Patent search ap:("STMicroelectronics S.r.l.") AND inv:"Golla Page Carla Maria"

11.

发明授权
Biasing circuit for UPROM cells with low voltage supply 失效
Title translation: 偏置电路，用于UPROM细胞与低电源电压

公开(公告)号：EP0805456B1

公开(公告)日：2004-02-11

申请号：EP96830242.2

申请日：1996-04-30

Applicant: STMicroelectronics S.r.l.

Inventor： Maccarrone, Marco , Mulatti, Jacopo , Golla, Carla Maria

IPC: G11C11/00 , G11C16/06

CPC classification number: G11C16/30

12.

发明授权
Load signal generating method and circuit for non-volatile memories 失效
Title translation: 方法和电路用于生成用于非易失性存储器的充电信号

公开(公告)号：EP0678873B1

公开(公告)日：2000-06-07

申请号：EP94830071.0

申请日：1994-02-18

Applicant: STMicroelectronics S.r.l.

Inventor： Pascucci, Luigi , Golla, Carla Maria

IPC: G11C16/06 , G11C7/00

CPC classification number: G11C5/143 , G11C7/22 , G11C16/32

13.

发明授权
Memory array cell reading device 失效
Title translation: 用于读取的存储器单元阵列的布置

公开(公告)号：EP0678871B1

公开(公告)日：2000-05-31

申请号：EP94830124.7

申请日：1994-03-22

Applicant: STMicroelectronics S.r.l.

Inventor： Golla, Carla Maria , Olivo, Marco , Padoan, Silvia

IPC: G11C7/00 , G11C16/06

CPC classification number: G11C7/14 , G11C16/28

14.

发明授权
Double-row address decoding and selection circuitry for an electrically erasable and programmable non-volatile memory device with redundancy, particularly for flash EEPROM devices 失效
Title translation: 用于与冗余电可擦除和可编程的非易失性存储器设备，特别是用于快闪EEPROM器件双列Adressendekodierung-和选择电路

公开(公告)号：EP0658903B1

公开(公告)日：1999-04-28

申请号：EP93830504.2

申请日：1993-12-15

Applicant: STMicroelectronics S.r.l.

Inventor： Golla, Carla Maria , Olivo, Marco

IPC: G11C8/00 , G11C16/06 , G06F11/20

CPC classification number: G11C29/76 , G11C8/12 , G11C16/08 , G11C29/82

15.

发明授权
Current source 失效
Title translation: 当前来源

公开(公告)号：EP0665485B1

公开(公告)日：1998-10-07

申请号：EP94830022.3

申请日：1994-01-21

Applicant: STMicroelectronics S.r.l.

Inventor： Maccarrone, Marco , Olivo, Marco , Golla, Carla Maria

IPC: G05F3/26

CPC classification number: G05F3/262

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