolo ,  BASSI, Anna

IPC: H01L21/20

Abstract: Process for manufacturing a 3C-SiC layer (4; 24), comprising the steps of: providing a wafer (1; 21) of 4H-SiC, provided with a surface (1a; 21a); heating, through a LASER beam (102), a selective portion of the wafer (1; 21) at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C-SiC layer (4; 24), a Silicon layer (6a; 26a) on the 3C-SiC layer and a carbon-rich layer (6b; 26b) above the Silicon layer (6a; 26a); completely removing the carbon-rich layer (6; 26) and the Silicon layer (6a; 26a), exposing the 3C-SiC layer (4; 24). If the Silicon layer (6a; 26a) is maintained on the 4H-SiC wafer, the process leads to the formation of a Silicon layer on the 4H-SiC wafer.
The 3C-SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.

公开(公告)号：EP4040507A1

公开(公告)日：2022-08-10

申请号：EP22152484.6

申请日：2022-01-20

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BELLOCCHI, Gabriele ,  SANTORO, Marco

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/16 ,  H01L21/329

Abstract: Junction Barrier Schottky device (50) comprising: a semiconductor body (68) of SiC with a first conductivity; an implanted region (59') with a second conductivity, extending into the semiconductor body (68) at a top surface (52a) of the semiconductor body (68), to form a junction barrier, JB, diode (59) with the semiconductor body (68); and an electrical terminal (58) in ohmic contact with the implanted region (59') and in direct electrical contact with the top surface (52a), laterally to the implanted region (59'), to form a Schottky diode (62) with the semiconductor body (68). The implanted region (59') is formed by a first (63') and a second portion (63") electrically connected directly to each other and aligned along an alignment axis (55) transverse to the top surface (52a). Orthogonally to the alignment axis (55), the first portion (63') has a first maximum width (d 1 ) and the second portion (63") has a second maximum width (d 2 ) greater than the first maximum width (d 1 ).

公开(公告)号：EP4040498A1

公开(公告)日：2022-08-10

申请号：EP22154844.9

申请日：2022-02-02

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BELLOCCHI, Gabriele ,  ZANETTI, Edoardo ,  SAGGIO, Mario Giuseppe

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/36 ,  H01L29/66 ,  H01L29/872

Abstract: The vertical conduction electronic device (50) is formed by a body (55) of wide-bandgap semiconductor material having a first conductivity type and a surface (55A), which defines a first direction (Y) and a second direction (X), wherein the body has a drift region (59, 59A, 59B). The electronic device is further formed by a plurality of superficial implanted regions (62) having a second conductivity type, which extend in the drift region from the surface and delimit between them, in the drift region, at least one superficial portion (68) facing the surface; by at least one deep implanted region (65) having the second conductivity type, which extends in the drift region, at a distance from the surface of the body; and by a metal region (80), which extends on the surface of the body, in Schottky contact with the superficial portion (68) of the drift region.