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    Unbalanced latch and fuse circuit including the same
    8.
    发明授权
    Unbalanced latch and fuse circuit including the same 失效
    不平衡锁存电路和含有它们Schmelgsicherungsschatung

    公开(公告)号：EP0756379B1

    公开(公告)日：2003-09-24

    申请号：EP95830337.2

    申请日：1995-07-28

    Applicant: STMicroelectronics S.r.l.

    Inventor： Pascucci, Luigi ,  Rolandi, Paolo ,  Barcella, Antonio ,  Fontana, Marco

    IPC: H03K3/356 ,  G11C16/06

    CPC classification number: G11C7/20 ,  H03K3/356008 ,  H03K3/356104

    Abstract: A latch circuit (1) that is intentionally imbalanced, so that a first output (6) reaches ground voltage and a second output (7) reaches a supply voltage; and a fully static low-consumption fuse circuit the particularity whereof resides in that it comprises the intentionally unbalanced latch circuit (1) and a reversing branch that comprises the fuse to be programmed (6) and is adapted to reverse the operation of the latch circuit, so that in the virgin state the fuse (9) connects the second output (7) of the latch circuit (1) to the ground voltage and connects the first output (6) to the supply voltage.

    Electrically programmable non-volatile memory cell
    9.
    发明公开
    Electrically programmable non-volatile memory cell 有权
    Elektrisch programmierbarenichtflüchtigeSpeicherzelle

    公开(公告)号：EP1339068A1

    公开(公告)日：2003-08-27

    申请号：EP02425085.4

    申请日：2002-02-20

    Applicant: STMicroelectronics S.r.l.

    Inventor： Pascucci, Luigi

    IPC: G11C11/56 ,  G11C16/04

    CPC classification number: H01L29/7923 ,  G11C11/5671 ,  G11C16/0458 ,  G11C16/0475 ,  H01L21/28282

    Abstract: An electrically-programmable memory cell programmed by means of injection of channel hot electrons into a charge-storage element ( 115a , 115b ; 323 ) capacitively coupled to a memory cell channel ( 107 ; 307 ) for modulating a conductivity thereof depending on a stored amount of charge. A first and a second spaced-apart electrode regions ( 109a , 109b ; 309a , 309b ) are formed in a semiconductor layer ( 103 ; 303 ) and define a channel region ( 107 ; 307 ) there between; at least one ( 109A , 109B ; 309B ) of the first and second electrode regions acts as a programming electrode of the memory cell. A control electrode ( CG ) is capacitively coupled to the charge-storage element. The charge-storage element is placed over the channel to substantially extend from the first to the second electrode regions, and is separated from the channel region by a dielectric layer ( 1012 , 113 ; 321 ). The dielectric layer has a reduced thickness in a portion ( 113 ; 321b ) thereof near the at least one programming electrode.

    Abstract translation: 通过将通道热电子注入到电容耦合到存储器单元通道（107; 307）的电荷存储元件（115a，115b; 323）中编程的电可编程存储器单元，用于根据存储量调制其电导率 的费用。 第一和第二间隔开的电极区域（109a，109b; 309a，309b）形成在半导体层（103; 303）中，并且在其间限定了沟道区域（107; 307） 第一和第二电极区域的至少一个（109A，109B; 309B）用作存储单元的编程电极。 控制电极（CG）电容耦合到电荷存储元件。 电荷存储元件放置在通道上，以基本上从第一电极区域延伸到第二电极区域，并且通过电介质层（1012,113; 321）与沟道区域分离。 电介质层在其至少一个编程电极附近的部分（113; 321b）中具有减小的厚度。

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