中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.04 seconds)

    CAPACITIVE POSITION SENSING IN AN ELECTROSTATIC MICROMOTOR
    1.
    发明申请
    CAPACITIVE POSITION SENSING IN AN ELECTROSTATIC MICROMOTOR 审中-公开
    静电放大器中的电容位置感测

    公开(公告)号：WO2008120256A1

    公开(公告)日：2008-10-09

    申请号：PCT/IT2007/000252

    申请日：2007-04-03

    Applicant: STMICROELECTRONICS S.R.L. ,  MURARI, Bruno ,  MASTROMATTEO, Ubaldo ,  RICOTTI, Giulio

    Inventor： MURARI, Bruno ,  MASTROMATTEO, Ubaldo ,  RICOTTI, Giulio

    IPC: H02N1/00

    CPC classification number: H02N1/006

    Abstract: An electrostatic micromotor (10') is provided with a fixed substrate (12), a mobile substrate (13) facing the fixed substrate (12), and electrostatic-interaction elements (14, 15, 17) enabling a relative movement of the mobile substrate (3) with respect to the fixed substrate (2) in a movement direction (x); the electrostatic micromotor is also provided with a capacitive position-sensing structure (18') configured to enable sensing of a relative position of the mobile substrate (13) with respect to the fixed substrate (12) in the movement direction (x). The capacitive position-sensing structure (18') is formed by at least one sensing indentation (22), extending within the mobile substrate (13) from a first surface (13a; 13b) thereof, and by at least one first sensing electrode (24), facing, in at least one given operating condition, the sensing indentation (22).

    Abstract translation: 静电微电机（10'）设置有固定基板（12），面向固定基板（12）的移动基板（13）和静电相互作用元件（14,15,17），其能够使移动体 基板（3）相对于固定基板（2）在移动方向（x）上移动; 静电微型电动机还设置有电容位置感测结构（18'），其被配置为能够在移动方向（x）上感测移动衬底（13）相对于固定衬底（12）的相对位置。 电容式位置感测结构（18'）由至少一个感测压痕（22）形成，其从移动衬底（13）的第一表面（13a; 13b）延伸，并由至少一个第一感测电极 在至少一个给定的操作条件下面对感测缩进（22）。

    INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE AND A HIGH FULL-SCALE VALUE
    2.
    发明申请
    INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE AND A HIGH FULL-SCALE VALUE 审中-公开
    具有双重测量尺寸和高全尺寸值的集成压力传感器

    公开(公告)号：WO2007010570A1

    公开(公告)日：2007-01-25

    申请号：PCT/IT2005/000431

    申请日：2005-07-22

    Applicant: STMICROELECTRONICS S.R.L. ,  RICOTTI, Giulio ,  MORELLI, Marco ,  DELLA TORRE, Luigi ,  VITALI, Andrea, Lorenzo ,  MASTROMATTEO, Ubaldo

    Inventor： RICOTTI, Giulio ,  MORELLI, Marco ,  DELLA TORRE, Luigi ,  VITALI, Andrea, Lorenzo ,  MASTROMATTEO, Ubaldo

    IPC: G01L9/06 ,  G01L19/06

    CPC classification number: G01L9/0054 ,  G01L9/0045 ,  G01L15/00

    Abstract: In a pressure sensor (15) with double measuring scale: a monolithic body (16) of semiconductor material has a first main surface (16a), a bulk region (17) and a sensitive portion (33) upon which pressure (P) acts; a cavity (18) is formed in the monolithic body (16) and is separated from the first main surface (16a) by a membrane (19), which is flexible and deformable as a function of the pressure (P), and is arranged inside the sensitive portion (33) and is surrounded by the bulk region (17); a low-pressure detecting element (28) of the piezoresistive type, sensitive to first values of pressure (P), is integrated in the membrane (19) and has a variable resistance as a function of the deformation of the membrane (19); in addition, a high-pressure detecting element (29), also of a piezoresistive type, is formed in the bulk region (17) inside the sensitive portion (33) and has a variable resistance as a function of the pressure (P). The high­pressure detecting element (29) is sensitive to second values of pressure (P).

