公开(公告)号：EP3109657A1

公开(公告)日：2016-12-28

申请号：EP15200291.1

申请日：2015-12-15

Applicant: STMicroelectronics S.r.l.

Inventor： PACI, Dario ,  MARCHESI, Marco ,  MORELLI, Marco

IPC: G01R33/00 ,  G01R33/025 ,  G01R33/09

CPC classification number: G01R33/096 ,  G01R33/0011 ,  G01R33/025 ,  G01R33/07 ,  G01R33/09

Abstract: An integrated AMR magnetoresistive sensor (20) having a magnetoresistor (21), a set/reset coil (22), and a shielding region (23) arranged on top of each other, with the set/reset coil (22) arranged between the magnetoresistor and the shielding region. The magnetoresistor (21) is formed by a magnetoresistive strip (24) of an elongated shape having a length in a first direction (X) parallel to the preferential magnetization direction (EA) and a width in a second direction (Y) perpendicular to the first direction. The set/reset coil (22) has at least one stretch (34a, 34b) extending transversely to the magnetoresistive strip. The shielding region (23) is a ferromagnetic material and has a width in the second direction (Y) greater than the width of the magnetoresistive strip (24) so as to attenuate the external magnetic field (H) traversing the magnetoresistive strip (24) and increasing the sensitivity scale of the magnetoresistive sensor.

Abstract translation: 一种集成的AMR磁阻传感器（20），其具有设置/复位线圈（22）设置在彼此顶部的磁阻（21），设定/复位线圈（22）和屏蔽区域（23） 磁敏电阻和屏蔽区域。 磁阻电阻器（21）由具有与优先磁化方向（EA）平行的第一方向（X）的长度的细长形状的磁阻条（24）形成，并且垂直于第二方向（Y）的宽度 第一个方向 设置/复位线圈（22）具有横向于磁阻带延伸的至少一个延伸部（34a，34b）。 屏蔽区域（23）是铁磁材料，并且具有大于磁阻条（24）的宽度的第二方向（Y）的宽度，以便衰减穿过磁阻条带（24）的外部磁场（H） 并增加磁阻传感器的灵敏度。

公开(公告)号：EP2656090A1

公开(公告)日：2013-10-30

申请号：EP11805049.1

申请日：2011-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： PACI, Dario ,  MORELLI, Marco ,  RIVA, Caterina

IPC: G01R33/00 ,  G01R33/09

CPC classification number: G01R33/0011 ,  B82Y25/00 ,  G01R33/093 ,  H01L43/12

Abstract: An integrated magnetoresistive device, where a substrate (17) of semiconductor material is covered, on a first surface (19), by an insulating layer (18). A magnetoresistor (26) of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator (34) of ferromagnetic material including at least one arm (34a), extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor (26). In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

公开(公告)号：EP1907811B1

公开(公告)日：2012-04-25

申请号：EP05778689.9

申请日：2005-07-22

Applicant: STMicroelectronics S.r.l.

Inventor： RICOTTI, Giulio ,  MORELLI, Marco ,  DELLA TORRE, Luigi ,  VITALI, Andrea, Lorenzo ,  MASTROMATTEO, Ubaldo

IPC: G01L9/00 ,  G01L19/06

CPC classification number: G01L9/0054 ,  G01L9/0045 ,  G01L15/00

Abstract: In a pressure sensor (15) with double measuring scale: a monolithic body (16) of semiconductor material has a first main surface (16a), a bulk region (17) and a sensitive portion (33) upon which pressure (P) acts; a cavity (18) is formed in the monolithic body (16) and is separated from the first main surface (16a) by a membrane (19), which is flexible and deformable as a function of the pressure (P), and is arranged inside the sensitive portion (33) and is surrounded by the bulk region (17); a low-pressure detecting element (28) of the piezoresistive type, sensitive to first values of pressure (P), is integrated in the membrane (19) and has a variable resistance as a function of the deformation of the membrane (19); in addition, a high-pressure detecting element (29), also of a piezoresistive type, is formed in the bulk region (17) inside the sensitive portion (33) and has a variable resistance as a function of the pressure (P). The high­pressure detecting element (29) is sensitive to second values of pressure (P).

公开(公告)号：EP1907808A1

公开(公告)日：2008-04-09

申请号：EP05778683.2

申请日：2005-07-22

Applicant: STMicroelectronics S.r.l.

Inventor： RICOTTI, Giulio ,  MORELLI, Marco ,  DELLA TORRE, Luigi ,  VITALI, Andrea, Lorenzo

IPC: G01L1/18 ,  G01L9/00 ,  G01L9/06

CPC classification number: G01L1/18 ,  B60T2270/82

Abstract: In an integrated pressure sensor (15) with a high full-scale value, a monolithic body (16) of semiconductor material has a first and a second main surface (16a and 16b), opposite and separated by a substantially uniform distance (w). The monolithic body (16) has a bulk region (17), having a sensitive portion (23) next to the first main surface (16a), upon which pressure (P) acts. A first piezoresistive detection element (18) is integrated in the sensitive portion (23) and has a variable resistance as a function of the pressure (P). The bulk region (17) is a solid and compact region and has a thickness substantially equal to the distance (w).