    Abstract translation: 在具有双重测量标尺的压力传感器（15）中：半导体材料的整体（16）具有第一主表面（16a），主体区域（17）和压力（P）作用于其上的敏感部分 ; 在整体式主体（16）中形成空腔（18），并且通过膜（19）与第一主表面（16a）分离，该膜（19）作为压力（P）的函数是柔性和可变形的，并且布置 在所述敏感部分（33）的内部并且被所述主体区域（17）包围; 对第一压力值（P）敏感的压阻型低压检测元件（28）集成在膜（19）中，并具有作为膜（19）的变形的函数的可变电阻; 此外，在敏感部分（33）内的主体区域（17）中形成压阻型高压检测元件（29），并具有作为压力（P）的函数的可变电阻。 高压检测元件（29）对第二压力值（P）敏感。

    INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE AND A HIGH FULL-SCALE VALUE
    3.
    发明授权
    INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE AND A HIGH FULL-SCALE VALUE 有权
    带双量表和高价值FULL决定性集成压力传感器

    公开(公告)号：EP1907811B1

    公开(公告)日：2012-04-25

    申请号：EP05778689.9

    申请日：2005-07-22

    Applicant: STMicroelectronics S.r.l.

    Inventor： RICOTTI, Giulio ,  MORELLI, Marco ,  DELLA TORRE, Luigi ,  VITALI, Andrea, Lorenzo ,  MASTROMATTEO, Ubaldo

    IPC: G01L9/00 ,  G01L19/06

    CPC classification number: G01L9/0054 ,  G01L9/0045 ,  G01L15/00

    Abstract: In a pressure sensor (15) with double measuring scale: a monolithic body (16) of semiconductor material has a first main surface (16a), a bulk region (17) and a sensitive portion (33) upon which pressure (P) acts; a cavity (18) is formed in the monolithic body (16) and is separated from the first main surface (16a) by a membrane (19), which is flexible and deformable as a function of the pressure (P), and is arranged inside the sensitive portion (33) and is surrounded by the bulk region (17); a low-pressure detecting element (28) of the piezoresistive type, sensitive to first values of pressure (P), is integrated in the membrane (19) and has a variable resistance as a function of the deformation of the membrane (19); in addition, a high-pressure detecting element (29), also of a piezoresistive type, is formed in the bulk region (17) inside the sensitive portion (33) and has a variable resistance as a function of the pressure (P). The high­pressure detecting element (29) is sensitive to second values of pressure (P).

    METHOD AND APPARATUS FOR THE GENERATION OF THERMAL ENERGY
    4.
    发明公开
    METHOD AND APPARATUS FOR THE GENERATION OF THERMAL ENERGY 失效
    方法和设备用来产生热能

    公开(公告)号：EP0873562A1

    公开(公告)日：1998-10-28

    申请号：EP96940125.0

    申请日：1996-11-26

    Applicant: STMicroelectronics S.r.l.

    Inventor： MASTROMATTEO, Ubaldo

    IPC: G21B3 ,  G21D9

    CPC classification number: G21B3/00 ,  G21B3/002 ,  Y02E30/18

    Abstract: The apparatus for the generation of thermal energy according to this invention comprises: a) a first quantity (MA) in solid form of a first material suitable to absorb hydrogen with ensuing generation of thermal energy, b) a second quantity (CO) in solid form of a second material suitable to release hydrogen at a temperature higher than a prefixed temperature, at least partly in contact with said first quantity (MA), and c) a third quantity (ET) in solid form of a third material, suitable for the generation of thermal energy when it is submitted to the passage of electric current, so located as to be thermally coupled with said second quantity (CO).

    INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE AND A HIGH FULL-SCALE VALUE
    5.
    发明公开
    INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE AND A HIGH FULL-SCALE VALUE 有权
    带双量表和高价值FULL决定性集成压力传感器

    公开(公告)号：EP1907811A1

    公开(公告)日：2008-04-09

    申请号：EP05778689.9

    申请日：2005-07-22

    Applicant: STMicroelectronics S.r.l.

    Inventor： RICOTTI, Giulio ,  MORELLI, Marco ,  DELLA TORRE, Luigi ,  VITALI, Andrea, Lorenzo ,  MASTROMATTEO, Ubaldo

    IPC: G01L9/06 ,  G01L19/06

    CPC classification number: G01L9/0054 ,  G01L9/0045 ,  G01L15/00

    Abstract: In a pressure sensor (15) with double measuring scale: a monolithic body (16) of semiconductor material has a first main surface (16a), a bulk region (17) and a sensitive portion (33) upon which pressure (P) acts; a cavity (18) is formed in the monolithic body (16) and is separated from the first main surface (16a) by a membrane (19), which is flexible and deformable as a function of the pressure (P), and is arranged inside the sensitive portion (33) and is surrounded by the bulk region (17); a low-pressure detecting element (28) of the piezoresistive type, sensitive to first values of pressure (P), is integrated in the membrane (19) and has a variable resistance as a function of the deformation of the membrane (19); in addition, a high-pressure detecting element (29), also of a piezoresistive type, is formed in the bulk region (17) inside the sensitive portion (33) and has a variable resistance as a function of the pressure (P). The high­pressure detecting element (29) is sensitive to second values of pressure (P).

    CAPACITIVE POSITION SENSING IN AN ELECTROSTATIC MICROMOTOR
    7.
    发明公开
    CAPACITIVE POSITION SENSING IN AN ELECTROSTATIC MICROMOTOR 审中-公开
    电容SYSTEM FOR位置GIVE静电微电机

    公开(公告)号：EP2132868A1

    公开(公告)日：2009-12-16

    申请号：EP07736756.3

    申请日：2007-04-03

    Applicant: STMicroelectronics S.r.l.

    Inventor： MURARI, Bruno ,  MASTROMATTEO, Ubaldo ,  RICOTTI, Giulio

    IPC: H02N1/00

    CPC classification number: H02N1/006

    Abstract: An electrostatic micromotor (10') is provided with a fixed substrate (12), a mobile substrate (13) facing the fixed substrate (12), and electrostatic-interaction elements (14, 15, 17) enabling a relative movement of the mobile substrate (3) with respect to the fixed substrate (2) in a movement direction (x); the electrostatic micromotor is also provided with a capacitive position-sensing structure (18') configured to enable sensing of a relative position of the mobile substrate (13) with respect to the fixed substrate (12) in the movement direction (x). The capacitive position-sensing structure (18') is formed by at least one sensing indentation (22), extending within the mobile substrate (13) from a first surface (13a; 13b) thereof, and by at least one first sensing electrode (24), facing, in at least one given operating condition, the sensing indentation (22).

    A METHOD AND APPARATUS FOR GENERATING THERMAL ENERGY
    8.
    发明公开
    A METHOD AND APPARATUS FOR GENERATING THERMAL ENERGY 审中-公开
    方法和设备用来产生热能

    公开(公告)号：EP1222665A1

    公开(公告)日：2002-07-17

    申请号：EP00966114.1

    申请日：2000-10-05

    Applicant: STMicroelectronics S.r.l.

    Inventor： MASTROMATTEO, Ubaldo

    IPC: G21B1/00

    CPC classification number: G21B3/002

    Abstract: The invention relates to a method and an apparatus for generating thermal energy from a cold nuclear fusion reaction by having at least a first hydrogen-absorbing material (3) placed either under a high hydrogen content atmosphere or in contact with a hydrogen-releasing material. The method comprises an initial step of heating to a predetermined reaction-initiating temperature, and a second or concurrent step of applying a predetermined sequence of current pulses to the first material. By adjustment of the pulse strength or frequency, the excess thermal energy produced by the reaction can be adjusted.

    MONOLITHICALLY INTEGRATED DEVICE
    9.
    发明公开
    MONOLITHICALLY INTEGRATED DEVICE 失效
    单片集成器件

    公开(公告)号：EP0864159A1

    公开(公告)日：1998-09-16

    申请号：EP96940127.0

    申请日：1996-11-26

    Applicant: STMicroelectronics S.r.l.

    Inventor： MASTROMATTEO, Ubaldo

    IPC: G21B3 ,  G21D9 ,  H01L35

    CPC classification number: G21B3/00 ,  G21B3/002 ,  Y02E30/18

    Abstract: The monolithically integrated device according to this invention comprises a first substrate (SUB) and, at least in a portion: a) a first structure (ST1) of a first material in solid form suitable to absorb hydrogen with ensuing generation of thermal energy, superposed to said substrate (SUB); b) a second structure (ST2) of a second material in solid form suitable to release hydrogen when it reaches a temperature higher than a prefixed temperature, superposed to said substrate (SUB); c) a third structure (ST3) of a third material in solid form suitable to generate thermal energy when it is submitted to the passage of electric current, so placed as to be thermally coupled at least to said second structure (ST2); wherein said first structure (ST1) and said second structure (ST2) are in contact, at least partly, with one another.

Patent Agency Ranking